The category is 'Memory'
Memory (403)
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- ECCN Code
- Terminal Position
- Memory Width
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- HTS Code
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- ECCN Code:
3A001.A.2.C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Length | Width |
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 | Mfr Part No XC17256EDD8B | AMD Xilinx | Datasheet | 8 | - | Min: 1 Mult: 1 | NO | 8 | 12.5 MHz | XILINX INC | 262144 words | 256000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | CERAMIC, DIP-8 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 8 | R-CDIP-T8 | Not Qualified | 5.5 V | MILITARY | 4.5 V | SYNCHRONOUS | 0.01 mA | 256KX1 | 3-STATE | 5.08 mm | 1 | 0.00005 A | 262144 bit | 38535Q/M;38534H;883B | SERIAL | COMMON | CONFIGURATION MEMORY | 10.16 mm | 7.62 mm | |||||||||||||||||||
 | Mfr Part No X25C02PM | IC Microsystems Sdn Bhd | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | 1 MHz | IC MICROSYSTEMS SDN BHD | 3 | 256 words | 256 | 125 °C | -55 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.51 | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | unknown | 8 | R-PDIP-T8 | Not Qualified | 5.5 V | MILITARY | 4.5 V | SYNCHRONOUS | 0.002 mA | 256X8 | 4.32 mm | 8 | 0.00015 A | 2048 bit | SERIAL | EEPROM | SPI | 100000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | 10.03 mm | 7.62 mm | ||||||||||||||||
 | Mfr Part No AS27C512-25ECAM | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | MICROSS COMPONENTS | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | WQCCN | 0.450 X 0.550 INCH, WINDOWED, CERAMIC, LCC-32 | RECTANGULAR | CHIP CARRIER, WINDOW | Active | QFJ | 5 V | e4 | 3A001.A.2.C | PALLADIUM GOLD | 8542.32.00.61 | QUAD | NO LEAD | 1 | 1.27 mm | compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3.048 mm | 8 | 524288 bit | PARALLEL | UVPROM | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||
| Mfr Part No AT27C256R-70LM | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | ATMEL CORP | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | WQCCN | WQCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER, WINDOW | Obsolete | QFJ | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.61 | QUAD | NO LEAD | 1 | 1.27 mm | unknown | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.025 mA | 32KX8 | 3-STATE | 2.92 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | UVPROM | 13 V | 13.97 mm | 11.43 mm | |||||||||||||||||||
 | Mfr Part No AM2167-70/BRA | AMD | Datasheet | 312 | - | Min: 1 Mult: 1 | NO | 20 | 70 ns | ADVANCED MICRO DEVICES INC | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP20,.3 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 20 | R-GDIP-T20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 16KX1 | 3-STATE | 5.08 mm | 1 | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | SEPARATE | STANDARD SRAM | NO | 24.257 mm | 7.62 mm | |||||||||||||||||
| Mfr Part No 5962-8606306YC | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | STMICROELECTRONICS | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | WINDOWED, CERAMIC, LCC-32 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | No | 5 V | e4 | 3A001.A.2.C | GOLD | 8542.32.00.61 | QUAD | NO LEAD | 1 | 1.27 mm | unknown | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.065 mA | 32KX8 | 3-STATE | 3.3 mm | 8 | 0.0003 A | 262144 bit | MIL-STD-883 | PARALLEL | COMMON | UVPROM | 12.5 V | 13.97 mm | 11.43 mm | |||||||||||||||||||
 | Mfr Part No IDT7187L25DB | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 25 ns | INTEGRATED DEVICE TECHNOLOGY INC | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERAMIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 22 | R-GDIP-T22 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.11 mA | 64KX1 | 3-STATE | 5.08 mm | 1 | 0.0006 A | 65536 bit | MIL-STD-883 Class B | PARALLEL | SEPARATE | STANDARD SRAM | 2 V | NO | 27.051 mm | 7.62 mm | |||||||||||||||||
 | Mfr Part No 5962-3826707MZA | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | MICROSS COMPONENTS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, FL32,.5 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | DFP | No | 5 V | e0 | 3A001.A.2.C | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | FLAT | NOT SPECIFIED | 1 | 1.27 mm | compliant | NOT SPECIFIED | 32 | R-XDFP-F32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.1 mA | 128KX8 | 3.048 mm | 8 | 0.00085 A | 1048576 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 128 words | 20.85 mm | 11.6586 mm | |||||||||||||
| Mfr Part No 5962-3826707MZA | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 120 ns | ATMEL CORP | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | DFP | FP-32 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | DFP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | AUTOMATIC WRITE | 8542.32.00.51 | DUAL | FLAT | 1 | 1.27 mm | compliant | 32 | R-XDFP-F32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.1 mA | 128KX8 | 3-STATE | 3.048 mm | 8 | 0.00085 A | 1048576 bit | MIL-STD-883 | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 128 words | 20.85 mm | 11.6586 mm | ||||||||||||
| Mfr Part No CY7C256-45WMB | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 45 ns | CYPRESS SEMICONDUCTOR CORP | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.600 INCH, WINDOWED, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | POWER SWITCHED PROM | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 32KX8 | 3-STATE | 8 | 0.02 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 12.5 V | ||||||||||||||||||||
| Mfr Part No MT5C1008EC-25/883C | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 25 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC | SON | SOLCC32,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | NO LEAD | 1.27 mm | not_compliant | R-XDSO-N32 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 8 | 0.01 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||
 | Mfr Part No MT5C1008EC-25/883C | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 25 ns | MICROSS COMPONENTS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | SON | SON, SOLCC32,.4 | SOLCC32,.4 | RECTANGULAR | SMALL OUTLINE | End Of Life | DLCC | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | DUAL | NO LEAD | 1 | 1.27 mm | compliant | 32 | R-CDSO-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.14 mA | 128KX8 | 3-STATE | 2.54 mm | 8 | 0.01 A | 1048576 bit | MIL-STD-883 Class C | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 20.828 mm | 10.16 mm | |||||||||||||||||
| Mfr Part No AT27C512-20DM/883 | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | ATMEL CORP | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-XDIP-T28 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.05 mA | 64KX8 | 3-STATE | 8 | 0.0002 A | 524288 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | |||||||||||||||||||||||||||
 | Mfr Part No MT5C2565EC-25L/883C | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 25 ns | MICROSS COMPONENTS | 65536 words | 64000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | CERAMIC, LCC-28 | RECTANGULAR | CHIP CARRIER | Active | QLCC | 5 V | 3A001.A.2.C | 8542.32.00.41 | QUAD | NO LEAD | 1 | 1.27 mm | compliant | 28 | R-CQCC-N28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 64KX4 | 3.048 mm | 4 | 262144 bit | MIL-STD-883 | PARALLEL | STANDARD SRAM | 13.97 mm | 8.89 mm | ||||||||||||||||||||||||||||
| Mfr Part No PDM41024L55L32B | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | PARADIGM TECHNOLOGY INC | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | NO LEAD | 1.27 mm | unknown | R-XQCC-N32 | Not Qualified | MILITARY | ASYNCHRONOUS | 0.18 mA | 128KX8 | 3-STATE | 8 | 0.0005 A | 1048576 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||
| Mfr Part No X28C64EMB-20 | Intersil Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | INTERSIL CORP | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | PAGE WRITE | 8542.32.00.51 | QUAD | NO LEAD | 1 | 1.27 mm | unknown | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.06 mA | 8KX8 | 3-STATE | 3.048 mm | 8 | 0.0002 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 10 ms | YES | YES | NO | 64 words | 13.97 mm | 11.43 mm | ||||||||||||||
 | Mfr Part No AS5C512K8F-20 | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 20 ns | MICROSS COMPONENTS | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, | RECTANGULAR | FLATPACK | Active | DFP | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | FLAT | 1 | 1.27 mm | compliant | 36 | R-CDFP-F36 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.09 mA | 512KX8 | 3.175 mm | 8 | 4194304 bit | MIL-STD-883 | PARALLEL | STANDARD SRAM | 23.368 mm | 12.954 mm | |||||||||||||||||||||||
 | Mfr Part No AS5C512K8ECJ-45L | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 45 ns | MICROSS COMPONENTS | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | SOJ | SOJ, | RECTANGULAR | SMALL OUTLINE | Active | SOJ | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | 36 | R-CDSO-J36 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.07 mA | 512KX8 | 4.064 mm | 8 | 4194304 bit | MIL-STD-883 | PARALLEL | STANDARD SRAM | 23.4823 mm | 11.3538 mm | |||||||||||||||||||||||
| Mfr Part No AS27C256-17ECAM | Micross Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 170 ns | MICROSS COMPONENTS | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | 0.450 X 0.550 INCH, CERAMIC, LCC-32 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Active | QFJ | 5 V | e4 | 3A001.A.2.C | PALLADIUM GOLD | 8542.32.00.61 | QUAD | NO LEAD | 1 | 1.27 mm | compliant | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.025 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.0003 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | UVPROM | 12.5 V | 13.97 mm | 11.43 mm | ||||||||||||||||||||
| Mfr Part No 27C256/BXA-20 | Philips Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | PHILIPS SEMICONDUCTORS | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 8542.32.00.61 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T28 | Not Qualified | MILITARY | 0.03 mA | 32KX8 | 3-STATE | 8 | 0.0001 A | 262144 bit | 38535Q/M;38534H;883B | COMMON | 12.5 V |
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XC17256EDD8B
AMD Xilinx
Package:Memory
Price: please inquire
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X25C02PM
IC Microsystems Sdn Bhd
Package:Memory
Price: please inquire
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AS27C512-25ECAM
Micross Components
Package:Memory
Price: please inquire
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AT27C256R-70LM
Atmel Corporation
Package:Memory
Price: please inquire
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AM2167-70/BRA
AMD
Package:Memory
Price: please inquire
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5962-8606306YC
STMicroelectronics
Package:Memory
Price: please inquire
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IDT7187L25DB
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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5962-3826707MZA
Micross Components
Package:Memory
Price: please inquire
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5962-3826707MZA
Atmel Corporation
Package:Memory
Price: please inquire
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CY7C256-45WMB
Cypress Semiconductor
Package:Memory
Price: please inquire
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MT5C1008EC-25/883C
Micron Technology Inc
Package:Memory
Price: please inquire
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MT5C1008EC-25/883C
Micross Components
Package:Memory
Price: please inquire
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AT27C512-20DM/883
Atmel Corporation
Package:Memory
Price: please inquire
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MT5C2565EC-25L/883C
Micross Components
Package:Memory
Price: please inquire
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PDM41024L55L32B
Paradigm Technology Inc
Package:Memory
Price: please inquire
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X28C64EMB-20
Intersil Corporation
Package:Memory
Price: please inquire
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AS5C512K8F-20
Micross Components
Package:Memory
Price: please inquire
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AS5C512K8ECJ-45L
Micross Components
Package:Memory
Price: please inquire
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AS27C256-17ECAM
Micross Components
Package:Memory
Price: please inquire
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27C256/BXA-20
Philips Semiconductors
Package:Memory
Price: please inquire