The category is 'Memory'
Memory (403)
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- ECCN Code:
3A001.A.2.C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Mounting Feature | Shell Material | Supplier Device Package | Number of Terminals | Access Time-Max | Address Bus | Base Product Number | Clock Freq | Contact Finish Mating | Contact Materials | Current - Continuous Drain (Id) @ 25℃ | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Supply Voltage (Max) | Operating Supply Voltage (Min) | Operating Supply Voltage (Typ) | Operating Temp Range | Operating Temperature Classification | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Primary Material | Product Status | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Shipping Restrictions | Special Features | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom | Supply Voltage-Nom (Vsup) | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | JESD-609 Code | Pbfree Code | Part Status | Termination | ECCN Code | Connector Type | Type | Terminal Finish | Color | Additional Feature | HTS Code | Fastening Type | Subcategory | Technology | Voltage - Supply | Terminal Position | Orientation | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Shell Finish | Pin Count | Shell Size - Insert | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Memory Size | Number of Ports | Operating Mode | uPs/uCs/Peripheral ICs Type | Clock Frequency | Supply Current-Max | Power - Max | Access Time | Memory Format | Memory Interface | Architecture | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Organization | Output Characteristics | Seated Height-Max | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Memory Width | Drain to Source Voltage (Vdss) | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Coil Voltage | Memory Density | Boundary Scan | Low Power Mode | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | FET Feature | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Reverse Pinout | Supply Current | Number of Banks | Memory Organization | Length | Width |
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 | Mfr Part No CY7C1441KV33-133AXM | Infineon Technologies | Datasheet | 1686 | - | Min: 1 Mult: 1 | Surface Mount | TQFP-100 | YES | 100-TQFP (14x20) | 100 | 6.5 ns | CY7C1441 | 72 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1441KV33-133AXM | 133 MHz | + 125 C | Volatile | Infineon Technologies | - 55 C | Yes | SMD/SMT | 1048576 words | 1000000 | 125 °C | -55 °C | Tray | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | Active | 2.31 | Details | Yes | This product may require additional documentation to export from the United States. | 3.6 V | 3.135 V | 3.3 V | 0.287637 oz | -55°C ~ 125°C (TC) | Tray | - | 3A001.A.2.C | Synchronous | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, SDR | 3.135V ~ 3.6V | QUAD | GULL WING | 1 | 0.65 mm | compliant | R-PQFP-G100 | 3.6 V | MILITARY | 3.135 V | 36 Mbit | SYNCHRONOUS | 133 MHz | 170 mA | 6.5 ns | SRAM | Parallel | 1 M x 36 | 1.6 mm | 36 | - | 37748736 bit | PARALLEL | CACHE SRAM | 1M x 36 | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8751410XA | Atmel (Microchip Technology) | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | ATMEL CORP | 5962-8751410XA | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 8.63 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) - hot dipped | HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 8KX8 | 3-STATE | 5.72 mm | 8 | 0.00025 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 2 ms | 10 | YES | YES | NO | 32 words | 37.25 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8751408XA | Atmel (Microchip Technology) | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 250 ns | TELEDYNE E2V (UK) LTD | 5962-8751408XA | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | 5.7 | 5 V | Military grade | e0 | 3A001.A.2.C | TIN LEAD | HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 8KX8 | 5.72 mm | 8 | 0.00025 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 2 ms | 10 | YES | YES | NO | 32 words | 37.25 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-15FM | Atmel (Microchip Technology) | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 150 ns | ATMEL CORP | AT28C010-15FM | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, FL32,.5 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | DFP | 30 | 8.55 | No | 5 V | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | PAGE WRITE | 8542.32.00.51 | DUAL | FLAT | 240 | 1 | 1.27 mm | compliant | 32 | R-CDFP-F32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 128KX8 | 3-STATE | 3.05 mm | 8 | 0.0003 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 128 words | 20.8 mm | 12.15 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MF28F010-12 | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | INTEL CORP | MF28F010-12 | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, FL32,.4 | FL32,.4 | RECTANGULAR | FLATPACK | Obsolete | DFP | NOT SPECIFIED | 5.52 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | FLAT | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-CDFP-F32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 128KX8 | 3-STATE | 3.05 mm | 8 | 0.0001 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | FLASH | 12 V | 10000 Write/Erase Cycles | NO | NO | YES | 20.825 mm | 10.415 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM2964BDMB | AMD | Datasheet | - | - | Min: 1 Mult: 1 | NO | 40 | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | AM2964BDMB | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, | RECTANGULAR | IN-LINE | Active | 5.59 | Non-Compliant | 5.5 V | 4.5 V | 5 V | 3A001.A.2.C | 8542.31.00.01 | BIPOLAR | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-CDIP-T40 | MILITARY | MEMORY CONTROLLER, DRAM | 5.715 mm | 16 | NO | NO | 4 | 176K X 8 | 52.324 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8969002YA | E2V | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 20 ns | 11(b) | Not Required(MHz) | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8969002YA | Surface Mount | 8 | 2K | 2000 | 5.5(V) | 4.5(V) | 5(V) | -55C to 125C | Military | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC24,.3X.4 | LCC24,.3X.4 | RECTANGULAR | CHIP CARRIER | LCC | Obsolete | No | 5.28 | 5 V | Military grade | e0 | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 1 | 1.27 mm | compliant | 24 | R-CQCC-N24 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.15 mA | 20 | Not Required | 2KX8 | 3-STATE | 1.9812 mm | 8 | 16384(Bit) | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | Asynchronous | 8(b) | STANDARD SRAM | 4.5 V | 150 | 10.16 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 8413205RA | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 35 ns | INTEL CORP | Intel Corporation | 8413205RA | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, | RECTANGULAR | IN-LINE | Obsolete | DIP | 7.83 | Compact, space saving design | 5 V | 3A001.A.2.C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 20 | R-GDIP-T20 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 16KX1 | 5.08 mm | 1 | Non-Reversing | 24V AC | 16384 bit | PARALLEL | STANDARD SRAM | 24.13 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM16518883 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | NO | 18 | 250 ns | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | HM1-6518/883 | PEI-Genesis | 1024 words | 1000 | 125 °C | -55 °C | Bulk | CERAMIC, GLASS-SEALED | DIP | DIP, | RECTANGULAR | IN-LINE | Active | Active | 5.8 | Non-Compliant | 8542320040 | 5 V | * | 3A001.A.2.C | ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | CMOS | DUAL | THROUGH-HOLE | 1 | unknown | R-GDIP-T18 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 1KX1 | 1 | 1024 bit | PARALLEL | STANDARD SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C199-45LMB | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | Panel mounting hole | YES | 28 | 45 ns | CYPRESS SEMICONDUCTOR CORP | ECE/EXCEL CELL ELECTRONIC CORP | CY7C199-45LMB | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-28 | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QLCC | 30 | 5.47 | No | 5 V | Military grade | Packed by set, 10 sets per box | Compact Size, NO - 1, NC - 1 | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 240 | 1 | 1.27 mm | not_compliant | 28 | R-CQCC-N28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 220V AC | 1 | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 1.905 mm | 8 | 0.015 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 13.97 mm | 8.89 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F040B-55EE | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | SPANSION INC | Spansion | AM29F040B-55EE | 3 | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | TSSOP | MO-142BD, TSOP-32 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP1 | 30 | 5.19 | No | 5 V | e0 | No | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 240 | 1 | 0.5 mm | not_compliant | 32 | R-PDSO-G32 | Not Qualified | 5.25 V | 5 V | MILITARY | 4.75 V | ASYNCHRONOUS | 0.04 mA | 512KX8 | 1.2 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 18.4 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F800BT90SE | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 90 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F800BT-90SE | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | NOT SPECIFIED | 5.22 | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX16 | 3-STATE | 2.8 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | 28.2 mm | 13.3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F400BB-70FE | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | ADVANCED MICRO DEVICES INC | AMD | AM29F400BB-70FE | 262144 words | 256000 | 125 °C | -55 °C | PLASTIC/EPOXY | TSOP1-R | TSOP1-R, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | TSOP1 | 5.11 | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | 20 | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS5LC512K8DJ-20L/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 20 ns | MICROSS COMPONENTS | IDEC | LB8K-2SB-5H | 524288 words | 512000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOJ | PLASTIC, PSOJ-36 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5.41 | 3.3 V | 3A001.A.2.C | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 1 | 1.27 mm | compliant | 36 | R-PDSO-J36 | Not Qualified | 3.6 V | 3.3 V | MILITARY | 3 V | ASYNCHRONOUS | 0.04 mA | 512KX8 | 3-STATE | 3.79 mm | 8 | 0.0065 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 23.72 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AM29F100B120SE | AMD | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 120 ns | ADVANCED MICRO DEVICES INC | Toshiba | AM29F100B-120SE | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | SOP | SOP, SOP44,.63 | SOP44,.63 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | NOT SPECIFIED | 5.88 | Non-Compliant | No | 5 V | e0 | 3A001.A.2.C | NOR TYPE | Tin/Lead (Sn/Pb) | 100K PROGRAM/ERASE CYCLES MIN ;CAN BE CONFG AS 64K X 16; BOTTOM BOOT BLOCK | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 128KX8 | 3-STATE | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,1 | 16K,8K,32K,64K | YES | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C148-35LMB | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | Panel Mount, Through Hole | YES | Flange | Aluminum | 18 | 35 ns | Gold | Copper Alloy | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C148-35LMB | Glenair | 1024 words | 1000 | 125 °C | -55 °C | Retail Package | UNSPECIFIED | QCCN | QCCN, LCC18,.3X.43 | LCC18,.3X.43 | RECTANGULAR | CHIP CARRIER | Obsolete | LCC | Metal | Active | NOT SPECIFIED | 5.57 | Non-Compliant | No | 5 V | Military grade | -65°C ~ 175°C | 806 | e0 | Solder | 3A001.A.2.C | Plug, Male Pins | Tin/Lead (Sn/Pb) | Silver | AUTOMATIC POWER-DOWN | 8542.32.00.41 | Threaded | SRAMs | CMOS | QUAD | B | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | not_compliant | Electroless Nickel | 18 | 38-21 | R-XQCC-N18 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.11 mA | 1KX4 | 3-STATE | 1.905 mm | 4 | 0.01 A | 4096 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | NO | 10.795 mm | 7.366 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1008ECA-70/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8-SOIC | 32 | 45 ns | 7.6A | MICROSS COMPONENTS | Micross Components | MT5C1008ECA-70/XT | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | End Of Life | QFJ | NOT SPECIFIED | 5.02 | No | 5 V | -55°C ~ 150°C (TJ) | Tape & Reel (TR) | -- | e0 | No | Active | 3A001.A.2.C | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.125 mA | 2W | 2 N-Channel (Dual) | 23 mOhm @ 7.6A, 10V | 1.1V @ 250µA | 128KX8 | 3-STATE | 3.048 mm | 630pF @ 15V | 12.5nC @ 10V | 8 | 20V | 0.01 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | Logic Level Gate | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No W78M32VP-110BM | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 159 | 110 ns | MERCURY SYSTEMS INC | Mercury Systems Inc | W78M32VP-110BM | 8388608 words | 8000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Obsolete | NOT SPECIFIED | 5.63 | No | 3.3 V | 3A001.A.2.C | 8542.32.00.51 | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | R-PBGA-B159 | Not Qualified | 3.6 V | MILITARY | 3 V | ASYNCHRONOUS | 8MX32 | 32 | 268435456 bit | PARALLEL | FLASH | 3.3 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK14C88-5C45M | Simtek Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 45 ns | SIMTEK CORP | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, CERAMIC, DIP-32 | DIP28,.3 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | unknown | R-CDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.085 mA | 32KX8 | 3-STATE | 4.12 mm | 8 | 0.003 A | 262144 bit | PARALLEL | COMMON | NON-VOLATILE SRAM | 4.5 V | YES | 40.635 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No SMJ27C512-15JM | Texas Instruments | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | TEXAS INSTRUMENTS INC | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | DIP | No | 5 V | 3A001.A.2.C | 8542.32.00.61 | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | not_compliant | NOT SPECIFIED | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3-STATE | 5.16 mm | 8 | 0.000325 A | 524288 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 36.83 mm | 15.24 mm |
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