The category is 'Memory'
Memory (403)
- All Manufacturers
- ECCN Code
- Terminal Position
- Memory Width
- Organization
- HTS Code
- Terminal Pitch
- Surface Mount
- Reach Compliance Code
- Number of Functions
- Ihs Manufacturer
- JESD-30 Code
- Part Life Cycle Code
- ECCN Code:
3A001.A.2.C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Moisture Sensitivity Levels | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Shipping Restrictions | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Published | Series | Size / Dimension | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Frequency Stability | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | ESR (Equivalent Series Resistance) | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Load Capacitance | Number of Ports | Nominal Supply Current | Operating Mode | Frequency Tolerance | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Endurance | Write Cycle Time-Max (tWC) | Write Protection | Standby Voltage-Min | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Product Category | Memory Organization | Height | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free | Ratings |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No AT28C040-20FM/883 | Atmel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28C040-20FM/883 | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | BOTTOM BRAZED, CERAMIC, FP-32 | FL32,.5 | RECTANGULAR | FLATPACK | Obsolete | 5.67 | No | 5 V | Military grade | 3A001.A.2.C | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | DUAL | FLAT | 1 | 1.27 mm | unknown | R-CDFP-F32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 512KX8 | 3-STATE | 3.05 mm | 8 | 0.0003 A | 4194304 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | YES | YES | NO | 256 words | 20.85 mm | 12.2 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2568C-15/883C | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 15 ns | MICROSS COMPONENTS | Micross Components | MT5C2568C-15/883C | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | NOT SPECIFIED | 5.04 | No | 5 V | Military grade | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.18 mA | 32KX8 | 3-STATE | 5.715 mm | 8 | 0.02 A | 262144 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 35.56 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK14C88-5C45M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 32-CDIP (0.300, 7.62mm) | NO | 32 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | TIN LEAD | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 0.085mA | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.003A | MIL-STD-883 | 45 ns | 4.11mm | 40.64mm | No | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-9161705MXA | Renesas Electronics America Inc | Datasheet | 2257 |
| Min: 1 Mult: 1 | Through Hole | Through Hole | 84-BPGA | NO | 84 | 84-PGA (27.94x27.94) | 84 | 45 ns | 5962-9161705 | Renesas Electronics | 3 | TELEDYNE E2V (UK) LTD | Parallel | Renesas Electronics | 5962-9161705MXA | Volatile | Renesas Electronics America Inc | SMD/SMT | 8000 | 8000 | 125 °C | -55 °C | Tray | CERAMIC, METAL-SEALED COFIRED | PGA | PGA, PGA84M,11X11 | PGA84M,11X11 | SQUARE | GRID ARRAY | Obsolete | PGA | Last Time Buy | 8.23 | N | This product may require additional documentation to export from the United States. | 5.5 V | 4.5 V | 5 V | Military grade | -55°C ~ 125°C (TA) | Tray | - | e0 | 3A001.A.2.C | Asynchronous | TIN LEAD | 125 °C | -55 °C | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | PERPENDICULAR | PIN/PEG | 1 | 2.54 mm | compliant | 84 | S-CPGA-P84 | Qualified | 5 V | 5.5 V | 5 V | MILITARY | 4.5 V | Parallel | 5.5 V | 4.5 V | 128Kbit | 2 | ASYNCHRONOUS | 0.4 mA | 45 ns | SRAM | Parallel | 8 k x 16 | 3-STATE | 16 | 45ns | 26 b | SRAM | 128 kb | 0.03 A | 131072 bit | MIL-STD-883 | PARALLEL | COMMON | Asynchronous | 16 b | DUAL-PORT SRAM | 4.5 V | SRAM | 8K x 16 | 3.68 mm | 27.94 mm | 27.94 mm | 3.68 mm | No | Contains Lead | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT28HC256-90DM/883 | Adesto Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 18 Weeks | NO | 28 | 90 ns | MICROCHIP TECHNOLOGY INC | Microchip Technology Inc | AT28HC256-90DM/883 | 1 | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP-28 | RECTANGULAR | IN-LINE | Active | NOT SPECIFIED | 1.75 | 5 V | Military grade | e0 | 3A001.A.2.C | TIN/LEAD (SN/PB) | AUTOMATIC WRITE | 8542.32.00.51 | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 32KX8 | 5.72 mm | 8 | 262144 bit | MIL-STD-883 Class C | PARALLEL | EEPROM | 5 V | 10 ms | 37.215 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C2568C-20/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 20 ns | MICROSS COMPONENTS | Micross Components | MT5C2568C-20/XT | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | NOT SPECIFIED | 5.02 | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | compliant | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.15 mA | 32KX8 | 3-STATE | 5.715 mm | 8 | 0.005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT5C1008DCJ20L/XT | Micross | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 20 ns | MICROSS COMPONENTS | Micross Components | MT5C1008DCJ-20L/XT | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | End Of Life | SOJ | NOT SPECIFIED | 5.17 | No | 5 V | e0 | No | 3A001.A.2.C | Tin/Lead (Sn/Pb) | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | NOT SPECIFIED | 1 | 1.27 mm | compliant | 32 | R-CDSO-J32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.155 mA | 128KX8 | 3-STATE | 3.6576 mm | 8 | 0.001 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.828 mm | 10.414 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK11C68-5L55M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | 28-LCC | 28 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | SOFTWARE STORE/RECALL; RETENTION/ENDURANCE-10YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | STK11C68 | 28 | 5V | 5V | 64Kb 8K x 8 | 55mA | NVSRAM | Parallel | 8b | 8KX8 | 8 | 55ns | 64 kb | 0.002A | 38535Q/M;38534H;883B | 55 ns | 8b | 2.29mm | 13.97mm | No | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK14C88-5K45M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | Through Hole | 32-CDIP (0.300, 7.62mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | no | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | TIN LEAD | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 70mA | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.0015A | MIL-STD-883 | 45 ns | 8b | 4.11mm | 40.64mm | No | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK14C88-5L35M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 16 Weeks | Surface Mount | Surface Mount | 32-LCC (J-Lead) | 32 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | no | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 85mA | NVSRAM | Parallel | 8b | 8 | 35ns | 256 kb | 0.003A | MIL-STD-883 | 35 ns | 8b | 2.286mm | 13.97mm | No | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK14C88-5K35M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | Through Hole | 32-CDIP (0.300, 7.62mm) | 32 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | e0 | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | TIN LEAD | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | STK14C88 | 32 | 5V | 5V | 256Kb 32K x 8 | 85mA | NVSRAM | Parallel | 8b | 8 | 35ns | 256 kb | 0.0015A | MIL-STD-883 | 35 ns | 8b | 4.11mm | 40.64mm | No | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1361KVE33-133AXM | Cypress Semiconductor Corp | Datasheet | 230 | - | Min: 1 Mult: 1 | 6 Weeks | Surface Mount | 100-LQFP | YES | Volatile | -55°C~125°C TC | Tray | Active | 3 (168 Hours) | 100 | 3A001.A.2.C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | CY7C1361 | R-PQFP-G100 | 3.6V | 3.135V | 9Mb 256K x 36 | 133MHz | 6.5ns | SRAM | Parallel | 256KX36 | 36 | 9437184 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK12C68-5L55M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 14 Weeks | Surface Mount | Surface Mount | 28-LCC | 28 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | QUAD | NOT SPECIFIED | 1 | 5V | 1.27mm | not_compliant | NOT SPECIFIED | STK12C68 | 28 | Not Qualified | 5V | 5V | 64Kb 8K x 8 | 75mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 8KX8 | 8 | 35ns | 64 kb | 0.004A | 38535Q/M;38534H;883B | 35 ns | 8b | 2.29mm | 13.97mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No STK12C68-5C55M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 16 Weeks | Through Hole | Through Hole | 28-CDIP (0.300, 7.62mm) | 28 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2005 | Obsolete | 3 (168 Hours) | 28 | 3A001.A.2.C | RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | STK12C68 | 28 | 5V | 5V | 64Kb 8K x 8 | 55mA | NVSRAM | Parallel | 8b | 8KX8 | 8 | 35ns | 64 kb | 0.004A | 38535Q/M;38534H;883B | 35 ns | 8b | 4.14mm | 35.56mm | No | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-9459901MXA | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 14 Weeks | Through Hole | Through Hole | 28-CDIP (0.300, 7.62mm) | 28 | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2001 | e0 | Obsolete | 1 (Unlimited) | 28 | 3A001.A.2.C | TIN LEAD | EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES | 8542.32.00.41 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 28 | Qualified | 5V | 5V | 64Kb 8K x 8 | 75mA | NVSRAM | Parallel | 8b | 8KX8 | 8 | 55ns | 64 kb | 0.004A | MIL-STD-883 | 55 ns | 8b | 4.14mm | 35.56mm | No | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No STK14C88-5C35M | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 32-CDIP (0.300, 7.62mm) | NO | Non-Volatile | Military grade | -55°C~125°C TA | Tube | 2012 | Obsolete | 3 (168 Hours) | 32 | 3A001.A.2.C | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | 8542.32.00.41 | 4.5V~5.5V | DUAL | NOT SPECIFIED | 1 | 5V | 2.54mm | not_compliant | NOT SPECIFIED | STK14C88 | 32 | R-CDIP-T32 | Not Qualified | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 0.09mA | NVSRAM | Parallel | 8b | 32KX8 | 8 | 35ns | 0.003A | 262144 bit | MIL-STD-883 | 35 ns | 4.11mm | 40.64mm | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8751409YA | E2V | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 200 ns | TELEDYNE E2V (UK) LTD | e2v technologies | 5962-8751409YA | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Active | 5.73 | No | 5 V | Military grade | e0 | 3A001.A.2.C | TIN LEAD | AUTOMATIC WRITE | 8542.32.00.51 | EEPROMs | CMOS | QUAD | NO LEAD | 1 | 1.27 mm | compliant | R-CQCC-N32 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.08 mA | 8KX8 | 2.54 mm | 8 | 0.00025 A | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | EEPROM | 5 V | 10000 Write/Erase Cycles | 2 ms | YES | YES | NO | 32 words | 13.95 mm | 11.4 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS8E128K32PN-150/883C | Micross | Datasheet | - | - | Min: 1 Mult: 1 | NO | 66 | 150 ns | MICROSS COMPONENTS | AS8E128K32PN-150/883C | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA-66 | PGA66,11X11 | SQUARE | GRID ARRAY | Active | PGA | 5.48 | 5 V | Military grade | 3A001.A.2.C | ALSO CONFIGURABLE AS 512K X 8 | 8542.32.00.51 | PERPENDICULAR | PIN/PEG | 1 | 2.54 mm | compliant | 66 | S-CPGA-P66 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.25 mA | 128KX32 | 4.5974 mm | 32 | 0.001 A | 4194304 bit | MIL-STD-883 | PARALLEL | EEPROM MODULE | 5 V | 10 ms | SOFTWARE | 16 | YES | YES | 128 words | 27.305 mm | 27.305 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-3829415MXA | Cypress | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 25 ns | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | 5962-3829415MXA | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | CERAMIC, DIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | NOT SPECIFIED | 5.19 | No | 5 V | Military grade | e0 | 3A001.A.2.C | Tin/Lead (Sn/Pb) - hot dipped | 8542.32.00.41 | SRAMs | CMOS | DUAL | THROUGH-HOLE | NOT SPECIFIED | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.135 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962-8866203YA | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 4-SOJ, 5.5mm pitch | YES | 32 | 55 ns | INTEGRATED DEVICE TECHNOLOGY INC | Integrated Device Technology Inc | 5962-8866203YA | Suntsu Electronics, Inc. | 32768 words | 32000 | 125 °C | -55 °C | Bulk | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC32,.45X.55 | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | Obsolete | QFJ | Active | 30 | 8.05 | Non-Compliant | No | 5 V | Military grade | -40°C ~ 85°C | SXT834 | 0.315 L x 0.150 W (8.00mm x 3.80mm) | e0 | No | 3A001.A.2.C | MHz Crystal | TIN LEAD | 8542.32.00.41 | SRAMs | CMOS | QUAD | NO LEAD | 225 | 1 | 1.27 mm | compliant | 32 MHz | ±25ppm | 32 | R-CQCC-N32 | Not Qualified | 40 Ohms | 5.5 V | 5 V | MILITARY | 4.5 V | 18pF | 1 | Fundamental | ±25ppm | 0.15 mA | 32KX8 | 3-STATE | 3.048 mm | 8 | 0.02 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 0.098 (2.50mm) | 13.97 mm | 11.43 mm | - |
-
AT28C040-20FM/883
Atmel
Package:Memory
Price: please inquire
-
MT5C2568C-15/883C
Micross
Package:Memory
Price: please inquire
-
STK14C88-5C45M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
5962-9161705MXA
Renesas Electronics America Inc
Package:Memory
299.959300
-
AT28HC256-90DM/883
Adesto Technologies
Package:Memory
Price: please inquire
-
MT5C2568C-20/XT
Micross
Package:Memory
Price: please inquire
-
MT5C1008DCJ20L/XT
Micross
Package:Memory
Price: please inquire
-
STK11C68-5L55M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK14C88-5K45M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK14C88-5L35M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK14C88-5K35M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
CY7C1361KVE33-133AXM
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK12C68-5L55M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK12C68-5C55M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
5962-9459901MXA
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
STK14C88-5C35M
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
-
5962-8751409YA
E2V
Package:Memory
Price: please inquire
-
AS8E128K32PN-150/883C
Micross
Package:Memory
Price: please inquire
-
5962-3829415MXA
Cypress
Package:Memory
Price: please inquire
-
5962-8866203YA
Renesas
Package:Memory
Price: please inquire