The category is 'Memory'
Memory (3135)
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- ECCN Code:
3A991.B.2.A
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Alternate Memory Width | Output Enable | Length | Width |
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 | Mfr Part No IS62C51216AL-55MLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | INTEGRATED SILICON SOLUTION INC | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY | Active | DSBGA | Yes | 5 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | 48 | R-PBGA-B48 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.025 mA | 512KX16 | 3-STATE | 16 | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||
 | Mfr Part No IS61SF6432-10PQI | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.7X.9 | QFP100,.7X.9 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | INDUSTRIAL | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 32 | 0.02 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | ||||||||||||||||||
 | Mfr Part No IS61SF6432-10PQI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 10 ns | 66 MHz | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | PLASTIC, QFP-100 | QFP100,.7X.9 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | 8542.32.00.41 | QUAD | GULL WING | 1 | 0.65 mm | unknown | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 1.6 mm | 32 | 0.02 A | 2097152 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||
| Mfr Part No IS61SF6432-9TQ | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 9 ns | 76.9 MHz | INTEGRATED CIRCUIT SOLUTION INC | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | QUAD | GULL WING | 0.635 mm | unknown | R-PQFP-G100 | Not Qualified | COMMERCIAL | SYNCHRONOUS | 0.3 mA | 64KX32 | 3-STATE | 32 | 0.01 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | |||||||||||||||||||
| Mfr Part No IS64VPS204836B-166B3LA3 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 3.8 ns | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | Yes | 2.5 V | e1 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | R-PBGA-B165 | 2.625 V | AUTOMOTIVE | 2.375 V | SYNCHRONOUS | 2MX36 | 1.2 mm | 36 | 75497472 bit | PARALLEL | STANDARD SRAM | 15 mm | 13 mm | |||||||||||||||||
| Mfr Part No K6X4008T1F-UB70 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | SAMSUNG SEMICONDUCTOR INC | 1 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | Yes | e3 | Yes | 3A991.B.2.A | MATTE TIN | 8542.32.00.41 | DUAL | GULL WING | 1.27 mm | compliant | R-PDSO-G32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.025 mA | 512KX8 | 3-STATE | 8 | 0.00001 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||
| Mfr Part No R1LV1616RSD-5SR | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 52 | 55 ns | RENESAS ELECTRONICS CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP52,.4,16 | TSSOP52,.4,16 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | TSOP2 | Yes | 3 V | e0 | No | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.4 mm | compliant | NOT SPECIFIED | 52 | R-PDSO-G52 | Not Qualified | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.04 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.000006 A | 16777216 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | 8 | 10.79 mm | 8.89 mm | |||||||||
| Mfr Part No IS61LV25616-8T | Integrated Circuit Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | INTEGRATED CIRCUIT SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP | TSOP, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Transferred | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 0.8 mm | unknown | R-PDSO-G44 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.35 mA | 256KX16 | 3-STATE | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | ||||||||||||||||||||
 | Mfr Part No IS61LV25616-8T | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.26 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 18.41 mm | 10.16 mm | ||||||||||||
 | Mfr Part No IS61LV25616-8T | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 8 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.63 V | COMMERCIAL | 3.135 V | ASYNCHRONOUS | 0.26 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 3.14 V | 18.41 mm | 10.16 mm | ||||||||||||
| Mfr Part No RMLV0816BGBG-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 45 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 0.75 MM PITCH, FBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | 3 V | 3A991.B.2.A | IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | compliant | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.03 mA | 512KX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | YES | 8.5 mm | 7.5 mm | ||||||||||||||
| Mfr Part No RMLV0416EGSB-4S2 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 45 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | Yes | 3 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 0.8 mm | compliant | R-PDSO-G44 | Not Qualified | INDUSTRIAL | ASYNCHRONOUS | 0.02 mA | 256KX16 | 3-STATE | 16 | 0.000002 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2.7 V | ||||||||||||||||||||||
| Mfr Part No IS61NVP102418B-200B3LI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 3 ns | INTEGRATED SILICON SOLUTION INC | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | 2.5 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 30 | R-PBGA-B165 | 2.625 V | INDUSTRIAL | 2.375 V | SYNCHRONOUS | 1MX18 | 1.2 mm | 18 | 18874368 bit | PARALLEL | STANDARD SRAM | 15 mm | 13 mm | |||||||||||||||||||||
| Mfr Part No IS61LF6436A-8.5TQLI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 100 | 8.5 ns | INTEGRATED SILICON SOLUTION INC | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 3.3 V | e3 | Yes | 3A991.B.2.A | MATTE TIN | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 100 | R-PQFP-G100 | Not Qualified | 3.63 V | INDUSTRIAL | 3.135 V | SYNCHRONOUS | 0.15 mA | 64KX36 | 3-STATE | 1.6 mm | 36 | 0.035 A | 2359296 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | ||||||
| Mfr Part No M5M5Y416CWG-70HI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 70 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | 7 X 8.50 MM, CSP-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Transferred | BGA | 2 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | 48 | R-PBGA-B48 | Not Qualified | 2.3 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 3-STATE | 1.06 mm | 16 | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 1.3 V | 8.5 mm | 7 mm | |||||||||||||||
| Mfr Part No T15V2M16B-55C | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 48 | 55 ns | TM TECHNOLOGY INC | 131072 words | 128000 | 70 °C | -10 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | 3 V | 3A991.B.2.A | 8542.32.00.41 | BOTTOM | BALL | 1 | 0.75 mm | unknown | R-PBGA-B48 | Not Qualified | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.04 mA | 128KX16 | 3-STATE | 1.2 mm | 16 | 0.000015 A | 2097152 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 8 mm | 6 mm | ||||||||||||||||
| Mfr Part No IDT71V3548S133PF | Integrated Device Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 4.2 ns | 133 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.65 mm | not_compliant | 20 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.3 mA | 256KX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 3.14 V | 20 mm | 14 mm | |||||||
 | Mfr Part No HM628512ALTT-7SL | Hitachi Ltd | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | HITACHI LTD | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 5 V | 3A991.B.2.A | BATTERY BACK-UP OPERATION | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX8 | 3-STATE | 1.2 mm | 8 | 0.000015 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | 20.95 mm | 10.16 mm | ||||||||||||||
| Mfr Part No LY62L2568RL-55SL | Lyontek Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 55 ns | LYONTEK INC | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Contact Manufacturer | 3 V | e3 | 3A991.B.2.A | Tin (Sn) | 8542.32.00.41 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 30 | R-PDSO-G32 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.25 mA | 256KX8 | 1.25 mm | 8 | 2097152 bit | PARALLEL | STANDARD SRAM | 11.8 mm | 8 mm | ||||||||||||||||||
| Mfr Part No M5M5408BTP-70HI | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 70 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 0.400 INCH, PLASTIC, TSOP2-32 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE | Obsolete | TSOP2 | No | 5 V | 3A991.B.2.A | 8542.32.00.41 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.09 mA | 512KX8 | 3-STATE | 8 | 0.00003 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V |
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IS62C51216AL-55MLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61SF6432-10PQI
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IS61SF6432-10PQI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61SF6432-9TQ
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IS64VPS204836B-166B3LA3
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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K6X4008T1F-UB70
Samsung Semiconductor
Package:Memory
Price: please inquire
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R1LV1616RSD-5SR
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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IS61LV25616-8T
Integrated Circuit Solution Inc
Package:Memory
Price: please inquire
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IS61LV25616-8T
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61LV25616-8T
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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RMLV0816BGBG-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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RMLV0416EGSB-4S2
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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IS61NVP102418B-200B3LI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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IS61LF6436A-8.5TQLI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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M5M5Y416CWG-70HI
Renesas Electronics Corporation
Package:Memory
Price: please inquire
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T15V2M16B-55C
TM Technology Inc
Package:Memory
Price: please inquire
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IDT71V3548S133PF
Integrated Device Technology Inc
Package:Memory
Price: please inquire
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HM628512ALTT-7SL
Hitachi Ltd
Package:Memory
Price: please inquire
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LY62L2568RL-55SL
Lyontek Inc
Package:Memory
Price: please inquire
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M5M5408BTP-70HI
Renesas Electronics Corporation
Package:Memory
Price: please inquire