The category is 'Memory'
Memory (3135)
- All Manufacturers
- ECCN Code
- Memory Format
- Memory Interface
- Memory Size
- Memory Types
- Moisture Sensitivity Level (MSL)
- Mounting Type
- Number of Terminations
- Operating Temperature
- Package / Case
- Packaging
- Part Status
- ECCN Code:
3A991.B.2.A
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Operating Supply Current | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Access Time (Max) | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Standby Voltage-Min | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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 | Mfr Part No IS61LPS25636A-200B2I | ISSI, Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 119-BBGA | YES | 119 | Volatile | -40°C~85°C TA | Tray | e0 | no | Active | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 3.135V~3.465V | BOTTOM | NOT SPECIFIED | 1 | 3.3V | 1.27mm | NOT SPECIFIED | 119 | Not Qualified | 3.3V | 3.135V | 9Mb 256K x 36 | 4 | 275mA | 200MHz | 3.1ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.105A | COMMON | Synchronous | 36b | 22mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61VPS25618A-200B3I | ISSI, Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 165-TBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | e0 | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | 2.375V~2.625V | BOTTOM | NOT SPECIFIED | 1 | 2.5V | 1mm | NOT SPECIFIED | 165 | Not Qualified | 2.75V | 2.5V | 2.375V | 4.5Mb 256K x 18 | 210mA | 200MHz | 3.1ns | SRAM | Parallel | 256KX18 | 3-STATE | 18 | 0.000075A | 4718592 bit | COMMON | 2.38V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1383D-133AXIT | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 100-LQFP | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | unknown | CY7C1383 | 100 | R-PQFP-G100 | Not Qualified | 3.6V | 3.135V | 18Mb 1M x 18 | 133MHz | 6.5ns | SRAM | Parallel | 1MX18 | 18 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS61DDB22M36A-300M3L | ISSI, Integrated Silicon Solution Inc | Datasheet | 10 |
| Min: 1 Mult: 1 | 12 Weeks | Surface Mount | 165-LBGA | YES | 165 | Volatile | Commercial grade | 0°C~70°C TA | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1.71V~1.89V | BOTTOM | NOT SPECIFIED | 1 | 1.8V | 1mm | NOT SPECIFIED | 165 | 1.89V | 1.71V | 72Mb 2M x 36 | 300MHz | SRAM | Parallel | 2MX36 | 36 | 75497472 bit | 0.45 ns | 1.4mm | 17mm | 15mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1170V18-400BZC | Cypress Semiconductor Corp | Datasheet | 34 |
| Min: 1 Mult: 1 | Surface Mount | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | NOT SPECIFIED | CY7C1170 | 165 | Not Qualified | 1.9V | 1.8V | 1.7V | 18Mb 512K x 36 | 400MHz | 1.08mA | 50 ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 0.3A | 18874368 bit | COMMON | 1.7V | 1.4mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No MT45W8MW16BGX-701LWT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W8MW16BGX-701LWT | 8388608 words | 8000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.68 | Compliant | Yes | 1.8 V | e1 | Yes | 3A991.B.2.A | TIN SILVER COPPER | 85 °C | -30 °C | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | 1.8 V | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | 1 | ASYNCHRONOUS | 0.035 mA | 8MX16 | 3-STATE | 1 mm | 16 | 23 b | 128 Mb | 0.00016 A | 134217728 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 10 mm | 8 mm | No | ||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No 5962F1120201QXA | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | 28 Weeks | Through Hole | 165-BFCCGA | YES | 165 | Volatile | Military grade | -55°C~125°C TA | Tray | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1.27mm | Qualified | 1.9V | 1.8V | 1.7V | 72Mb 2M x 36 | 250MHz | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 0.66A | 75497472 bit | MIL-STD-883 | 0.85 ns | SEPARATE | 5.38mm | 25mm | 21mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No UPD44165184F5-E40-EQ1 | NEC | Datasheet | 520 | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | NEC ELECTRONICS CORP | NEC Electronics Group | UPD44165184F5-E40-EQ1 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Obsolete | BGA | NOT SPECIFIED | 5.77 | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 1MX18 | 18 | 18874368 bit | PARALLEL | QDR SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1460AV25-250AXCT | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2006 | NoBL™ | e3/e4 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | MATTE TIN/NICKEL PALLADIUM GOLD | PIPELINED ARCHITECTURE | 8542.32.00.41 | 2.375V~2.625V | QUAD | 1 | 2.5V | 0.65mm | unknown | CY7C1460 | 100 | R-PQFP-G100 | Not Qualified | 2.625V | 2.375V | 36Mb 1M x 36 | 250MHz | 2.6ns | SRAM | Parallel | 1MX36 | 36 | 37748736 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT45W2MW16BGB-708WT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W2MW16BGB-708WT | 2097152 words | 2000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | 30 | 5.83 | Compliant | Yes | e1 | Yes | 3A991.B.2.A | TIN SILVER COPPER | 85 °C | -30 °C | SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | 1.8 V | 1.95 V | 1.8,1.8/3 V | OTHER | 1.7 V | 1 | ASYNCHRONOUS | 0.035 mA | 2MX16 | 3-STATE | 1 mm | 16 | 21 b | 32 Mb | 0.00011 A | 33554432 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 8 mm | 6 mm | No | |||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No DS1265W-150 | Maxim Integrated | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 36-DIP Module (0.610, 15.49mm) | NO | Non-Volatile | 0°C~70°C | Tube | 2004 | e3 | yes | Obsolete | 1 (Unlimited) | 36 | 3A991.B.2.A | Matte Tin (Sn) | 8473.30.11.40 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 2.54mm | not_compliant | NOT SPECIFIED | 36 | R-XDMA-P36 | Not Qualified | 3.6V | 3.3V | 3V | 8Mb 1M x 8 | ASYNCHRONOUS | 0.05mA | NVSRAM | Parallel | 1MX8 | 8 | 150ns | 0.00015A | 8388608 bit | 150 ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No DS1249Y-70IND | Maxim Integrated | Datasheet | 1696 | - | Min: 1 Mult: 1 | Through Hole | 32-DIP Module (0.600, 15.24mm) | NO | 32 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | e0 | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | TIN LEAD | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 70GHz | DS1249Y | 32 | 5V | 2Mb 256K x 8 | 85mA | NVSRAM | Parallel | 8b | 256KX8 | 8 | 70ns | 2 Mb | 70 ns | No | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No DS1249AB-100 | Maxim Integrated | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | 32-DIP Module (0.600, 15.24mm) | NO | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2006 | e0 | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | TIN LEAD | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.75V~5.25V | DUAL | 240 | 1 | 5V | 2.54mm | 100GHz | DS1249AB | 32 | 5V | 2Mb 256K x 8 | 85mA | NVSRAM | Parallel | 8b | 256KX8 | 8 | 100ns | 2 Mb | 100 ns | 10.29mm | 53.085mm | No | Non-RoHS Compliant | Contains Lead | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CYD18S36V18-167BBXC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 256 | 256 | 11 ns | 167 MHz | CYPRESS SEMICONDUCTOR CORP | Cypress Semiconductor | CYD18S36V18-167BBXC | SDR | 3 | 512000 | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA256,16X16,40 | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | Active | BGA | 20 | 5.64 | Compliant | Yes | 1.5 V | Bulk | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 66.7 MHz | 256 | S-PBGA-B256 | Not Qualified | 1.8 V | 1.58 V | 1.5/1.8 V | COMMERCIAL | 1.42 V | Parallel | 1.9 V | 1.7 V | 2.3 MB | 2 | 720 mA | SYNCHRONOUS | 0.72 mA | 4 ns | 512KX36 | 3-STATE | 1.7 mm | 36 | 19 b | 18 Mb | 0.3 A | 18874368 bit | 167 MHz | PARALLEL | COMMON | Synchronous | 36 b | DUAL-PORT SRAM | 1.4 V | 19 mm | 19 mm | Lead Free | ||||||||||||||||||||||||||||
| Mfr Part No MT45W1MW16BDGB-708IT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 54 | 54 | 70 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W1MW16BDGB-708IT | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.82 | Compliant | Yes | 1.8 V | e1 | 3A991.B.2.A | TIN SILVER COPPER | 85 °C | -40 °C | SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.41 | Other Memory ICs | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | unknown | 54 | R-PBGA-B54 | Not Qualified | 1.8 V | 1.95 V | 1.8,1.8/3 V | INDUSTRIAL | 1.7 V | 1 | ASYNCHRONOUS | 0.035 mA | 1MX16 | 3-STATE | 1 mm | 16 | 20 b | 16 Mb | 0.00007 A | 16777216 bit | PARALLEL | COMMON | PSEUDO STATIC RAM | 1.7 V | 8 mm | 6 mm | No | ||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS62WV10248BLL-55BI | ISSI, Integrated Silicon Solution Inc | Datasheet | 249 | - | Min: 1 Mult: 1 | Surface Mount | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | e0 | no | Last Time Buy | 2 (1 Year) | 48 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 2.5V~3.6V | BOTTOM | NOT SPECIFIED | 1 | 3V | 0.75mm | NOT SPECIFIED | 48 | Not Qualified | 3.6V | 3/3.3V | 2.5V | 8Mb 1M x 8 | SRAM | Parallel | 1MX8 | 3-STATE | 8 | 55ns | 0.00002A | 8388608 bit | 55 ns | COMMON | 1.2V | 1.2mm | 8.7mm | 7.2mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT45W2MW16PFA-70WT | Micron | Datasheet | 3200 | - | Min: 1 Mult: 1 | MICRON TECHNOLOGY INC | Micron Technology Inc | MT45W2MW16PFA-70WT | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, VFBGA-48 | Obsolete | BGA | 5.88 | No | No | 3A991.B.2.A | 8542.32.00.41 | unknown | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CY7C1380D-200AXCT | Cypress Semiconductor Corp | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2004 | e4 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | NICKEL PALLADIUM GOLD | PIPELINED ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | unknown | CY7C1380 | 100 | R-PQFP-G100 | Not Qualified | 3.6V | 3.135V | 18Mb 512K x 36 | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS880Z36BT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5.5 ns | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | GS880Z36BT-250I | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Contact Manufacturer | 5.62 | 2.5 V | 3A991.B.2.A | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | CMOS | QUAD | GULL WING | 1 | 0.65 mm | unknown | R-PQFP-G100 | 2.7 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 256KX36 | 1.6 mm | 36 | 9437184 bit | PARALLEL | ZBT SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr Part No CY7C1041BV33-15VC | Rochester Electronics, LLC | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 44-BSOJ (0.400, 10.16mm Width) | YES | Volatile | Commercial grade | 0°C~70°C TA | Tube | e0 | no | Obsolete | 1 (Unlimited) | 44 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | 3V~3.6V | DUAL | NOT SPECIFIED | 1 | 3.3V | 1.27mm | NOT SPECIFIED | 44 | R-PDSO-J44 | Not Qualified | 3.6V | 3V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 15ns | 4194304 bit | 15 ns | 3.7592mm | 28.575mm | 10.16mm | Non-RoHS Compliant |
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IS61LPS25636A-200B2I
ISSI, Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61VPS25618A-200B3I
ISSI, Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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CY7C1383D-133AXIT
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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IS61DDB22M36A-300M3L
ISSI, Integrated Silicon Solution Inc
Package:Memory
95.876670
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CY7C1170V18-400BZC
Cypress Semiconductor Corp
Package:Memory
38.086821
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MT45W8MW16BGX-701LWT
Micron
Package:Memory
Price: please inquire
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5962F1120201QXA
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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UPD44165184F5-E40-EQ1
NEC
Package:Memory
Price: please inquire
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CY7C1460AV25-250AXCT
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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MT45W2MW16BGB-708WT
Micron
Package:Memory
Price: please inquire
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DS1265W-150
Maxim Integrated
Package:Memory
Price: please inquire
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DS1249Y-70IND
Maxim Integrated
Package:Memory
Price: please inquire
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DS1249AB-100
Maxim Integrated
Package:Memory
Price: please inquire
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CYD18S36V18-167BBXC
Cypress Semiconductor
Package:Memory
Price: please inquire
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MT45W1MW16BDGB-708IT
Micron
Package:Memory
Price: please inquire
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IS62WV10248BLL-55BI
ISSI, Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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MT45W2MW16PFA-70WT
Micron
Package:Memory
Price: please inquire
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CY7C1380D-200AXCT
Cypress Semiconductor Corp
Package:Memory
Price: please inquire
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GS880Z36BT-250I
GSI Technology
Package:Memory
Price: please inquire
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CY7C1041BV33-15VC
Rochester Electronics, LLC
Package:Memory
Price: please inquire