The category is 'Miscellaneous'
Miscellaneous (1)
- All Manufacturers
- Case Connection
- Collector Current-Max (IC)
- Collector-Emitter Voltage-Max
- Composition
- Configuration
- Failure Rate
- Features
- Gate-Emitter Thr Voltage-Max
- Gate-Emitter Voltage-Max
- Height Seated (Max)
- JESD-30 Code
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- Series:
MBA/SMA 0204 - Professional
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Risk Rank | Turn-on Time-Max (ton) | Turn-on Time-Nom (ton) | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | Part Status | Number of Terminations | Temperature Coefficient | Resistance | Composition | Power (Watts) | Subcategory | Terminal Position | Terminal Form | Reach Compliance Code | JESD-30 Code | Qualification Status | Failure Rate | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Power Dissipation Ambient-Max | Features | Height Seated (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No BSM15GD100D | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | Axial | NO | -- | 17 | SILICON | SIEMENS A G | Infineon | BSM15GD100D | 6 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D17 | RECTANGULAR | FLANGE MOUNT | Transferred | 5.28 | 20 ns | 15 ns | -55°C ~ 155°C | Tape & Box (TB) | MBA/SMA 0204 - Professional | 0.063 Dia x 0.142 L (1.60mm x 3.60mm) | ±1% | Active | 2 | ±50ppm/°C | 3.32 Ohms | Thin Film | 0.4W | Insulated Gate BIP Transistors | UPPER | SOLDER LUG | unknown | R-PUFM-D17 | Not Qualified | -- | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 125 W | 15 A | 1000 V | 20 V | 3.3 V | 6.2 V | 150 W | -- | -- |

