The category is 'Memory'
Memory (403)
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- ECCN Code:
3A001.A.2.C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitivity Levels | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Shipping Restrictions | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Unit Weight | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Word Size | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Page Size | I2C Control Byte | Product Category | Memory Organization | Height | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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 | Mfr Part No 24LC16B-M/SN | Microchip Technology | Datasheet | 4160 | - | Min: 1 Mult: 1 | 6 Weeks | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -55°C~125°C TA | Tube | 2009 | e3 | yes | Active | 1 (Unlimited) | 8 | 3A001.A.2.C | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24LC16B | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 16Kb 2K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.5mm | 4.9mm | 3.9mm | No | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AT28HC256-90DM/883 | Microchip Technology | Datasheet | 2200 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1997 | e0 | Active | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN/LEAD (SN/PB) | AUTOMATIC WRITE | 8542.32.00.51 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | NOT SPECIFIED | AT28HC256 | R-GDIP-T28 | Not Qualified | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 90ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AT28C010-12DM/883 | Microchip Technology | Datasheet | 2095 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | 32-CDIP (0.600, 15.24mm) | NO | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 2011 | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 8542.32.00.51 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | AT28C010 | R-GDIP-T32 | 5.5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 42.2mm | 15.24mm | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010E-12DM/883 | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | 23 Weeks | Lead, Tin | Through Hole | Through Hole | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1998 | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 120GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 120ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 42.2mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-25DM/883 | Microchip Technology | Datasheet | 2297 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 250GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 250ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | YES | NO | 128words | 5.72mm | 42.2mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AT28C010-12LM/883 | Microchip Technology | Datasheet | 240 | - | Min: 1 Mult: 1 | 23 Weeks | Lead, Tin | Surface Mount | Surface Mount | 44-CLCC | 44 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1998 | e0 | Active | 1 (Unlimited) | 44 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 8542.32.00.51 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | 120GHz | AT28C010 | 5V | 5V | 1Mb 128K x 8 | 80mA | 120ns | EEPROM | Parallel | 128KX8 | 3-STATE | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | NO | 128words | 2.74mm | 16.55mm | 16.55mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 25LC640AT-M/SN | Microchip Technology | Datasheet | 44 |
| Min: 1 Mult: 1 | 6 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -55°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | Active | 1 (Unlimited) | 8 | 3A001.A.2.C | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC640A | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 64Kb 8K x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 5ms | 64 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.5mm | 4.9mm | 3.9mm | No | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-20DM/883 | Microchip Technology | Datasheet | 2264 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 200GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 200ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 42.2mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-15DM/883 | Microchip Technology | Datasheet | 784 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 150GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 150ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | YES | NO | 128words | 5.72mm | 42.2mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC256E-90DM/883 | Microchip Technology | Datasheet | 1812 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 28-CDIP (0.600, 15.24mm) | 28 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | e0 | Active | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN LEAD | AUTOMATIC WRITE | 8542.32.00.51 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | AT28HC256 | 5V | Parallel, SPI | 256Kb 32K x 8 | 80mA | 90ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 24LC16BT-M/SN | Microchip Technology | Datasheet | 37 | - | Min: 1 Mult: 1 | 6 Weeks | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -55°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | Active | 1 (Unlimited) | 8 | 3A001.A.2.C | Matte Tin (Sn) - annealed | 8542.32.00.51 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24LC16B | 8 | R-PDSO-G8 | Not Qualified | 5.5V | 3/5V | 2.5V | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 0.000001A | 16384 bit | SERIAL | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010E-15LM/883 | Microchip Technology | Datasheet | - | - | Min: 1 Mult: 1 | Lead, Tin | Surface Mount | Surface Mount | 44-CLCC | 44 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1998 | e0 | Active | 1 (Unlimited) | 44 | 3A001.A.2.C | TIN LEAD | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 8542.32.00.51 | 4.5V~5.5V | QUAD | NOT SPECIFIED | 1 | 5V | 1.27mm | not_compliant | 150GHz | NOT SPECIFIED | AT28C010 | Not Qualified | 5V | 5V | 1Mb 128K x 8 | 80mA | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 128KX8 | 3-STATE | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | NO | 128words | 2.74mm | 16.55mm | 16.55mm | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC256F-12DM/883 | Microchip Technology | Datasheet | 1656 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 28-CDIP (0.600, 15.24mm) | 28 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | e0 | Active | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN LEAD | AUTOMATIC WRITE | 8542.32.00.51 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 120GHz | AT28HC256 | 5V | Parallel, SPI | 256Kb 32K x 8 | 80mA | 120ns | EEPROM | Parallel | 32KX8 | 8 | 3ms | 256 kb | MIL-STD-883 Class C | 5V | 3ms | 5.72mm | 37.215mm | 15.24mm | No | ROHS3 Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC256-12DM/883 | Microchip Technology | Datasheet | 1842 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1997 | e0 | Active | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN/LEAD (SN/PB) | AUTOMATIC WRITE | 8542.32.00.51 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | NOT SPECIFIED | AT28HC256 | R-GDIP-T28 | Not Qualified | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No AS5SP512K36DQ-40XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | 30 Weeks | YES | 100 | 4 ns | 133 MHz | MICROSS COMPONENTS | Micross Components | AS5SP512K36DQ-40XT | 3 | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.6 | 3.3 V | e3 | Yes | 3A001.A.2.C | MATTE TIN | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | 2.5/3.3,3.3 V | MILITARY | 3.135 V | SYNCHRONOUS | 0.375 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.165 A | 18 | PARALLEL | COMMON | CACHE SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8874001LA | Renesas Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 24-CDIP (0.300", 7.62mm) | NO | 24-CDIP | 24 | 35 ns | 5962-8874001 | Texas INC | Texas | 5962-8874001LA | Volatile | Renesas Electronics America Inc | 2048 words | 2000 | 125 °C | -55 °C | Tube | CERAMIC, GLASS-SEALED | DIP | CERAMIC, DIP-24 | RECTANGULAR | IN-LINE | Obsolete | DIP | Last Time Buy | 5.26 | 5 V | -55°C ~ 125°C (TA) | - | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | unknown | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 16Kbit | ASYNCHRONOUS | 35 ns | SRAM | Parallel | 2KX8 | 8 | 35ns | 16384 bit | PARALLEL | STANDARD SRAM | 2K x 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 8403609LA | Renesas Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 24-CDIP (0.300", 7.62mm) | NO | 24-CDIP | 24 | 45 ns | 840360 | Renesas Electronics | 15 | TELEDYNE E2V (UK) LTD | Parallel | Renesas Electronics | 8403609LA | + 125 C | Volatile | Renesas Electronics America Inc | - 55 C | Through Hole | 2048 words | 2000 | 125 °C | -55 °C | Tube | CERAMIC, GLASS-SEALED | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Active | DIP | Last Time Buy | 5.27 | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | 5 V | Military grade | -55°C ~ 125°C (TA) | Tube | - | 3A001.A.2.C | Asynchronous | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 16Kbit | 1 | ASYNCHRONOUS | 95 mA | 45 ns | SRAM | Parallel | 2 k x 8 | 3-STATE | 8 | 45ns | SRAM | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | SRAM | 2K x 8 | 3.56 mm | 32.51 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010E-15DM/883 | Microchip Technology | Datasheet | 741 | - | Min: 1 Mult: 1 | 23 Weeks | Through Hole | Through Hole | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | Active | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 150GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 150ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 Class C | 5V | 100000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | YES | NO | 128words | 5.72mm | 42.2mm | 15.24mm | No | Non-RoHS Compliant | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8855206UA | Renesas Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.300", 7.62mm) | NO | 28-CDIP | 28 | 25 ns | 5962-8855206 | Renesas Electronics | 13 | TELEDYNE E2V (UK) LTD | Parallel | Renesas Electronics | 5962-8855206UA | + 125 C | Volatile | Renesas Electronics America Inc | - 55 C | Through Hole | 32768 words | 32000 | 125 °C | -55 °C | Tube | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | Active | 1.16 | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | 5 V | 1.203871 oz | Military grade | -55°C ~ 125°C (TA) | Tube | - | e0 | 3A001.A.2.C | Asynchronous | TIN LEAD | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 28 | R-GDIP-T28 | Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 256Kbit | ASYNCHRONOUS | 155 mA | 25 ns | SRAM | Parallel | 32 k x 8 | 3-STATE | 8 | 25ns | SRAM | 0.0008 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | SRAM | 32K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK14C88-5L45M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 16 Weeks | Surface Mount | Surface Mount | 32-LCC (J-Lead) | 32 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | no | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 70mA | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.003A | MIL-STD-883 | 45 ns | 8b | 2.286mm | 13.97mm | No | Non-RoHS Compliant | Contains Lead |
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24LC16B-M/SN
Microchip Technology
Package:Memory
Price: please inquire
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AT28HC256-90DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010-12DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010E-12DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010-25DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010-12LM/883
Microchip Technology
Package:Memory
Price: please inquire
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25LC640AT-M/SN
Microchip Technology
Package:Memory
14.119610
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AT28C010-20DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010-15DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28HC256E-90DM/883
Microchip Technology
Package:Memory
Price: please inquire
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24LC16BT-M/SN
Microchip Technology
Package:Memory
Price: please inquire
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AT28C010E-15LM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28HC256F-12DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AT28HC256-12DM/883
Microchip Technology
Package:Memory
Price: please inquire
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AS5SP512K36DQ-40XT
Micross
Package:Memory
Price: please inquire
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5962-8874001LA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
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8403609LA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
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AT28C010E-15DM/883
Microchip Technology
Package:Memory
Price: please inquire
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5962-8855206UA
Renesas Electronics America Inc
Package:Memory
Price: please inquire
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STK14C88-5L45M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire