The category is 'Memory'
Memory (1)
- All Manufacturers
- Access Time
- Base Part Number
- Base Product Number
- Capacitance @ Vr, F
- Current - Average Rectified (Io)
- Current - Reverse Leakage @ Vr
- Diode Type
- Memory Format
- Memory Interface
- Memory Organization
- Memory Size
- Memory Types
- Base Part Number:
HFA08TB60
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Memory Types | Mfr | Package | Product Status | Operating Temperature | Packaging | Series | Part Status | Technology | Voltage - Supply | Base Part Number | Memory Size | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Access Time | Memory Format | Memory Interface | Operating Temperature - Junction | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Write Cycle Time - Word, Page | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No CY7C1049D-10VXIT | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | TO-220-2 | TO-220AC | CY7C1049 | Volatile | Infineon Technologies | Tape & Reel (TR) | Obsolete | -40°C ~ 85°C (TA) | Tube | HEXFRED® | Discontinued at Digi-Key | SRAM - Asynchronous | 4.5V ~ 5.5V | HFA08TB60 | 4Mbit | Fast Recovery = 200mA (Io) | Standard | 5µA @ 600V | 1.7V @ 8A | 10 ns | SRAM | Parallel | -55°C ~ 150°C | 600V | 8A | 10ns | -- | 55ns | 512K x 8 |