The category is 'Memory'
Memory (403)
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- ECCN Code:
3A001.A.2.C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Clock Frequency-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Outputs | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Propagation Delay | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Number of Inputs | Organization | Output Characteristics | Seated Height-Max | Memory Width | Programmable Logic Type | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Memory IC Type | Output Function | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Standby Voltage-Min | Data Polling | Number of Dedicated Inputs | Toggle Bit | Command User Interface | Output Enable | Page Size | Ready/Busy | Number of Product Terms | Memory Organization | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status |
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 | Mfr Part No STK10C68-5C45M | Cypress Semiconductor Corp | Datasheet | 415 |
| Min: 1 Mult: 1 | NO | Non-Volatile | -55°C~125°C TA | Tube | Obsolete | 1 (Unlimited) | 28 | 3A001.A.2.C | RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL | 8542.32.00.41 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | unknown | 28 | R-CDIP-T28 | Not Qualified | 5.5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | SRAM | Parallel | 8KX8 | 8 | 45ns | 65536 bit | 45 ns | 4.14mm | 35.56mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC256-12DM/883 | Adesto Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 18 Weeks | NO | 28 | 120 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28HC256-12DM/883 | 1 | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP-28 | RECTANGULAR | IN-LINE | Active | NOT SPECIFIED | 5.42 | 5 V | Military grade | e0 | 3A001.A.2.C | TIN/LEAD (SN/PB) | AUTOMATIC WRITE | 8542.32.00.51 | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 32KX8 | 5.72 mm | 8 | 262144 bit | MIL-STD-883 Class C | PARALLEL | EEPROM | 5 V | 10 ms | 37.215 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC64B12DM883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 120 ns | ATMEL CORP | Atmel Corporation | AT28HC64B-12DM/883 | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.600 INCH, CERDIP-28 | RECTANGULAR | IN-LINE | Obsolete | DIP | 5.73 | 5 V | 3A001.A.2.C | HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS | 8542.32.00.51 | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 8KX8 | 3-STATE | 5.72 mm | 8 | 65536 bit | PARALLEL | EEPROM | 5 V | 10 | 37.25 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C128A-55DMB | Cypress Semiconductor | Datasheet | 1 | - | Min: 1 Mult: 1 | NO | 24 | 55 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CY7C128A-55DMB | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | 8.51 | No | 5 V | Military grade | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.1 mA | 2KX8 | 3-STATE | 5.08 mm | 8 | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 31.877 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-12DM/883 | Adesto Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 14 Weeks | NO | 32 | 120 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28C010-12DM/883 | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, | RECTANGULAR | IN-LINE | Active | 4.99 | 5 V | Military grade | 3A001.A.2.C | 8542.32.00.51 | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-GDIP-T32 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 128KX8 | 5.72 mm | 8 | 1048576 bit | MIL-STD-883 Class C | PARALLEL | EEPROM | 5 V | 10 ms | 42.2 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HM1-6551B/883 | Intersil | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 220 ns | HARRIS SEMICONDUCTOR | Harris Semiconductor | HM1-6551B/883 | 256 words | 256 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP22,.4 | DIP22,.4 | RECTANGULAR | IN-LINE | Transferred | 8.7 | No | 5 V | Military grade | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | ADDRESS LATCH | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-GDIP-T22 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.0072 mA | 256X4 | 3-STATE | 4 | 0.00001 A | 1024 bit | 38535Q/M;38534H;883B | PARALLEL | STANDARD SRAM | 2 V | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT22V10-15DM883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 50 MHz | ATMEL CORP | Atmel Corporation | AT22V10-15DM/883 | 10 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | WDIP | 0.300 INCH, WINDOWED, CERDIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | NOT SPECIFIED | 5.32 | Non-Compliant | No | 5.5 V | 4.5 V | 5 V | Military grade | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 10 MACROCELLS; 1 EXTERNAL CLOCK; SHARED INPUT/CLOCK; VARIABLE PRODUCT TERMS | 8542.39.00.01 | Programmable Logic Devices | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 2.54 mm | unknown | 24 | R-GDIP-T24 | 10 | Not Qualified | 5 V | MILITARY | 15 ns | PAL-TYPE | 22 | 11 DEDICATED INPUTS, 10 I/O | 5.08 mm | UV PLD | 38535Q/M;38534H;883B | MACROCELL | 11 | 132 | 32 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 8403606JA | Intersil | Datasheet | 44 | - | Min: 1 Mult: 1 | Through Hole | 24-CDIP (0.600, 15.24mm) | NO | 24-CERDIP | 24 | 70 ns | INTERSIL CORP | Intersil Corporation | 8403606JA | Volatile | Intersil | 2048 words | 2000 | 125 °C | -55 °C | Bulk | CERAMIC, GLASS-SEALED | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Transferred | DIP | Active | NOT APPLICABLE | 5.25 | Compliant | No | 5 V | Military grade | -55°C ~ 125°C (TA) | Bulk | - | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) - hot dipped | 125 °C | -55 °C | 8542.32.00.41 | SRAMs | SRAM - Asynchronous | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | NOT APPLICABLE | 1 | 2.54 mm | not_compliant | 24 | R-GDIP-T24 | Qualified | 5 V | 5.5 V | 5 V | MILITARY | 4.5 V | 16Kbit | 1 | ASYNCHRONOUS | 0.07 mA | 70 ns | SRAM | Parallel | 2KX8 | 3-STATE | 5.72 mm | 8 | 70ns | 11 b | 16 kb | 0.000025 A | 16384 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 2 V | 2K x 8 | 15.24 mm | No | ||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK12C68-5K35M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.300, 7.62mm) | NO | Non-Volatile | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | TIN LEAD | RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | NOT SPECIFIED | STK12C68 | 28 | R-CDIP-T28 | Not Qualified | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 0.085mA | NVSRAM | Parallel | 8KX8 | 8 | 35ns | 0.004A | 65536 bit | 35 ns | 4.14mm | 35.56mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK11C68-5K55M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.300, 7.62mm) | NO | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | TIN LEAD | EEPROM SOFTWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | NOT SPECIFIED | STK11C68 | 28 | R-CDIP-T28 | Not Qualified | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 0.08mA | NVSRAM | Parallel | 8KX8 | 8 | 55ns | 0.002A | 65536 bit | 38535Q/M;38534H;883B | 55 ns | 4.11mm | 35.56mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C64E-15DM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | ATMEL CORP | Atmel Corporation | AT28C64E-15DM/883 | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.8 | Non-Compliant | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.045 mA | 8KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 0.2 ms | 10 | YES | NO | NO | YES | 37.25 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8852506ZA | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 150 ns | DEFENSE SUPPLY CENTER COLUMBUS | Defense Supply Center Columbus | 5962-8852506ZA | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | DFP, | FLATPACK | Obsolete | DFP | 5.82 | 5 V | e0 | 3A001.A.2.C | TIN LEAD | 8542.32.00.51 | CMOS | DUAL | FLAT | 1 | unknown | 28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 32KX8 | 8 | 262144 bit | PARALLEL | EEPROM | 5 V | 10 ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C010-20UM | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 30 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C010-20UM | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA, PGA30,5X6 | PGA30,5X6 | RECTANGULAR | GRID ARRAY | Obsolete | PGA | NOT SPECIFIED | 8.52 | Non-Compliant | No | 5 V | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | PAGE WRITE | 8542.32.00.51 | EEPROMs | CMOS | PERPENDICULAR | PIN/PEG | NOT SPECIFIED | 1 | 2.54 mm | compliant | 30 | R-CPGA-P30 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 128KX8 | 3-STATE | 4.4 mm | 8 | 0.0003 A | 1048576 bit | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 10 ms | YES | YES | NO | 128 words | 16.5 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C64E-25LM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 250 ns | ATMEL CORP | Atmel Corporation | AT28C64E-25LM/883 | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | NOT SPECIFIED | 8.7 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | QUAD | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | 32 | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.045 mA | 8KX8 | 3-STATE | 2.54 mm | 8 | 0.0001 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 0.2 ms | 10 | YES | NO | NO | YES | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-9459901MXC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 55 ns | SIMTEK CORP | Simtek Corporation | 5962-9459901MXC | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Transferred | NOT SPECIFIED | 5.85 | No | 5 V | Military grade | e0 | 3A001.A.2.C | Tin/Lead (Sn85Pb15) | EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | R-CDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.075 mA | 8KX8 | 3-STATE | 4.14 mm | 8 | 0.004 A | 65536 bit | MIL-STD-883 | PARALLEL | NON-VOLATILE SRAM | YES | 35.56 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK11C68-5K35M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 28-CDIP (0.300, 7.62mm) | NO | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | TIN LEAD | EEPROM SOFTWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | NOT SPECIFIED | STK11C68 | 28 | R-CDIP-T28 | Not Qualified | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 0.09mA | NVSRAM | Parallel | 8KX8 | 8 | 35ns | 0.002A | 65536 bit | 38535Q/M;38534H;883B | 35 ns | 4.11mm | 35.56mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28C17E-20DM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 200 ns | ATMEL CORP | Atmel Corporation | AT28C17E-20DM/883 | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 8.33 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.045 mA | 2KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 0.2 ms | 10 | YES | NO | NO | YES | 37.25 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC16-90DM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 90 ns | ATMEL CORP | Atmel Corporation | AT28HC16-90DM/883 | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.89 | Non-Compliant | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 24 | R-GDIP-T24 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 2KX8 | 3-STATE | 5.72 mm | 8 | 0.06 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 1 ms | YES | NO | NO | 32.15 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS5SP128K36DQ-6/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | 3.5 ns | MICROSS COMPONENTS | Micross Components | AS5SP128K36DQ-6/XT | 131072 words | 128000 | 125 °C | -55 °C | LQFP | LQFP, | Active | QFP | 5.73 | Compliant | 3.3 V | 3A001.A.2.C | 125 °C | -55 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | CMOS | 1 | 0.65 mm | compliant | 100 | 3.3 V | 3.63 V | MILITARY | 3.135 V | 4 | SYNCHRONOUS | 128KX36 | 1.4 mm | 36 | 17 b | 4.5 Mb | 4.5 | PARALLEL | CACHE SRAM | 20 mm | 14 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C198-35DMB | Rochester Electronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 35 ns | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | CY7C198-35DMB | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, | RECTANGULAR | IN-LINE | Active | 5.74 | 5 V | 3A001.A.2.C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | CMOS | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-CDIP-T28 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 32KX8 | 5.715 mm | 8 | 262144 bit | PARALLEL | STANDARD SRAM | 37.338 mm | 15.24 mm |
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STK10C68-5C45M
Cypress Semiconductor Corp
Package:Memory
1,167.589968
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AT28HC256-12DM/883
Adesto Technologies
Package:Memory
Price: please inquire
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AT28HC64B12DM883
Atmel
Package:Memory
Price: please inquire
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CY7C128A-55DMB
Cypress Semiconductor
Package:Memory
Price: please inquire
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AT28C010-12DM/883
Adesto Technologies
Package:Memory
Price: please inquire
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HM1-6551B/883
Intersil
Package:Memory
Price: please inquire
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AT22V10-15DM883
Atmel
Package:Memory
Price: please inquire
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8403606JA
Intersil
Package:Memory
Price: please inquire
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STK12C68-5K35M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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STK11C68-5K55M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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AT28C64E-15DM/883
Atmel
Package:Memory
Price: please inquire
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5962-8852506ZA
Atmel
Package:Memory
Price: please inquire
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AT28C010-20UM
Atmel
Package:Memory
Price: please inquire
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AT28C64E-25LM/883
Atmel
Package:Memory
Price: please inquire
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5962-9459901MXC
Cypress Semiconductor
Package:Memory
Price: please inquire
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STK11C68-5K35M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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AT28C17E-20DM/883
Atmel
Package:Memory
Price: please inquire
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AT28HC16-90DM/883
Atmel
Package:Memory
Price: please inquire
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AS5SP128K36DQ-6/XT
Micross
Package:Memory
Price: please inquire
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CY7C198-35DMB
Rochester Electronics
Package:Memory
Price: please inquire