The category is 'Memory'
Memory (3135)
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- ECCN Code:
3A991.B.2.A
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Length | Width |
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![]() | Mfr Part No CY7C1363C-133BZC | Cypress Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 6.5 ns | 133 MHz | CYPRESS SEMICONDUCTOR CORP | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | 15 X 13 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | NOT SPECIFIED | 165 | R-PBGA-B165 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.25 mA | 512KX18 | 3-STATE | 1.4 mm | 18 | 0.04 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 15 mm | 13 mm | ||||
![]() | Mfr Part No UPD4382361GF-A85 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 100 MHz | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.35 mA | 256KX36 | 3-STATE | 36 | 0.01 A | 9437184 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | |||||||||||||||||
![]() | Mfr Part No IBM041814PQKB-9 | IBM | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 9 ns | IBM MICROELECTRONICS | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 64KX18 | 3-STATE | 1.6 mm | 18 | 0.025 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | ||||||||||||
![]() | Mfr Part No KM68FV2000TI-7 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.8,20 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3.3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.002 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | 18.4 mm | 8 mm | ||||||||
![]() | Mfr Part No IS61LPS12832A-200TQI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.21 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.075 A | 4194304 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||
![]() | Mfr Part No AS7C33128PFS32A-166TQC | Alliance Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 9 ns | 166 MHz | ALLIANCE SEMICONDUCTOR CORP | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.6 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.475 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.03 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 20 mm | 14 mm | |||||||
![]() | Mfr Part No IS61SPS25636D-150TQ | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 3.8 ns | 150 MHz | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.25 mA | 256KX36 | 3-STATE | 1.6 mm | 36 | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||||
![]() | Mfr Part No R1WV3216RBG-8SR | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | RENESAS ELECTRONICS CORP | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY | Active | BGA | 3 V | e1 | 3A991.B.2.A | TIN SILVER COPPER | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.07 mA | 2MX16 | 3-STATE | 16 | 33554432 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | ||||||||||||||
![]() | Mfr Part No MT55L128V36P1B-7.5 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 4.2 ns | 133 MHz | MICRON TECHNOLOGY INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Transferred | BGA | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | not_compliant | 119 | R-PBGA-B119 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.4 mA | 128KX36 | 3-STATE | 2.4 mm | 36 | 0.01 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 22 mm | 14 mm | ||||||||
![]() | Mfr Part No MCM69R737AZP6 | Freescale Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3 ns | FREESCALE SEMICONDUCTOR INC | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Transferred | BGA | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | unknown | 119 | R-PBGA-B119 | Not Qualified | 3.6 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 128KX36 | 2.4 mm | 36 | 4718592 bit | PARALLEL | LATE-WRITE SRAM | 22 mm | 14 mm | ||||||||||||||||||
![]() | Mfr Part No MCM69R737AZP6 | NXP Semiconductors | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 3 ns | NXP SEMICONDUCTORS | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Obsolete | 3.3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | unknown | R-PBGA-B119 | 3.6 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 128KX36 | 2.4 mm | 36 | 4718592 bit | PARALLEL | LATE-WRITE SRAM | 22 mm | 14 mm | |||||||||||||||||||||
![]() | Mfr Part No IBM04181AULAB-6N | IBM | Datasheet | - | - | Min: 1 Mult: 1 | YES | 119 | 7 ns | IBM MICROELECTRONICS | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | End Of Life | BGA | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | BOTTOM | BALL | 1 | 1.27 mm | unknown | 119 | R-PBGA-B119 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.45 mA | 64KX18 | 3-STATE | 2.41 mm | 18 | 0.025 A | 1179648 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 22 mm | 14 mm | |||||||||
![]() | Mfr Part No UPD444010LGY-B85X-MJH | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 85 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -25 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.71,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 0.5 mm | unknown | R-PDSO-G48 | Not Qualified | OTHER | ASYNCHRONOUS | 0.04 mA | 512KX8 | 3-STATE | 8 | 0.000007 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | ||||||||||||||||||
![]() | Mfr Part No IS64VVPS204836B-166M3LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 3.8 ns | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Yes | 1.8 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | R-PBGA-B165 | 1.89 V | AUTOMOTIVE | 1.71 V | SYNCHRONOUS | 2MX36 | 1.4 mm | 36 | 75497472 bit | PARALLEL | STANDARD SRAM | 17 mm | 15 mm | ||||||||||||||
![]() | Mfr Part No R1Q2A3618BBG-40R | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 250 MHz | RENESAS TECHNOLOGY CORP | 1 | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 1.8 V | No | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.65 mA | 2MX18 | 3-STATE | 1.46 mm | 18 | 0.35 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | |||||||||
![]() | Mfr Part No KM68U2000LTGI-10L | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 100 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSOP1, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP1 | No | 3 V | e0 | 3A991.B.2.A | TIN LEAD | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.04 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.000015 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 11.8 mm | 8 mm | ||||||||
![]() | Mfr Part No IC61LV5128-8K | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 36 | 8 ns | INTEGRATED SILICON SOLUTION INC | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-36 | SOJ36,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | R-PDSO-J36 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | ASYNCHRONOUS | 0.3 mA | 512KX8 | 3-STATE | 8 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||
![]() | Mfr Part No LY61L12816AML-8 | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | LYONTEK INC | 3 | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | Yes | 3.3 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 30 | R-PDSO-G44 | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 128KX16 | 1.2 mm | 16 | 2097152 bit | PARALLEL | STANDARD SRAM | 18.415 mm | 10.16 mm | |||||||||||||||
![]() | Mfr Part No IS61LSCS25672-250B | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 209 | 2.1 ns | INTEGRATED SILICON SOLUTION INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | 14 X 22 MM, 1 MM PITCH, BGA-209 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | No | 1.8 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 1.9 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 256KX72 | 2.2 mm | 72 | 18874368 bit | PARALLEL | STANDARD SRAM | 22 mm | 14 mm | ||||||||||||
![]() | Mfr Part No IS64NLP12836EC-250B3LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 3.3 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | SYNCHRONOUS | 0.285 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 15 mm | 13 mm |
CY7C1363C-133BZC
Cypress Semiconductor
Package:Memory
Price: please inquire
UPD4382361GF-A85
Renesas Electronics Corporation
Package:Memory
Price: please inquire
IBM041814PQKB-9
IBM
Package:Memory
Price: please inquire
KM68FV2000TI-7
Samsung Semiconductor
Package:Memory
Price: please inquire
IS61LPS12832A-200TQI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
AS7C33128PFS32A-166TQC
Alliance Semiconductor Corporation
Package:Memory
Price: please inquire
IS61SPS25636D-150TQ
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
R1WV3216RBG-8SR
Renesas Electronics Corporation
Package:Memory
Price: please inquire
MT55L128V36P1B-7.5
Micron Technology Inc
Package:Memory
Price: please inquire
MCM69R737AZP6
Freescale Semiconductor
Package:Memory
Price: please inquire
MCM69R737AZP6
NXP Semiconductors
Package:Memory
Price: please inquire
IBM04181AULAB-6N
IBM
Package:Memory
Price: please inquire
UPD444010LGY-B85X-MJH
Renesas Electronics Corporation
Package:Memory
Price: please inquire
IS64VVPS204836B-166M3LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
R1Q2A3618BBG-40R
Renesas Electronics Corporation
Package:Memory
Price: please inquire
KM68U2000LTGI-10L
Samsung Semiconductor
Package:Memory
Price: please inquire
IC61LV5128-8K
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
LY61L12816AML-8
Lyontek Inc
Package:Memory
Price: please inquire
IS61LSCS25672-250B
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
IS64NLP12836EC-250B3LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
