The category is 'Memory'
Memory (3135)
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- ECCN Code
- Memory Format
- Memory Interface
- Memory Size
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- ECCN Code:
3A991.B.2.A
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Length | Width |
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 | Mfr Part No IS61VVPS204818B-200B3LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | 1.8 V | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | unknown | R-PBGA-B165 | 1.89 V | INDUSTRIAL | 1.71 V | SYNCHRONOUS | 2MX18 | 1.2 mm | 18 | 37748736 bit | PARALLEL | CACHE SRAM | 15 mm | 13 mm | ||||||||||||||||||||||
| Mfr Part No IS61LF12832A-6.5B3I | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.18 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.035 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 15 mm | 13 mm | |||||||
| Mfr Part No LY62L5128LL-55LLI | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | LYONTEK INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | Yes | 3 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.04 mA | 512KX8 | 1.2 mm | 8 | 4194304 bit | PARALLEL | STANDARD SRAM | 18.4 mm | 8 mm | |||||||||||||||
| Mfr Part No MCM67A618AFN10 | NXP Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 10 ns | NXP SEMICONDUCTORS | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | LCC-52 | SQUARE | CHIP CARRIER | Obsolete | 5 V | 3A991.B.2.A | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J52 | 5.25 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | 64KX18 | 4.57 mm | 18 | 1179648 bit | PARALLEL | CACHE SRAM | 19.125 mm | 19.125 mm | |||||||||||||||||||||||
| Mfr Part No IS61VF204836B-7.5M3LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 7.5 ns | 117 MHz | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Yes | 2.5 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 2MX36 | 3-STATE | 1.4 mm | 36 | 75497472 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 17 mm | 15 mm | |||||||||||||
 | Mfr Part No IS61VPD51218A-200B2I | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 0.275 mA | 512KX18 | 3-STATE | 2.41 mm | 18 | 0.06 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 22 mm | 14 mm | ||||||
| Mfr Part No MT58LC64K18C4EJ-7 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 7 ns | MICRON TECHNOLOGY INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QCCJ | PLASTIC, LCC-52 | LDCC52,.8SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | BURST COUNTER; BYTE WRITE CONTROL; SELF TIMED REGISTER | 8542.32.00.41 | QUAD | J BEND | 1 | 1.27 mm | not_compliant | 52 | S-PQCC-J52 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | 1 | SYNCHRONOUS | 0.225 mA | 64KX18 | 3-STATE | 4.57 mm | 18 | 0.005 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | YES | 19.125 mm | 19.125 mm | |||||||
 | Mfr Part No KM684002BT-10 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 10 ns | SAMSUNG SEMICONDUCTOR INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP36,.46,40 | TSOP36,.46,40 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | No | 3A991.B.2.A | TIN LEAD | TTL COMPATIBLE INPUTS/OUTPUTS | 8542.32.00.41 | DUAL | GULL WING | 1 | 1 mm | unknown | 36 | R-PDSO-G36 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.2 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 18.41 mm | 10.16 mm | |||||||||
 | Mfr Part No IS61SF6436-10TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | 1 | SYNCHRONOUS | 0.2 mA | 64KX36 | 3-STATE | 1.6 mm | 36 | 0.01 A | 2359296 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | YES | 20 mm | 14 mm | ||||||||
| Mfr Part No CY62137VNLL-70ZXI | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 70 ns | CYPRESS SEMICONDUCTOR CORP | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | LEAD FREE, TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3 V | e4 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.8 mm | unknown | 20 | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 128KX16 | 3-STATE | 1.194 mm | 16 | 0.0000075 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1 V | 18.415 mm | 10.16 mm | |||||||
| Mfr Part No IS64VVPS409618B-200TQ2LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.1 ns | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | Yes | 1.8 V | e3 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | R-PQFP-G100 | 1.89 V | AUTOMOTIVE | 1.71 V | SYNCHRONOUS | 4MX18 | 1.6 mm | 18 | 75497472 bit | PARALLEL | STANDARD SRAM | 20 mm | 14 mm | |||||||||||||||||
| Mfr Part No IS64VLPS409618B-166B2LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 125 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 2.5 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 4MX18 | 3-STATE | 3.5 mm | 18 | 75497472 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 22 mm | 14 mm | ||||||||||||
| Mfr Part No KM68V4002BLT-15 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 15 ns | SAMSUNG SEMICONDUCTOR INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP36,.46,40 | TSOP36,.46,40 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 1 mm | unknown | 36 | R-PDSO-G36 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.15 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.0007 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 18.41 mm | 10.16 mm | |||||||||||
| Mfr Part No IS64VF12832EC-6.5TQLA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 2.5 V | e3 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 0.2 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 2.38 V | 20 mm | 14 mm | |||||
| Mfr Part No UPD4482362GF-A60 | NEC Electronics Group | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.5 ns | NEC ELECTRONICS CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 256KX36 | 1.7 mm | 36 | 9437184 bit | PARALLEL | CACHE SRAM | 20 mm | 14 mm | ||||||||||||||||
| Mfr Part No LY622568RL-45SL | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 45 ns | LYONTEK INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Contact Manufacturer | Yes | 5 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.08 mA | 256KX8 | 1.25 mm | 8 | 2097152 bit | PARALLEL | STANDARD SRAM | 11.8 mm | 8 mm | ||||||||||||||||
| Mfr Part No IS67WVE2M16TALL-70BA1 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | INTEGRATED SILICON SOLUTION INC | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 6 X 8 MM, MO-207, TFBGA-48 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | R-PBGA-B48 | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 2MX16 | 1.2 mm | 16 | 33554432 bit | PARALLEL | PSEUDO STATIC RAM | 8 mm | 6 mm | |||||||||||||||||||||||
| Mfr Part No IS61NVP51236B-200B2LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3 ns | INTEGRATED SILICON SOLUTION INC | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | HBGA | HBGA, | RECTANGULAR | GRID ARRAY, HEAT SINK/SLUG | Obsolete | 2.5 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | unknown | R-PBGA-B119 | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 512KX36 | 3.5 mm | 36 | 18874368 bit | PARALLEL | STANDARD SRAM | 22 mm | 14 mm | ||||||||||||||||||||||
| Mfr Part No TC55VD836FFI-143 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4 ns | 143 MHz | TOSHIBA CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.42 mA | 256KX36 | 3-STATE | 1.7 mm | 36 | 0.01 A | 9437184 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | |||||||||
| Mfr Part No IS61NW6432-7TQ | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7 ns | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.21 mA | 64KX32 | 3-STATE | 32 | 0.06 A | 2097152 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V |
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IS61VVPS204818B-200B3LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61LF12832A-6.5B3I
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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LY62L5128LL-55LLI
Lyontek Inc
Package:Memory
Price: please inquire
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MCM67A618AFN10
NXP Semiconductors
Package:Memory
Price: please inquire
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IS61VF204836B-7.5M3LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61VPD51218A-200B2I
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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MT58LC64K18C4EJ-7
Micron Technology Inc
Package:Memory
Price: please inquire
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KM684002BT-10
Samsung Semiconductor
Package:Memory
Price: please inquire
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IS61SF6436-10TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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CY62137VNLL-70ZXI
Cypress Semiconductor
Package:Memory
Price: please inquire
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IS64VVPS409618B-200TQ2LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS64VLPS409618B-166B2LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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KM68V4002BLT-15
Samsung Semiconductor
Package:Memory
Price: please inquire
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IS64VF12832EC-6.5TQLA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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UPD4482362GF-A60
NEC Electronics Group
Package:Memory
Price: please inquire
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LY622568RL-45SL
Lyontek Inc
Package:Memory
Price: please inquire
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IS67WVE2M16TALL-70BA1
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61NVP51236B-200B2LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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TC55VD836FFI-143
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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IS61NW6432-7TQ
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire