The category is 'Transistors - FETs, MOSFETs - Arrays'
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- FET Feature
- FET Type
- Input Capacitance (Ciss) (Max) @ Vds
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- Part Status
- Rds On (Max) @ Id, Vgs
- RoHS Status
- Vgs(th) (Max) @ Id
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Max Junction Temperature (Tj) | FET Feature | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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 | Mfr Part No FDS9953A | ON Semiconductor | Datasheet | 2400 | - | Min: 1 Mult: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 2.9A | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 130MOhm | Tin (Sn) | -30V | 2W | GULL WING | -2.9A | Dual | ENHANCEMENT MODE | 2W | 4.5 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 130m Ω @ 1A, 10V | 3V @ 250μA | 185pF @ 15V | 3.5nC @ 10V | 13ns | 30V | 2 ns | 2.9mA | -1.8V | 25V | -30V | 10A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 1.8 V | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||
 | Mfr Part No IPG16N10S461ATMA1 | Infineon Technologies | Datasheet | 11 | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | Surface Mount | 8-PowerVDFN | 8 | SILICON | 2 | 5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 29W | FLAT | not_compliant | 8 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 3 ns | 29W | 2 N-Channel (Dual) | 61m Ω @ 16A, 10V | 3.5V @ 9μA | Halogen Free | 490pF @ 25V | 7nC @ 10V | 1ns | 16A | 20V | 100V | 0.061Ohm | 64A | 33 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 20 pF | ROHS3 Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||
 | Mfr Part No NTJD4105CT2G | ON Semiconductor | Datasheet | 70294 | - | Min: 1 Mult: 1 | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 630mA 775mA | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 220mOhm | Tin (Sn) | 270mW | GULL WING | 260 | 630mA | 40 | NTJD4105C | 6 | Dual | ENHANCEMENT MODE | 270mW | N and P-Channel | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 23ns | 20V 8V | N-CHANNEL AND P-CHANNEL | 36 ns | 775mA | 8V | 1.1A | -8V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 5 pF | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||
 | Mfr Part No NVMFD5C462NLT1G | ON Semiconductor | Datasheet | 14400 | - | Min: 1 Mult: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | 8-PowerTDFN | YES | SILICON | 18A Ta 84A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | not_compliant | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 3W Ta 50W Tc | 2 N-Channel (Dual) | 4.7m Ω @ 10A, 10V | 2.2V @ 40μA | 1300pF @ 25V | 11nC @ 4.5V | 40V | 0.0077Ohm | 311A | 40V | 174 mJ | METAL-OXIDE SEMICONDUCTOR | 50W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BSO211PHXUMA1 | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | LOGIC LEVEL COMPATIBLE | 1.6W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSO211 | 8 | Not Qualified | ENHANCEMENT MODE | 1.6W | 2 P-Channel (Dual) | 67m Ω @ 4.6A, 4.5V | 1.2V @ 25μA | Halogen Free | 1095pF @ 15V | 10nC @ 4.5V | 13ns | 20V | 4A | 12V | -20V | 0.067Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||
 | Mfr Part No ECH8660-TL-H | ON Semiconductor | Datasheet | 1410 | - | Min: 1 Mult: 1 | 33 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | 8-SMD, Flat Lead | 8 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2010 | e6 | yes | Active | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | N and P-Channel | 59m Ω @ 2A, 10V | Halogen Free | 240pF @ 10V | 4.4nC @ 10V | 30V | 4.5A | 20V | Logic Level Gate | 900μm | 2.9mm | 2.3mm | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IRFH7911TRPBF | Infineon Technologies | Datasheet | 2000 | - | Min: 1 Mult: 1 | 39 Weeks | Surface Mount | Surface Mount | 18-PowerVQFN | 18 | SILICON | 13A 28A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | Not For New Designs | 2 (1 Year) | 6 | EAR99 | 8.6MOhm | Matte Tin (Sn) | HIGH RELIABILITY | 3.4W | QUAD | NO LEAD | 260 | 30 | IRFH7911PBF | R-PQFP-N6 | Not Qualified | Dual | ENHANCEMENT MODE | 2.4W | DRAIN SOURCE | 2.4W 3.4W | 2 N-Channel (Dual) | SWITCHING | 8.6m Ω @ 12A, 10V | 2.35V @ 25μA | 1060pF @ 15V | 12nC @ 4.5V | 13A | 20V | 30V | 100A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 2.35 V | 939.8μm | 5.9944mm | 5mm | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||
| Mfr Part No FDS9933A | ON Semiconductor | Datasheet | 2400 | - | Min: 1 Mult: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 75MOhm | Tin (Sn) | -20V | 2W | GULL WING | -3.8A | Dual | ENHANCEMENT MODE | 2W | 6 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 75m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 600pF @ 10V | 10nC @ 4.5V | 9ns | 20V | 28 ns | 3.8A | -800mV | 8V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | -800 mV | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||
| Mfr Part No NVMFD5C466NLT1G | ON Semiconductor | Datasheet | 30400 | - | Min: 1 Mult: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | 8-PowerTDFN | 14A Ta 52A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | Tin (Sn) | NOT SPECIFIED | not_compliant | NOT SPECIFIED | 3W Ta 40W Tc | 2 N-Channel (Dual) | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 997pF @ 25V | 7nC @ 4.5V | 40V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BSL316CH6327XTSA1 | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 1.4A 1.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | AVALANCHE RATED | 500mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | N and P-Channel Complementary | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | Halogen Free | 282pF @ 15V | 0.6nC @ 5V | 30V | N-CHANNEL AND P-CHANNEL | 1.5A | 1.6V | 20V | -30V | 1.4A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 7 pF | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||
 | Mfr Part No FDC6304P | ON Semiconductor | Datasheet | 240000 | - | Min: 1 Mult: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 460mA | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 1.1Ohm | Tin (Sn) | -25V | 700mW | GULL WING | -460mA | Dual | ENHANCEMENT MODE | 900mW | 7 ns | 2 P-Channel (Dual) | SWITCHING | 1.1 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 62pF @ 10V | 1.5nC @ 4.5V | 8ns | 25V | 8 ns | -460mA | -860mV | 8V | -25V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||
 | Mfr Part No IRF7910PBF | Infineon Technologies | Datasheet | 28544 | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 12V | 2W | GULL WING | 10A | IRF7910PBF | Dual | ENHANCEMENT MODE | 2W | 9.4 ns | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 1730pF @ 6V | 26nC @ 4.5V | 22ns | 6.3 ns | 10A | 2V | 12V | 0.015Ohm | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 2 V | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||
 | Mfr Part No CSD88539ND | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 2 | 5 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | Active | 1 (Unlimited) | 8 | EAR99 | AVALANCHE RATED | 2.1W | GULL WING | 260 | CSD88539 | Dual | ENHANCEMENT MODE | 2.1W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 5A, 10V | 3.6V @ 250μA | 741pF @ 30V | 9.4nC @ 10V | 9ns | 60V | 4 ns | 15A | 3V | 20V | 6.3A | 0.034Ohm | 60V | 46A | METAL-OXIDE SEMICONDUCTOR | Standard | 1.75mm | 4.9mm | 3.91mm | 1.58mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||
| Mfr Part No AUIRF7343QTR | Infineon Technologies | Datasheet | 3200 | - | Min: 1 Mult: 1 | 26 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.7A 3.4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 2W | GULL WING | Dual | ENHANCEMENT MODE | 2W | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | N-CHANNEL AND P-CHANNEL | 3.4A | 1V | 20V | 4.7A | 0.05Ohm | 55V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 1 V | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||
 | Mfr Part No BSC0921NDIATMA1 | Infineon Technologies | Datasheet | 80 | - | Min: 1 Mult: 1 | 18 Weeks | Tin | Surface Mount | Surface Mount | 8-PowerTDFN | 8 | 17A 31A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | no | Active | 1 (Unlimited) | EAR99 | 1W | NOT SPECIFIED | not_compliant | NOT SPECIFIED | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1025pF @ 15V | 8.9nC @ 4.5V | 30V | 31A | 20V | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BSS138PS,115 | Nexperia USA Inc. | Datasheet | 2779 | - | Min: 1 Mult: 1 | 4 Weeks | Tin | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 9 ns | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | Active | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | LOGIC LEVEL COMPATIBLE | 420mW | GULL WING | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | 280mW | 2 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 3ns | 4 ns | 320mA | 1.2V | 20V | 60V | 0.32A | 60V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | No | No SVHC | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||
 | Mfr Part No DMC1028UFDB-7 | Diodes Incorporated | Datasheet | 72000 | - | Min: 1 Mult: 1 | 15 Weeks | Surface Mount | Surface Mount | 6-UDFN Exposed Pad | SILICON | 6A 3.4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | Active | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.36W | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | N and P-Channel | SWITCHING | 25m Ω @ 5.2A, 4.5V | 1V @ 250μA | 787pF @ 6V | 18.5nC @ 8V | 12V 20V | N-CHANNEL AND P-CHANNEL | 3.4A | 6A | 0.025Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IPG20N04S412AATMA1 | Infineon Technologies | Datasheet | 351 | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | Active | 1 (Unlimited) | EAR99 | Tin (Sn) | 41W | NOT SPECIFIED | not_compliant | NOT SPECIFIED | 2 N-Channel (Dual) | 12.2m Ω @ 17A, 10V | 4V @ 15μA | Halogen Free | 1470pF @ 25V | 18nC @ 10V | 40V | 20A | 40V | Standard | ROHS3 Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NVMFD5C672NLT1G | ON Semiconductor | Datasheet | 3200 | - | Min: 1 Mult: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | 8-PowerTDFN | YES | SILICON | 12A Ta 49A Tc | 2 | 22 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 260 | not_compliant | 30 | R-PDSO-F6 | 2 | ENHANCEMENT MODE | 3.1W | DRAIN | 11 ns | 3.1W Ta 45W Tc | 2 N-Channel (Dual) | 11.9m Ω @ 10A, 10V | 2.2V @ 30μA | 793pF @ 25V | 5.7nC @ 4.5V | 11A | 20V | 0.0168Ohm | 60V | 146A | 66 mJ | METAL-OXIDE SEMICONDUCTOR | 175°C | Standard | 1.1mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| Mfr Part No IPG20N06S415ATMA2 | Infineon Technologies | Datasheet | 1320 | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | Surface Mount | 8-PowerVDFN | 8 | SILICON | 2 | 17 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2005 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 8 | 50W | FLAT | NOT SPECIFIED | not_compliant | NOT SPECIFIED | Dual | ENHANCEMENT MODE | 50W | 12 ns | 2 N-Channel (Dual) | 15.5m Ω @ 17A, 10V | 4V @ 20μA | Halogen Free | 2260pF @ 25V | 29nC @ 10V | 2ns | 9 ns | 20A | 20V | 60V | 0.0155Ohm | 60V | 90 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 5.15mm | 6.15mm | ROHS3 Compliant |
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FDS9953A
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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IPG16N10S461ATMA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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NTJD4105CT2G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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NVMFD5C462NLT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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BSO211PHXUMA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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ECH8660-TL-H
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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IRFH7911TRPBF
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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FDS9933A
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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NVMFD5C466NLT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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BSL316CH6327XTSA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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FDC6304P
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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IRF7910PBF
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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CSD88539ND
Texas Instruments
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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AUIRF7343QTR
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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BSC0921NDIATMA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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BSS138PS,115
Nexperia USA Inc.
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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DMC1028UFDB-7
Diodes Incorporated
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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IPG20N04S412AATMA1
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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NVMFD5C672NLT1G
ON Semiconductor
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
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IPG20N06S415ATMA2
Infineon Technologies
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire