The category is 'Transistors - FETs, MOSFETs - Arrays'
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Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Automotive | Category | Channel Mode | Drain Current-Max (ID) | ECCN (US) | EU RoHS | HTS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Continuous Drain Current (A) | Maximum Drain Source Resistance (MOhm) | Maximum Drain Source Voltage (V) | Maximum Gate Source Voltage (V) | Maximum Operating Temperature (°C) | Maximum Power Dissipation (mW) | Minimum Operating Temperature (°C) | Mounting | Number of Elements | Number of Elements per Chip | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Process Technology | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Tab | Typical Fall Time (ns) | Typical Gate Charge @ 10V (nC) | Typical Gate Charge @ Vgs (nC) | Typical Input Capacitance @ Vds (pF) | Typical Rise Time (ns) | Typical Turn-Off Delay Time (ns) | Typical Turn-On Delay Time (ns) | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | Additional Feature | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Channel Type | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Diameter |
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Mfr Part No DATA2N6796JANTXV | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Not Compliant | 150 | -55 | Through Hole | 4.54(Max) | 3 | No | TO-205AF | Unconfirmed | 3 | 9.22(Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No DATA-JANSR2N7616UB | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | EAR99 | Not Compliant | 0.8 | 60 | ±10 | 125 | 600 | -55 | Surface Mount | 1 | 1.42(Max) | 3.25(Max) | 2.74(Max) | 4 | No | CMOS | Module | Case UB | 13(Max) | 3.6(Max)@4.5V | 166@25V | 24(Max) | 30(Max) | 8(Max) | Active | 4 | Single | N | |||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHNA57Z60 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 75 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Infineon Technologies AG | IRHNA57Z60 | 75 | 3.5@12V | 30 | ±20 | 150 | 250000 | -55 | Surface Mount | 1 | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | 3.07(Max) | 13.46(Max) | RECTANGULAR | CHIP CARRIER | 17.65(Max) | Active | 3 | No | NOT SPECIFIED | 5.39 | No | SMD | SMD-2 | 50(Max) | 200(Max)@12V | 9110@25V | 125(Max) | 80(Max) | 35(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | RADIATION HARDENED | FET General Purpose Power | BOTTOM | NO LEAD | NOT SPECIFIED | unknown | 3 | R-CBCC-N3 | Not Qualified | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 75 A | 0.0035 Ω | 300 A | 30 V | N | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | |||||||||||||
Mfr Part No IRHLUB7930Z4 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 0.53 A | Contact Export | Not Compliant | 8541.21.00.95 | INFINEON TECHNOLOGIES AG | No Lead | Infineon Technologies AG | IRHLUB7930Z4 | 0.53 | 60 | ±10 | 150 | 570 | -55 | Surface Mount | 1 | 1 | 150 °C | UNSPECIFIED | UB-4 | 1.42(Max) | 3.25(Max) | RECTANGULAR | SMALL OUTLINE | 2.74(Max) | Active | 4 | No | NOT SPECIFIED | 5.4 | No | SMD | UB | 27(Max) | 3.6(Max)@4.5V | 167@25V | 22(Max) | 27(Max) | 22(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | Other Transistors | DUAL | NO LEAD | NOT SPECIFIED | unknown | 4 | RH - 300K Rad(Si) | R-XDSO-N3 | Not Qualified | Single | ENHANCEMENT MODE | SWITCHING | P-CHANNEL | 0.53 A | 1.4 Ω | 60 V | P | METAL-OXIDE SEMICONDUCTOR | 0.6 W | ||||||||||||||||
Mfr Part No IRHF7110SCS | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | Contact Export | Not Compliant | 8541.29.00.95 | Through Hole | 3.5 | 690@12V | 100 | ±20 | 150 | 15000 | -55 | Through Hole | 1 | 4.54(Max) | 3 | No | TO-205-AF | TO-39 | 40(Max) | 11(Max)@12V | 290@25V | 25(Max) | 40(Max) | 20(Max) | Active | 3 | Single | N | 9.22(Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHLUC770Z4 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | Contact Export | Not Compliant | 8541.29.00.95 | 0.89 | 60 | ±10 | 150 | 1000 | -55 | Surface Mount | 2 | 2.03(Max) | 4.32(Max) | 6.22(Max) | 6 | No | LCC | LCC | 12(Max) | 3.6(Max)@4.5V | 145@25V | 15(Max) | 30(Max) | 8(Max) | Active | 6 | Dual | N | |||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHNJ57034 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | No Lead | Infineon Technologies AG | IRHNJ57034 | 22 | 30@12V | 60 | ±20 | 150 | 75000 | -55 | Surface Mount | 1 | CHIP CARRIER, R-CBCC-N3 | 2.61(Max) | 7.64(Max) | 10.28(Max) | Active | 3 | No | R5 | 5.16 | No | SMD | SMD-0.5 | 30(Max) | 45(Max)@12V | 1152@25V | 100(Max) | 35(Max) | 25(Max) | Active | EAR99 | unknown | 3 | Single | N | |||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHNJ597230 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 8 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | No Lead | Infineon Technologies AG | IRHNJ597230 | 8 | 505@12V | 200 | ±20 | 150 | 75000 | -55 | Surface Mount | 1 | 1 | 150 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN | 2.61(Max) | 7.64(Max) | RECTANGULAR | CHIP CARRIER | 10.28(Max) | Active | 3 | No | NOT SPECIFIED | 5.35 | No | SMD | SMD-0.5 | 105(Max) | 45(Max)@12V | 1344@25V | 35(Max) | 50(Max) | 25(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | Other Transistors | BOTTOM | NO LEAD | NOT SPECIFIED | unknown | 3 | RH - 100K Rad(Si) | R-CBCC-N3 | Not Qualified | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | 8 A | 0.505 Ω | 32 A | 200 V | P | 75 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | ||||||||||
Mfr Part No 2N7261JANSR | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | EAR99 | Not Compliant | 8541.50.00.80 | Through Hole | 8 | 185@12V | 100 | ±20 | 150 | 25000 | -55 | Through Hole | 1 | 4.54(Max) | 3 | No | HEXFET | TO-205-AF | TO-39 | Military | 40(Max) | 50(Max)@12V | 1100@25V | 32(Max) | 40(Max) | 25(Max) | Active | 3 | Single | N | 9.22(Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No 2N7269JANSR | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | EAR99 | Not Compliant | 8541.29.00.95 | Through Hole | 26 | 110@12V | 200 | ±20 | 150 | 150000 | -55 | Through Hole | 1 | 13.84(Max) | 13.84(Max) | 6.6(Max) | 3 | No | HEXFET | TO-254-AA | TO-254AA | Military | Tab | 140(Max) | 170(Max)@12V | 4700@25V | 140(Max) | 140(Max) | 33(Max) | Active | 3 | Single | N | ||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHLNA797064SCS | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Contact Export | Not Compliant | 56 | 60 | 2500000 | Surface Mount | 3.07(Max) | 13.46(Max) | 17.65(Max) | 3 | No | SMD-2 | Active | 3 | P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHN57250SESCS | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 31 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Infineon Technologies AG | IRHN57250SESCS | 31 | 60@12V | 200 | ±20 | 150 | 150000 | -55 | Surface Mount | 1 | 1 | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | 3.07(Max) | 16(Max) | RECTANGULAR | CHIP CARRIER | 11.55(Max) | Active | 3 | No | NOT SPECIFIED | 5.39 | No | SMD | SMD-1 | 80(Max) | 132(Max)@12V | 3860@25V | 125(Max) | 80(Max) | 35(Max) | e0 | Active | EAR99 | TIN LEAD | BOTTOM | NO LEAD | NOT SPECIFIED | compliant | 3 | R-CBCC-N3 | Not Qualified | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 0.06 Ω | 124 A | 200 V | N | 300 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||
Mfr Part No IRHY597130CM | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | Contact Export | Not Compliant | 8541.29.00.95 | 12.5 | 215@12V | 100 | ±20 | 150 | 75000 | -55 | Through Hole | 1 | 10.92(Max) | 10.67(Max) | 5.08(Max) | 3 | No | R5 | TO-257AA | Tab | 100(Max) | 40(Max)@12V | 1350@25V | 55(Max) | 30(Max) | 25(Max) | Active | 3 | Single | P | |||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRF460PBF | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | NO | 2 | SILICON | No | Power MOSFET | Enhancement | 21 A | EAR99 | Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Through Hole | Infineon Technologies AG | IRF460PBF | 21 | 310@10V | 500 | ±20 | 150 | 300000 | -55 | Through Hole | 1 | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | 7.74(Max) | 39.37(Max) | ROUND | FLANGE MOUNT | 25.53(Max) | Active | 2 | No | HEXFET | NOT SPECIFIED | 5.68 | Yes | TO-204-AA | TO-3 | Tab | 98(Max) | 190(Max) | 190(Max)@10V | 4300@25V | 120(Max) | 130(Max) | 35(Max) | Unconfirmed | BOTTOM | PIN/PEG | NOT SPECIFIED | compliant | 3 | O-MBFM-P2 | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-204AE | 0.31 Ω | 84 A | 500 V | N | 1200 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||
Mfr Part No IRHG597110 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | NO | 14 | SILICON | No | Power MOSFET | Enhancement | 0.96 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Infineon Technologies AG | IRHG597110 | 0.96 | 960@12V | 100 | ±20 | 150 | 1400 | -55 | Through Hole | 4 | 4 | 150 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, CERAMIC PACKAGE-14 | 3.3(Max) | 19.3(Max) | RECTANGULAR | IN-LINE | 7.74(Max) | Active | 14 | No | NOT SPECIFIED | 5.21 | No | MO-036AB | MO-036AB | 90(Max) | 13.4(Max)@12V | 390@25V | 17(Max) | 40(Max) | 21(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | Other Transistors | DUAL | THROUGH-HOLE | NOT SPECIFIED | unknown | 14 | R-CDIP-T14 | Not Qualified | Quad | ENHANCEMENT MODE | SWITCHING | P-CHANNEL | MO-036AB | 0.96 A | 0.96 Ω | 100 V | P | METAL-OXIDE SEMICONDUCTOR | 1.4 W | ||||||||||||||||
Mfr Part No IRHMS597160 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | NO | 3 | SILICON | No | Power MOSFET | Enhancement | 45 A | Contact Export | Not Compliant | 8541.29.00.95 | INTERNATIONAL RECTIFIER CORP | Through Hole | International Rectifier | IRHMS597160 | 45 | 50@12V | 100 | ±20 | 150 | 208000 | -55 | Through Hole | 1 | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, S-CSFM-P3 | 13.84(Max) | 13.84(Max) | SQUARE | FLANGE MOUNT | 6.6(Max) | Transferred | TO-254AA | 3 | No | R5 | NOT SPECIFIED | 7.87 | No | TO-254-AA | TO-254AA | Tab | 120(Max) | 170(Max)@12V | 6110@25V | 140(Max) | 70(Max) | 35(Max) | e0 | No | Active | EAR99 | Tin/Lead (Sn/Pb) | Other Transistors | SINGLE | PIN/PEG | NOT SPECIFIED | compliant | 3 | S-CSFM-P3 | Not Qualified | Single | ENHANCEMENT MODE | ISOLATED | SWITCHING | P-CHANNEL | TO-254AA | 45 A | 0.05 Ω | 180 A | 100 V | P | 480 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | ||||||||
Mfr Part No IRHM57260SESCS | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | No | Power MOSFET | Enhancement | Contact Export | Not Compliant | 8541.29.00.95 | Through Hole | 35 | 49@12V | 200 | ±20 | 150 | 208000 | -55 | Through Hole | 1 | 13.84(Max) | 13.84(Max) | 6.6(Max) | 3 | No | TO-254-AA | TO-254AA | Tab | 50(Max) | 165(Max)@12V | 5200@25V | 125(Max) | 80(Max) | 35(Max) | Obsolete | 3 | Single | N | ||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No IRHF9130 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | NO | 3 | SILICON | No | Power MOSFET | Enhancement | 6.5 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Through Hole | Infineon Technologies AG | IRHF9130 | 6.5 | 350@12V | 100 | ±20 | 150 | 25000 | -55 | Through Hole | 1 | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | TO-39, 3 PIN | 4.54(Max) | ROUND | CYLINDRICAL | Active | 3 | No | NOT SPECIFIED | 5.16 | No | TO-205-AF | TO-39 | 70(Max) | 45(Max)@12V | 1200@25V | 50(Max) | 70(Max) | 30(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | Other Transistors | BOTTOM | WIRE | NOT SPECIFIED | unknown | 3 | O-CBCY-W3 | Not Qualified | Single | ENHANCEMENT MODE | SWITCHING | P-CHANNEL | TO-205AF | 6.5 A | 0.35 Ω | 26 A | 100 V | P | 165 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | 9.22(Max) | |||||||||||||
Mfr Part No JANSF2N7545U3 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 12.5 A | Contact Export | Supplier Unconfirmed | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | No Lead | Infineon Technologies AG | JANSF2N7545U3 | 12.5 | 205@12V | 100 | ±20 | 150 | 75000 | -55 | Surface Mount | 1 | 1 | CERAMIC, METAL-SEALED COFIRED | CHIP CARRIER, R-CBCC-N3 | 2.61(Max) | 7.64(Max) | RECTANGULAR | CHIP CARRIER | 10.28(Max) | Active | 3 | No | 5.76 | SMD | SMD-0.5 | 100(Max) | 45(Max)@12V | 1372@25V | 55(Max) | 30(Max) | 25(Max) | Active | EAR99 | BOTTOM | NO LEAD | compliant | 3 | MIL-19500; RH - 300K Rad(Si) | R-CBCC-N3 | Qualified | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | 0.205 Ω | 50 A | 100 V | P | 96 mJ | METAL-OXIDE SEMICONDUCTOR | |||||||||||||||||||||
Mfr Part No IRHNA57260SE | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | YES | 3 | SILICON | No | Power MOSFET | Enhancement | 53.5 A | Contact Export | Not Compliant | 8541.29.00.95 | INFINEON TECHNOLOGIES AG | Infineon Technologies AG | IRHNA57260SE | 53.5 | 38@12V | 200 | ±20 | 150 | 250000 | -55 | Surface Mount | 1 | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | 3.07(Max) | 13.46(Max) | RECTANGULAR | CHIP CARRIER | 17.65(Max) | Active | 3 | No | NOT SPECIFIED | 5.28 | No | SMD | SMD-2 | 50(Max) | 155(Max)@12V | 6044@25V | 125(Max) | 80(Max) | 35(Max) | e0 | Active | EAR99 | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | FET General Purpose Power | BOTTOM | NO LEAD | NOT SPECIFIED | unknown | 3 | R-CBCC-N3 | Not Qualified | Single | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | 55 A | 0.038 Ω | 214 A | 200 V | N | 380 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W |
DATA2N6796JANTXV
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
DATA-JANSR2N7616UB
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
IRHNA57Z60
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
Price: please inquire
IRHLUB7930Z4
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHF7110SCS
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHLUC770Z4
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHNJ57034
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHNJ597230
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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2N7261JANSR
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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2N7269JANSR
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHLNA797064SCS
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHN57250SESCS
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHY597130CM
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRF460PBF
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHG597110
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHMS597160
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHM57260SESCS
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHF9130
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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JANSF2N7545U3
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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IRHNA57260SE
Infineon
Package:Transistors - FETs, MOSFETs - Arrays
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