The category is 'Memory'
Memory (6000)
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- Moisture Sensitivity Level (MSL)
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Active Read Current - Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Data Retention | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part # Aliases | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Shipping Restrictions | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Refresh Cycles | Common Flash Interface | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Product Category | Memory Organization | Height | Height Seated (Max) | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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 | Mfr Part No BR93H76RF-2CE2 | ROHM Semiconductor | Datasheet | 40 | - | Min: 1 Mult: 1 | 16 Weeks | Surface Mount | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | Automotive grade | -40°C~125°C TA | Cut Tape (CT) | 2012 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 4V | 1.27mm | NOT SPECIFIED | Not Qualified | 5.5V | 3/5V | 2.5V | 8Kb 512 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 512X16 | 16 | 4ms | 0.00001A | SERIAL | MICROWIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MX25L5121EMC-20G | Macronix | Datasheet | 6000 |
| Min: 1 Mult: 1 | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | 0°C~70°C TA | Tube | 2017 | Not For New Designs | 8 | EAR99 | 8542.32.00.51 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | 8 | R-PDSO-G8 | Not Qualified | 3.6V | 3/3.3V | 2.7V | 512Kb 64K x 8 | SYNCHRONOUS | 45MHz | FLASH | SPI | 512KX1 | 1 | -, 650μs | 0.000008A | 524288 bit | SERIAL | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No SST26VF032-80-5I-S2AE-T | Microchip Technology | Datasheet | 14 | - | Min: 1 Mult: 1 | 22 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | SST26 SQI® | e3 | Active | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1.27mm | SST26VF032 | 3.3V | SPI, Serial | 32Mb 4M x 8 | 18mA | 80MHz | 6 ns | FLASH | SPI - Quad I/O | 8b | 8 | 1.5ms | 1b | 32 Mb | 0.000015A | Synchronous | SPI | 100000 Write/Erase Cycles | 100 | SOFTWARE | 256B | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS41LV16100D-50TLI | ISSI, Integrated Silicon Solution Inc | Datasheet | 20 |
| Min: 1 Mult: 1 | 10 Weeks | Surface Mount | 50-TSOP (0.400, 10.16mm Width), 44 Leads | YES | Volatile | -40°C~85°C TA | Tray | Active | 3 (168 Hours) | 44 | AUTO/SELF REFRESH; RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 0.8mm | NOT SPECIFIED | R-PDSO-G44 | 3.6V | 3V | 16Mb 1M x 16 | 1 | ASYNCHRONOUS | 25ns | DRAM | Parallel | 1MX16 | 16 | 16777216 bit | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No M24512-DRMN6TP | STMicroelectronics | Datasheet | 2000 | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | Obsolete | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 1.27mm | M24512 | Not Qualified | 5.5V | 2/5V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | 5mA | SYNCHRONOUS | 1MHz | 500ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000001A | 5V | I2C | 4000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1357C-100BZC | Cypress Semiconductor Corp | Datasheet | 120 |
| Min: 1 Mult: 1 | 6 Weeks | Surface Mount | Surface Mount | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | NoBL™ | e0 | no | Active | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.135V~3.6V | BOTTOM | 235 | 1 | 3.3V | 1mm | 20 | CY7C1357 | 165 | 3.3V | 3.6V | 3.135V | 9Mb 512K x 18 | 2 | 180mA | 100MHz | 7.5ns | SRAM | Parallel | 3-STATE | 18 | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.14V | 1.4mm | 15mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No 93C56C-E/SN | Microchip Technology | Datasheet | 24 | - | Min: 1 Mult: 1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C56C | 8 | 5V | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No SST49LF016C-33-4C-WHE-T | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 32-TFSOP (0.488, 12.40mm Width) | 32 | Non-Volatile | 0°C~85°C TA | Tape & Reel (TR) | 2000 | SST49 | Obsolete | 3 (168 Hours) | 32 | 3V~3.6V | DUAL | 3.3V | 0.5mm | SST49LF016C | 3.3V | Parallel, SPI, Serial | 16Mb 2M x 8 | 18mA | 33MHz | 11 ns | FLASH | Parallel | 8b | 2MX8 | 8 | 10μs | 4b | 16 Mb | 0.0001A | Synchronous | 8b | NO | NO | 12131 | 128B | YES | TOP | No | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No SST25WF020AT-40I/NP | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST25 | e3 | Active | 1 (Unlimited) | 8 | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 0.5mm | 40 | SST25WF020 | 1.8V | 1.95V | 1.65V | SPI, Serial | 2Mb 256K x 8 | 40MHz | 11 ns | FLASH | SPI | 8b | 2MX1 | 1 | 3.5ms | 24b | 2 Mb | 256B | 0.6mm | 3mm | No | No SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No BR93G66NUX-3BTTR | Rohm Semiconductor | Datasheet | 40 | - | Min: 1 Mult: 1 | Production (Last Updated: 2 years ago) | Surface Mount | 8-UFDFN Exposed Pad | YES | VSON008X2030 | 8 | 3 mA | BR93G66 | ROHM Semiconductor | 3 MHz | 40 Year | 4000 | ROHM CO LTD | 3-Wire | ROHM Semiconductor | BR93G66NUX-3BTTR | 3 MHz | + 85 C | Non-Volatile | Rohm Semiconductor | - 40 C | SMD/SMT | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | BR93G66NUX-3B | Active | Active | NOT SPECIFIED | 2.28 | Details | Yes | 5.5 V | 1.7 V | 5 V | -40°C ~ 105°C (TA) | MouseReel | ALSO AVAILABLE 2.5V OPERATES WITH 2MHZ AND 1.7V OPERATES WITH 1MHZ, SEATED HT-CALCULATED | Memory & Data Storage | 1.7V ~ 5.5V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.5 mm | compliant | R-PDSO-N8 | 1.7 V to 5.5 V | 5.5 V | INDUSTRIAL | 4.5 V | 4Kbit | SYNCHRONOUS | 3 MHz | 3 mA | EEPROM | Microwire | 256 x 16 | 0.6 mm | 16 | 5ms | EEPROM | 4 kb | 4096 bit | SERIAL | EEPROM | 3-WIRE | 5 ms | EEPROM | 256 x 16 | 3 mm | 2 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No M29F160FT55N3E2 | Micron Technology Inc. | Datasheet | 144 | - | Min: 1 Mult: 1 | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | Automotive grade | -40°C~125°C TA | Tray | 2014 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | MATTE TIN | TOP BOOT BLOCK | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 30 | M29F160 | 48 | 5V | 5V | 4.5V | 16Mb 2M x 8 1M x 16 | 20mA | FLASH | Parallel | 1MX16 | 16 | 55ns | 16 Mb | 0.00012A | AEC-Q100 | 55 ns | Asynchronous | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | No | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS45S32200E-7TLA1 | ISSI, Integrated Silicon Solution Inc | Datasheet | 1646 | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | Not Qualified | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 140mA | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | 13b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No S29GL01GS12DHVV10 | Cypress Semiconductor Corp | Datasheet | 4664 |
| Min: 1 Mult: 1 | 13 Weeks | Copper, Silver, Tin | Surface Mount | Surface Mount | 64-LBGA | 64 | Non-Volatile | -40°C~105°C TA | Tray | 2007 | GL-S | Active | 3 (168 Hours) | 64 | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 1 | 3V | 1mm | Not Qualified | 3.6V | 1.8/3.33/3.3V | 2.7V | 1Gb 64M x 16 | ASYNCHRONOUS | 0.08mA | 120ns | FLASH | Parallel | 16 | 60ns | 26b | 1 Gb | 0.0002A | 3V | YES | YES | YES | 1K | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 25LC010A-H/SN | Microchip Technology | Datasheet | 8000 |
| Min: 1 Mult: 1 | 6 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~150°C TA | Tube | 2012 | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 1 kb | SPI | 6ms | 1.75mm | 4.9mm | 3.9mm | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No S25FL064LABMFV000 | Cypress Semiconductor Corp | Datasheet | 60 | - | Min: 1 Mult: 1 | 13 Weeks | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | FL-L | Active | 3 (168 Hours) | 16 | IT IS ALSO CONFIGURED AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | NOT SPECIFIED | 1 | 3V | 1.27mm | NOT SPECIFIED | R-PDSO-G16 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8662TT37BGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT37BGD-400 | 400 MHz | 400 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662TT37BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 800 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 72 Mbit | 0.245 A | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS81302TT07E-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | DDR | 10 | Parallel | GSI Technology | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 8 Bit | 16 MWords | FBGA | 1.9 V | 1.7 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS81302TT07E | SigmaDDR-II+ B2 | Memory & Data Storage | 165 | 144 Mbit | 1 | 765 mA | Pipelined | 16 M x 8 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8322Z72GC-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-209 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 72 Bit | 512 kWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8322Z72GC | NBT Pipeline/Flow Through | Memory & Data Storage | 209 | 36 Mbit | 8 | 235 mA, 320 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 72 | 19 Bit | SRAM | 36 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8687501XA | Renesas Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 48-DIP (0.600", 15.24mm) | 48-SIDE BRAZED | 5962-8687501 | Renesas Electronics | 8 | Parallel | Renesas Electronics | + 125 C | Volatile | Renesas Electronics America Inc | - 55 C | Tube | Last Time Buy | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 8Kbit | 65 mA | 90 ns | SRAM | Parallel | 1 k x 8 | 90ns | SRAM | SRAM | 1K x 8 | 3.3 mm | 61.72 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS81302D10GE-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | QDR | Parallel | 400 MHz | 400 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 9 Bit | 16 MWords | FBGA | 1.9 V | 1.7 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | GS81302D10GE | 165 | 144 Mbit | 2 | 1.065 A | Pipelined | 16 M x 9 | 22 Bit | 144 Mbit | Industrial |
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BR93H76RF-2CE2
ROHM Semiconductor
Package:Memory
Price: please inquire
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MX25L5121EMC-20G
Macronix
Package:Memory
0.358684
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SST26VF032-80-5I-S2AE-T
Microchip Technology
Package:Memory
Price: please inquire
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IS41LV16100D-50TLI
ISSI, Integrated Silicon Solution Inc
Package:Memory
7.309814
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M24512-DRMN6TP
STMicroelectronics
Package:Memory
Price: please inquire
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CY7C1357C-100BZC
Cypress Semiconductor Corp
Package:Memory
0.514900
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93C56C-E/SN
Microchip Technology
Package:Memory
Price: please inquire
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SST49LF016C-33-4C-WHE-T
Microchip Technology
Package:Memory
Price: please inquire
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SST25WF020AT-40I/NP
Microchip Technology
Package:Memory
Price: please inquire
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BR93G66NUX-3BTTR
Rohm Semiconductor
Package:Memory
Price: please inquire
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M29F160FT55N3E2
Micron Technology Inc.
Package:Memory
Price: please inquire
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IS45S32200E-7TLA1
ISSI, Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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S29GL01GS12DHVV10
Cypress Semiconductor Corp
Package:Memory
13.134504
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25LC010A-H/SN
Microchip Technology
Package:Memory
0.759826
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S25FL064LABMFV000
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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GS8662TT37BGD-400
GSI Technology
Package:Memory
Price: please inquire
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GS81302TT07E-333I
GSI Technology
Package:Memory
Price: please inquire
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GS8322Z72GC-200
GSI Technology
Package:Memory
Price: please inquire
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5962-8687501XA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
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GS81302D10GE-400I
GSI Technology
Package:Memory
Price: please inquire