The category is 'Memory'
Memory (6000)
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- RoHS Status
- Memory Format
- Memory Interface
- Memory Size
- Memory Types
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- Operating Temperature
- Package / Case
- Voltage - Supply
- Moisture Sensitivity Level (MSL)
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status |
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![]() | Mfr Part No AT28C256E-30DM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E32DGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 250 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS8161E32DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 250 mA, 270 mA | 5.5 ns | 512 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8182D18BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | DDR | 18 | Parallel | GSI Technology | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | FBGA | 1.9 V | 1.7 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 70 °C | Tray | GS8182D18BGD | SigmaQuad-II | Memory & Data Storage | 165 | 18 Mbit | 2 | 420 mA | Pipelined | 1 M x 18 | 18 Bit | SRAM | 18 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr Part No S34ML04G100TFI003 | Cypress Semiconductor Corp | Datasheet | 3600 | - | Min: 1 Mult: 1 | 99 Weeks | Surface Mount | Surface Mount | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | ML-1 | e3 | Discontinued | 3 (168 Hours) | 48 | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.3V | 3.6V | 2.7V | 4Gb 512M x 8 | 30mA | 20 ns | FLASH | Parallel | 8b | 512MX8 | 8 | 25ns | 30b | 4 Gb | 0.00005A | Asynchronous | 8b | 3V | NO | NO | YES | 4K | 128K | 2kB | YES | 1.2mm | 18.4mm | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W949D6CBHX6E | Winbond Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 5 ns | 166 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W949D6CBHX6E | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | NOT SPECIFIED | 5.37 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.075 mA | 32MX16 | 3-STATE | 1.025 mm | 16 | 0.00001 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8,16 | 2,4,8,16 | FOUR BANK PAGE BURST | YES | 9 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342TT07BD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342TT07BD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342TT07BD | e0 | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 460 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 33554432 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS881E18CGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS881E18CGT | DCD Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 120 mA, 130 mA | 7.5 ns | 512 k x 18 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 3 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AD | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8182D37BD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 18 | Parallel | GSI Technology | 400 MHz | + 70 C | DDR | 0 C | Yes | SMD/SMT | N | 1.9 V | 1.7 V | SigmaQuad-II+ | Tray | GS8182D37BD | SigmaQuad II+ | Memory & Data Storage | 18 Mbit | 670 mA | 512 k x 36 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E36DGD-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 36 | Parallel | GSI Technology | 200 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS8161E36DGD | DCD Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 210 mA | 6.5 ns | 512 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z36AGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8321Z36AGD | NBT | Memory & Data Storage | 165 | 36 Mbit | 4 | 230 mA, 285 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | SRAM | 36 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816236DB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 21 | Parallel | GSI Technology | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS816236DB | Pipeline/Flow Through | Memory & Data Storage | 119 | 18 Mbit | 4 | 180 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8672T36BGE-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 15 | Parallel | GSI Technology | 333 MHz | + 85 C | DDR-II | - 40 C | Yes | SMD/SMT | Details | 1.9 V | 1.7 V | SigmaDDR-II | Tray | GS8672T36BGE | SigmaDDR-II | Memory & Data Storage | 72 Mbit | 1.28 A | 2 M x 36 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8162Z18DD-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8162Z18DD | NBT Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 2 | 215 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8182D09BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 18 | Parallel | GSI Technology | 250 MHz | + 70 C | DDR | 0 C | Yes | SMD/SMT | Details | 1.9 V | 1.7 V | SigmaQuad-II | Tray | GS8182D09BGD | SigmaQuad-II | Memory & Data Storage | 18 Mbit | 420 mA | 2 M x 9 | SRAM | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342T09BD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T09BD-300 | 300 MHz | 300 MHz | + 70 C | DDR | 0 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342T09BD | 3A991.B.2.B | SigmaDDR-II B2 | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 450 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 36 Mbit | 0.185 A | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832236AGB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-150I | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 210 mA, 220 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864436E-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | SDR | 15 | Parallel | GSI Technology | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864436E | Synchronous Burst | Memory & Data Storage | 165 | 72 Mbit | 4 | 295 mA, 380 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816118DD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 36 | Parallel | GSI Technology | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | N | 3.6 V | 2.3 V | SyncBurst | Tray | GS816118DD | Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 210 mA, 230 mA | 5.5 ns | 1 M x 18 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816132DGD-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-165 | GSI Technology | 36 | Parallel | GSI Technology | 200 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS816132DGD | Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 210 mA | 6.5 ns | 512 k x 32 | SRAM | SRAM |
AT28C256E-30DM/883
Atmel
Package:Memory
Price: please inquire
GS8161E32DGT-250I
GSI Technology
Package:Memory
Price: please inquire
GS8182D18BGD-250
GSI Technology
Package:Memory
Price: please inquire
S34ML04G100TFI003
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
W949D6CBHX6E
Winbond Electronics Corporation
Package:Memory
Price: please inquire
GS8342TT07BD-300I
GSI Technology
Package:Memory
Price: please inquire
GS881E18CGT-150
GSI Technology
Package:Memory
Price: please inquire
GS8322Z36AD-250I
GSI Technology
Package:Memory
Price: please inquire
GS8182D37BD-400
GSI Technology
Package:Memory
Price: please inquire
GS8161E36DGD-200
GSI Technology
Package:Memory
Price: please inquire
GS8321Z36AGD-250
GSI Technology
Package:Memory
Price: please inquire
GS816236DB-150
GSI Technology
Package:Memory
Price: please inquire
GS8672T36BGE-333I
GSI Technology
Package:Memory
Price: please inquire
GS8162Z18DD-200I
GSI Technology
Package:Memory
Price: please inquire
GS8182D09BGD-250
GSI Technology
Package:Memory
Price: please inquire
GS8342T09BD-300
GSI Technology
Package:Memory
Price: please inquire
GS832236AGB-150I
GSI Technology
Package:Memory
Price: please inquire
GS864436E-200I
GSI Technology
Package:Memory
Price: please inquire
GS816118DD-250
GSI Technology
Package:Memory
Price: please inquire
GS816132DGD-200
GSI Technology
Package:Memory
Price: please inquire
