The category is 'Transistors - FETs, MOSFETs - Arrays'

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  • FET Type
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  • Rds On (Max) @ Id, Vgs
  • RoHS Status
  • Vgs(th) (Max) @ Id

Image

Part Number

Manufacturer

Datasheet

Availability

Pricing(USD)

Quantity

RoHS

Surface Mount

Number of Terminals

Transistor Element Material

Automotive

Category

Channel Mode

Drain Current-Max (ID)

ECCN (US)

EU RoHS

HTS

Ihs Manufacturer

Lead Shape

Manufacturer

Manufacturer Part Number

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (MOhm)

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

Maximum Operating Temperature (°C)

Maximum Power Dissipation (mW)

Minimum Operating Temperature (°C)

Mounting

Number of Elements

Number of Elements per Chip

Operating Temperature-Max

Operating Temperature-Min

Package Body Material

Package Description

Package Height

Package Length

Package Shape

Package Style

Package Width

Part Life Cycle Code

Part Package Code

PCB changed

PPAP

Process Technology

Reflow Temperature-Max (s)

Risk Rank

Rohs Code

Standard Package Name

Supplier Package

Supplier Temperature Grade

Tab

Typical Fall Time (ns)

Typical Gate Charge @ 10V (nC)

Typical Gate Charge @ Vgs (nC)

Typical Input Capacitance @ Vds (pF)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

JESD-609 Code

Pbfree Code

Part Status

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Pin Count

Reference Standard

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Channel Type

Avalanche Energy Rating (Eas)

FET Technology

Power Dissipation-Max (Abs)

Diameter

DATA2N6796JANTXV

Mfr Part No

DATA2N6796JANTXV

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Not Compliant

150

-55

Through Hole

4.54(Max)

3

No

TO-205AF

Unconfirmed

3

9.22(Max)

DATA-JANSR2N7616UB

Mfr Part No

DATA-JANSR2N7616UB

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

EAR99

Not Compliant

0.8

[email protected]

60

±10

125

600

-55

Surface Mount

1

1.42(Max)

3.25(Max)

2.74(Max)

4

No

CMOS

Module

Case UB

13(Max)

3.6(Max)@4.5V

166@25V

24(Max)

30(Max)

8(Max)

Active

4

Single

N

IRHNA57Z60

Mfr Part No

IRHNA57Z60

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

75 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

IRHNA57Z60

75

3.5@12V

30

±20

150

250000

-55

Surface Mount

1

1

150 °C

CERAMIC, METAL-SEALED COFIRED

HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

3.07(Max)

13.46(Max)

RECTANGULAR

CHIP CARRIER

17.65(Max)

Active

3

No

NOT SPECIFIED

5.39

No

SMD

SMD-2

50(Max)

200(Max)@12V

9110@25V

125(Max)

80(Max)

35(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

RADIATION HARDENED

FET General Purpose Power

BOTTOM

NO LEAD

NOT SPECIFIED

unknown

3

R-CBCC-N3

Not Qualified

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

75 A

0.0035 Ω

300 A

30 V

N

500 mJ

METAL-OXIDE SEMICONDUCTOR

300 W

IRHLUB7930Z4

Mfr Part No

IRHLUB7930Z4

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

0.53 A

Contact Export

Not Compliant

8541.21.00.95

INFINEON TECHNOLOGIES AG

No Lead

Infineon Technologies AG

IRHLUB7930Z4

0.53

[email protected]

60

±10

150

570

-55

Surface Mount

1

1

150 °C

UNSPECIFIED

UB-4

1.42(Max)

3.25(Max)

RECTANGULAR

SMALL OUTLINE

2.74(Max)

Active

4

No

NOT SPECIFIED

5.4

No

SMD

UB

27(Max)

3.6(Max)@4.5V

167@25V

22(Max)

27(Max)

22(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

DUAL

NO LEAD

NOT SPECIFIED

unknown

4

RH - 300K Rad(Si)

R-XDSO-N3

Not Qualified

Single

ENHANCEMENT MODE

SWITCHING

P-CHANNEL

0.53 A

1.4 Ω

60 V

P

METAL-OXIDE SEMICONDUCTOR

0.6 W

IRHF7110SCS

Mfr Part No

IRHF7110SCS

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

Contact Export

Not Compliant

8541.29.00.95

Through Hole

3.5

690@12V

100

±20

150

15000

-55

Through Hole

1

4.54(Max)

3

No

TO-205-AF

TO-39

40(Max)

11(Max)@12V

290@25V

25(Max)

40(Max)

20(Max)

Active

3

Single

N

9.22(Max)

IRHLUC770Z4

Mfr Part No

IRHLUC770Z4

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

Contact Export

Not Compliant

8541.29.00.95

0.89

[email protected]

60

±10

150

1000

-55

Surface Mount

2

2.03(Max)

4.32(Max)

6.22(Max)

6

No

LCC

LCC

12(Max)

3.6(Max)@4.5V

145@25V

15(Max)

30(Max)

8(Max)

Active

6

Dual

N

IRHNJ57034

Mfr Part No

IRHNJ57034

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

No Lead

Infineon Technologies AG

IRHNJ57034

22

30@12V

60

±20

150

75000

-55

Surface Mount

1

CHIP CARRIER, R-CBCC-N3

2.61(Max)

7.64(Max)

10.28(Max)

Active

3

No

R5

5.16

No

SMD

SMD-0.5

30(Max)

45(Max)@12V

1152@25V

100(Max)

35(Max)

25(Max)

Active

EAR99

unknown

3

Single

N

IRHNJ597230

Mfr Part No

IRHNJ597230

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

8 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

No Lead

Infineon Technologies AG

IRHNJ597230

8

505@12V

200

±20

150

75000

-55

Surface Mount

1

1

150 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

2.61(Max)

7.64(Max)

RECTANGULAR

CHIP CARRIER

10.28(Max)

Active

3

No

NOT SPECIFIED

5.35

No

SMD

SMD-0.5

105(Max)

45(Max)@12V

1344@25V

35(Max)

50(Max)

25(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

Other Transistors

BOTTOM

NO LEAD

NOT SPECIFIED

unknown

3

RH - 100K Rad(Si)

R-CBCC-N3

Not Qualified

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

P-CHANNEL

8 A

0.505 Ω

32 A

200 V

P

75 mJ

METAL-OXIDE SEMICONDUCTOR

75 W

2N7261JANSR

Mfr Part No

2N7261JANSR

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

EAR99

Not Compliant

8541.50.00.80

Through Hole

8

185@12V

100

±20

150

25000

-55

Through Hole

1

4.54(Max)

3

No

HEXFET

TO-205-AF

TO-39

Military

40(Max)

50(Max)@12V

1100@25V

32(Max)

40(Max)

25(Max)

Active

3

Single

N

9.22(Max)

2N7269JANSR

Mfr Part No

2N7269JANSR

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

EAR99

Not Compliant

8541.29.00.95

Through Hole

26

110@12V

200

±20

150

150000

-55

Through Hole

1

13.84(Max)

13.84(Max)

6.6(Max)

3

No

HEXFET

TO-254-AA

TO-254AA

Military

Tab

140(Max)

170(Max)@12V

4700@25V

140(Max)

140(Max)

33(Max)

Active

3

Single

N

IRHLNA797064SCS

Mfr Part No

IRHLNA797064SCS

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Contact Export

Not Compliant

56

60

2500000

Surface Mount

3.07(Max)

13.46(Max)

17.65(Max)

3

No

SMD-2

Active

3

P

IRHN57250SESCS

Mfr Part No

IRHN57250SESCS

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

31 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

IRHN57250SESCS

31

60@12V

200

±20

150

150000

-55

Surface Mount

1

1

CERAMIC, METAL-SEALED COFIRED

HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN

3.07(Max)

16(Max)

RECTANGULAR

CHIP CARRIER

11.55(Max)

Active

3

No

NOT SPECIFIED

5.39

No

SMD

SMD-1

80(Max)

132(Max)@12V

3860@25V

125(Max)

80(Max)

35(Max)

e0

Active

EAR99

TIN LEAD

BOTTOM

NO LEAD

NOT SPECIFIED

compliant

3

R-CBCC-N3

Not Qualified

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

0.06 Ω

124 A

200 V

N

300 mJ

METAL-OXIDE SEMICONDUCTOR

IRHY597130CM

Mfr Part No

IRHY597130CM

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

Contact Export

Not Compliant

8541.29.00.95

12.5

215@12V

100

±20

150

75000

-55

Through Hole

1

10.92(Max)

10.67(Max)

5.08(Max)

3

No

R5

TO-257AA

Tab

100(Max)

40(Max)@12V

1350@25V

55(Max)

30(Max)

25(Max)

Active

3

Single

P

IRF460PBF

Mfr Part No

IRF460PBF

Infineon Datasheet

-

-

Min: 1

Mult: 1

NO

2

SILICON

No

Power MOSFET

Enhancement

21 A

EAR99

Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Through Hole

Infineon Technologies AG

IRF460PBF

21

310@10V

500

±20

150

300000

-55

Through Hole

1

1

150 °C

METAL

FLANGE MOUNT, O-MBFM-P2

7.74(Max)

39.37(Max)

ROUND

FLANGE MOUNT

25.53(Max)

Active

2

No

HEXFET

NOT SPECIFIED

5.68

Yes

TO-204-AA

TO-3

Tab

98(Max)

190(Max)

190(Max)@10V

4300@25V

120(Max)

130(Max)

35(Max)

Unconfirmed

BOTTOM

PIN/PEG

NOT SPECIFIED

compliant

3

O-MBFM-P2

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-204AE

0.31 Ω

84 A

500 V

N

1200 mJ

METAL-OXIDE SEMICONDUCTOR

IRHG597110

Mfr Part No

IRHG597110

Infineon Datasheet

-

-

Min: 1

Mult: 1

NO

14

SILICON

No

Power MOSFET

Enhancement

0.96 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

IRHG597110

0.96

960@12V

100

±20

150

1400

-55

Through Hole

4

4

150 °C

CERAMIC, METAL-SEALED COFIRED

HERMETIC SEALED, CERAMIC PACKAGE-14

3.3(Max)

19.3(Max)

RECTANGULAR

IN-LINE

7.74(Max)

Active

14

No

NOT SPECIFIED

5.21

No

MO-036AB

MO-036AB

90(Max)

13.4(Max)@12V

390@25V

17(Max)

40(Max)

21(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

DUAL

THROUGH-HOLE

NOT SPECIFIED

unknown

14

R-CDIP-T14

Not Qualified

Quad

ENHANCEMENT MODE

SWITCHING

P-CHANNEL

MO-036AB

0.96 A

0.96 Ω

100 V

P

METAL-OXIDE SEMICONDUCTOR

1.4 W

IRHMS597160

Mfr Part No

IRHMS597160

Infineon Datasheet

-

-

Min: 1

Mult: 1

NO

3

SILICON

No

Power MOSFET

Enhancement

45 A

Contact Export

Not Compliant

8541.29.00.95

INTERNATIONAL RECTIFIER CORP

Through Hole

International Rectifier

IRHMS597160

45

50@12V

100

±20

150

208000

-55

Through Hole

1

1

150 °C

CERAMIC, METAL-SEALED COFIRED

FLANGE MOUNT, S-CSFM-P3

13.84(Max)

13.84(Max)

SQUARE

FLANGE MOUNT

6.6(Max)

Transferred

TO-254AA

3

No

R5

NOT SPECIFIED

7.87

No

TO-254-AA

TO-254AA

Tab

120(Max)

170(Max)@12V

6110@25V

140(Max)

70(Max)

35(Max)

e0

No

Active

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

SINGLE

PIN/PEG

NOT SPECIFIED

compliant

3

S-CSFM-P3

Not Qualified

Single

ENHANCEMENT MODE

ISOLATED

SWITCHING

P-CHANNEL

TO-254AA

45 A

0.05 Ω

180 A

100 V

P

480 mJ

METAL-OXIDE SEMICONDUCTOR

250 W

IRHM57260SESCS

Mfr Part No

IRHM57260SESCS

Infineon Datasheet

-

-

Min: 1

Mult: 1

No

Power MOSFET

Enhancement

Contact Export

Not Compliant

8541.29.00.95

Through Hole

35

49@12V

200

±20

150

208000

-55

Through Hole

1

13.84(Max)

13.84(Max)

6.6(Max)

3

No

TO-254-AA

TO-254AA

Tab

50(Max)

165(Max)@12V

5200@25V

125(Max)

80(Max)

35(Max)

Obsolete

3

Single

N

IRHF9130

Mfr Part No

IRHF9130

Infineon Datasheet

-

-

Min: 1

Mult: 1

NO

3

SILICON

No

Power MOSFET

Enhancement

6.5 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Through Hole

Infineon Technologies AG

IRHF9130

6.5

350@12V

100

±20

150

25000

-55

Through Hole

1

1

150 °C

CERAMIC, METAL-SEALED COFIRED

TO-39, 3 PIN

4.54(Max)

ROUND

CYLINDRICAL

Active

3

No

NOT SPECIFIED

5.16

No

TO-205-AF

TO-39

70(Max)

45(Max)@12V

1200@25V

50(Max)

70(Max)

30(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

Other Transistors

BOTTOM

WIRE

NOT SPECIFIED

unknown

3

O-CBCY-W3

Not Qualified

Single

ENHANCEMENT MODE

SWITCHING

P-CHANNEL

TO-205AF

6.5 A

0.35 Ω

26 A

100 V

P

165 mJ

METAL-OXIDE SEMICONDUCTOR

25 W

9.22(Max)

JANSF2N7545U3

Mfr Part No

JANSF2N7545U3

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

12.5 A

Contact Export

Supplier Unconfirmed

8541.29.00.95

INFINEON TECHNOLOGIES AG

No Lead

Infineon Technologies AG

JANSF2N7545U3

12.5

205@12V

100

±20

150

75000

-55

Surface Mount

1

1

CERAMIC, METAL-SEALED COFIRED

CHIP CARRIER, R-CBCC-N3

2.61(Max)

7.64(Max)

RECTANGULAR

CHIP CARRIER

10.28(Max)

Active

3

No

5.76

SMD

SMD-0.5

100(Max)

45(Max)@12V

1372@25V

55(Max)

30(Max)

25(Max)

Active

EAR99

BOTTOM

NO LEAD

compliant

3

MIL-19500; RH - 300K Rad(Si)

R-CBCC-N3

Qualified

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

P-CHANNEL

0.205 Ω

50 A

100 V

P

96 mJ

METAL-OXIDE SEMICONDUCTOR

IRHNA57260SE

Mfr Part No

IRHNA57260SE

Infineon Datasheet

-

-

Min: 1

Mult: 1

YES

3

SILICON

No

Power MOSFET

Enhancement

53.5 A

Contact Export

Not Compliant

8541.29.00.95

INFINEON TECHNOLOGIES AG

Infineon Technologies AG

IRHNA57260SE

53.5

38@12V

200

±20

150

250000

-55

Surface Mount

1

1

150 °C

CERAMIC, METAL-SEALED COFIRED

HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

3.07(Max)

13.46(Max)

RECTANGULAR

CHIP CARRIER

17.65(Max)

Active

3

No

NOT SPECIFIED

5.28

No

SMD

SMD-2

50(Max)

155(Max)@12V

6044@25V

125(Max)

80(Max)

35(Max)

e0

Active

EAR99

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

FET General Purpose Power

BOTTOM

NO LEAD

NOT SPECIFIED

unknown

3

R-CBCC-N3

Not Qualified

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

55 A

0.038 Ω

214 A

200 V

N

380 mJ

METAL-OXIDE SEMICONDUCTOR

300 W