The category is 'Memory'
Memory (6000)
- All Manufacturers
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- Part Status
- RoHS Status
- Memory Format
- Memory Interface
- Memory Size
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- Package / Case
- Voltage - Supply
- Moisture Sensitivity Level (MSL)
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Memory Size | Operating Supply Current | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Page Size | I2C Control Byte | Product Category | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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 | Mfr Part No CY7C1380S-167BZC | Cypress Semiconductor Corp | Datasheet | 42 |
| Min: 1 Mult: 1 | Surface Mount | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | Obsolete | 3 (168 Hours) | 165 | PIPELINED ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | BOTTOM | 1 | 3.3V | 1mm | unknown | CY7C1380 | 3.6V | 3.135V | 18Mb 512K x 36 | 167MHz | 3.4ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.4mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No S25FL064P0XMFA003 | Cypress Semiconductor Corp | Datasheet | 769 |
| Min: 1 Mult: 1 | 13 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | Automotive, AEC-Q100, FL-P | Active | 3 (168 Hours) | 16 | 8542.32.00.51 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | R-PDSO-G16 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 5μs, 3ms | 67108864 bit | SERIAL | 3V | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61LV25616AL-10TLI-TR | ISSI, Integrated Silicon Solution Inc | Datasheet | - |
| Min: 1 Mult: 1 | 8 Weeks | Surface Mount | Surface Mount | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | Active | 3 (168 Hours) | 44 | Matte Tin (Sn) | 3.135V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 40 | 44 | 3.3V | 3.63V | 4Mb 256K x 16 | 1 | 110mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 2V | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No GS882Z18CGB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 42 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS882Z18CGB | NBT Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 120 mA, 130 mA | 7.5 ns | 512 k x 18 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS88018CGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88018CGT-150I | 150 MHz | + 85 C | SDR | - 40 C | Yes | 3 | SMD/SMT | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.3 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88018CGT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 150 mA | 7.5 ns | 512 k x 18 | 3-STATE | 1.6 mm | 18 | SRAM | 0.045 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8162Z18DB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 21 | Parallel | GSI Technology | 150 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 3.6 V | 2.3 V | NBT SRAM | Tray | GS8162Z18DB | NBT Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 190 mA, 200 mA | 7.5 ns | 1 M x 18 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS816136DD-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 36 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | N | 3.6 V | 2.3 V | SyncBurst | Tray | GS816136DD | Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 180 mA, 190 mA | 7.5 ns | 512 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS842Z36CGB-100I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | SDR | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z36CGB-100I | 100 MHz | 83.3@Flow-Through/100@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 128 kWords | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.35 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS842Z36CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 4 Mbit | 4 | SYNCHRONOUS | 130 mA, 140 mA | 12 ns | Flow-Through/Pipelined | 128 k x 36 | 3-STATE | 1.99 mm | 36 | 17 Bit | SRAM | 4 Mbit | 0.045 A | 4718592 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS842Z18CB-100I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CB-100I | 100 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.36 | No | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 130 mA | 12 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.045 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS880E32CGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS880E32CGT | DCD | Memory & Data Storage | 9 Mbit | 155 mA, 195 mA | 5.5 ns | 256 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8672D18BE-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8672D18BE-333I | 333 MHz | + 85 C | QDR-II | - 40 C | Yes | SMD/SMT | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.43 | No | 1.9 V | 1.7 V | 1.8 V | SigmaQuad-II | Tray | GS8672D18BE | 3A991.B.2.B | SigmaQuad-II | PIPELINE ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | SYNCHRONOUS | 1.21 A | 4 M x 18 | 3-STATE | 1.5 mm | 18 | SRAM | 72 | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | SRAM | 17 mm | 15 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS882Z18CB-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8672D18BE-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 15 | Parallel | GSI Technology | 400 MHz | + 85 C | QDR-II | - 40 C | Yes | SMD/SMT | 1.9 V | 1.7 V | SigmaQuad-II | Tray | GS8672D18BE | SigmaQuad-II | Memory & Data Storage | 72 Mbit | 1.38 A | 4 M x 18 | SRAM | 72 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MX25V8035FZUI | Macronix | Datasheet | 19008 | - | Min: 1 Mult: 1 | 10 Weeks | Surface Mount | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2017 | MXSMIO™ | yes | Active | 3 (168 Hours) | 8 | ALSO IT CAN BE CONFIGURED AS 8M X 1 BIT | 2.3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 0.5mm | NOT SPECIFIED | R-PDSO-N8 | 3.6V | 2.3V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 2MX4 | 4 | 100μs, 4ms | 8388608 bit | 3V | 2 | 0.6mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CYD09S18V18-167BBXC | Cypress Semiconductor Corp | Datasheet | 2209 |
| Min: 1 Mult: 1 | Surface Mount | Surface Mount | 256-LBGA | 256 | Volatile | 0°C~70°C TA | Tray | 2005 | e1 | Obsolete | 5 (48 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 1.42V~1.58V 1.7V~1.9V | BOTTOM | 260 | 1 | 1.5V | 1mm | unknown | 20 | CYD09S18 | 256 | Not Qualified | 1.8V | 1.58V | 9Mb 512K x 18 | 2 | 580mA | 167MHz | 4ns | SRAM | Parallel | 3-STATE | 18 | 19b | 9 Mb | COMMON | Synchronous | 18b | 1.4V | 1.7mm | 17mm | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No S25FL512SAGMFIR13 | Cypress Semiconductor Corp | Datasheet | - |
| Min: 1 Mult: 1 | 13 Weeks | Tin | Surface Mount | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | FL-S | e3 | Active | 3 (168 Hours) | 16 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | Not Qualified | 3V | 3.6V | 2.7V | Parallel, SPI, Serial | 512Mb 64M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 64MX8 | 8 | 32b | 512 Mb | 0.0001A | Asynchronous | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 512B | 2.65mm | 10.3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No 24AA1026T-I/SM | Microchip Technology | Datasheet | 3880 | - | Min: 1 Mult: 1 | 5 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | Active | 1 (Unlimited) | 8 | EAR99 | 200 YEARS DATA RETENTION | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24AA1026 | 8 | 5.5V | 1.7V | I2C, Serial | 1Mb 128K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 Mb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDMR | 2.03mm | 5.26mm | 5.25mm | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No SST25VF040B-50-4I-QAE | Microchip Technology | Datasheet | 392 |
| Min: 1 Mult: 1 | 12 Weeks | Surface Mount | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1998 | SST25 | e3 | Active | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 1.27mm | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 50MHz | FLASH | SPI | 4MX1 | 1 | 10μs | 4 Mb | 2.7V | 6mm | 5mm | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MR4A16BCYS35 | Everspin Technologies Inc. | Datasheet | 4800 | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | Surface Mount | 54-TSOP (0.400, 10.16mm Width) | 54 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | e3 | Active | 3 (168 Hours) | 54 | EAR99 | Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 54 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 110mA | 180mA | RAM | Parallel | 16b | 1MX16 | 16 | 35ns | 16 Mb | 0.014A | 35 ns | 16b | 1.2mm | 22.22mm | No | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8161Z36DGD-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks, 6 Days | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z36DGD-150 | 150 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.26 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z36DGD | 3A991.B.2.B | NBT | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 180 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 36 | 1.4 mm | 36 | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm |
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CY7C1380S-167BZC
Cypress Semiconductor Corp
Package:Memory
3.648317
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S25FL064P0XMFA003
Cypress Semiconductor Corp
Package:Memory
0.307646
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IS61LV25616AL-10TLI-TR
ISSI, Integrated Silicon Solution Inc
Package:Memory
7.046513
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GS882Z18CGB-150
GSI Technology
Package:Memory
Price: please inquire
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GS88018CGT-150I
GSI Technology
Package:Memory
Price: please inquire
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GS8162Z18DB-150I
GSI Technology
Package:Memory
Price: please inquire
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GS816136DD-150
GSI Technology
Package:Memory
Price: please inquire
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GS842Z36CGB-100I
GSI Technology
Package:Memory
Price: please inquire
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GS842Z18CB-100I
GSI Technology
Package:Memory
Price: please inquire
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GS880E32CGT-250
GSI Technology
Package:Memory
Price: please inquire
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GS8672D18BE-333I
GSI Technology
Package:Memory
Price: please inquire
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GS882Z18CB-250
GSI Technology
Package:Memory
Price: please inquire
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GS8672D18BE-400I
GSI Technology
Package:Memory
Price: please inquire
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MX25V8035FZUI
Macronix
Package:Memory
Price: please inquire
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CYD09S18V18-167BBXC
Cypress Semiconductor Corp
Package:Memory
141.533388
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S25FL512SAGMFIR13
Cypress Semiconductor Corp
Package:Memory
8.349261
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24AA1026T-I/SM
Microchip Technology
Package:Memory
Price: please inquire
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SST25VF040B-50-4I-QAE
Microchip Technology
Package:Memory
1.222827
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MR4A16BCYS35
Everspin Technologies Inc.
Package:Memory
Price: please inquire
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GS8161Z36DGD-150
GSI Technology
Package:Memory
Price: please inquire