The category is 'Memory'
Memory (6000)
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- ECCN Code:
EAR99
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No KM416C254DT-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 5 V | e0 | EAR99 | TIN LEAD | CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | FAST PAGE WITH EDO | NO | 18.41 mm | 10.16 mm | |||||||||||||||||
![]() | Mfr Part No CAT25C32U | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | CATALYST SEMICONDUCTOR INC | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | GULL WING | 0.635 mm | unknown | R-PDSO-G8 | Not Qualified | COMMERCIAL | 0.005 mA | 4KX8 | 8 | 32768 bit | SERIAL | EEPROM | SPI | 1000000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||
![]() | Mfr Part No AT27C256R-70DC | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | ATMEL CORP | 32768 words | 32000 | 70 °C | CERAMIC, GLASS-SEALED | WDIP | 0.600 INCH, WINDOWED, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.61 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.02 mA | 32KX8 | 3-STATE | 5.72 mm | 8 | 0.0001 A | 262144 bit | PARALLEL | COMMON | UVPROM | 13 V | 37.25 mm | 15.24 mm | |||||||||||||||||||
![]() | Mfr Part No UPD42S4800V-70 | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 70 ns | RENESAS ELECTRONICS CORP | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | ZIP | ZIP, ZIP28,.1 | ZIP28,.1 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | ZIG-ZAG | THROUGH-HOLE | 1.27 mm | unknown | R-PZIP-T28 | Not Qualified | COMMERCIAL | 0.105 mA | 512KX8 | 3-STATE | 8 | 0.00015 A | 4194304 bit | COMMON | FAST PAGE DRAM | 1024 | YES | |||||||||||||||||||||||||||||
![]() | Mfr Part No K4H560438E-TCA2 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 2.5 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.24 mA | 64MX4 | 3-STATE | 1.2 mm | 4 | 0.003 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||||||||||||||
![]() | Mfr Part No S-93C56AMFN | Seiko Epson Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 0.25 MHz | SEIKO EPSON CORP | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Obsolete | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.65 mm | unknown | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 128X16 | 1.3 mm | 16 | 2048 bit | SERIAL | EEPROM | MICROWIRE | 10 ms | 2.95 mm | 2.8 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No S-93C56AMFN | Epson Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 0.25 MHz | SEIKO EPSON CORP | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | LSSOP | LSSOP, | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Obsolete | MSOP | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.65 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 128X16 | 1.3 mm | 16 | 2048 bit | SERIAL | EEPROM | MICROWIRE | 10 ms | 2.95 mm | 2.8 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No S-93C56AMFN | ABLIC Inc. | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 2 MHz | SEIKO INSTRUMENTS USA INC | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | LSSOP | LSSOP, SSOP8,.16 | SSOP8,.16 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | Obsolete | MSOP | No | 2.5 V | e0 | EAR99 | TIN LEAD | DATA RETENTION: 10 YEARS | 8542.32.00.51 | DUAL | GULL WING | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.002 mA | 128X16 | 1.3 mm | 16 | 4e-7 A | 2048 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 10 ms | 10 | SOFTWARE | 2.95 mm | 2.8 mm | ||||||||||||||||
![]() | Mfr Part No KM416V4104AS-5 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 50 | 50 ns | SAMSUNG SEMICONDUCTOR INC | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.15 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 4096 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | ||||||||||||||||
![]() | Mfr Part No NT5CB64M16AP-DG | Nanya Technology Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 20 ns | 800 MHz | NANYA TECHNOLOGY CORP | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 64MX16 | 3-STATE | 1.39 mm | 16 | 1073741824 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | ||||||||||||||||
![]() | Mfr Part No MT5C1009CW-70 | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 32 | 70 ns | MICRON TECHNOLOGY INC | 131072 words | 128000 | 70 °C | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T32 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.105 mA | 128KX8 | 3-STATE | 8 | 0.007 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||
![]() | Mfr Part No T2316162A-50J | TM Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 50 ns | TM TECHNOLOGY INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | 5 V | EAR99 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.18 mA | 1MX16 | 3-STATE | 3.759 mm | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | EDO PAGE | NO | 27.305 mm | 10.16 mm | ||||||||||||||||||||||
![]() | Mfr Part No IM65X08AIJE | General Electric Solid State | Datasheet | - | - | Min: 1 Mult: 1 | NO | 16 | 200 ns | GENERAL ELECTRIC SOLID STATE | 1024 words | 1000 | 85 °C | -40 °C | CERAMIC | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T16 | Not Qualified | INDUSTRIAL | SYNCHRONOUS | 0.01 mA | 1KX1 | 3-STATE | 1 | 0.00005 A | 1024 bit | PARALLEL | STANDARD SRAM | 2 V | ||||||||||||||||||||||||||||
![]() | Mfr Part No K4S56163LF-XN75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 5.4 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.24 | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | Not Qualified | OTHER | 0.165 mA | 16MX16 | 3-STATE | 16 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||
![]() | Mfr Part No R1EX25512ATA00I | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 5 MHz | RENESAS ELECTRONICS CORP | 65536 words | 64000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | 4.40 X 3 MM, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSSOP-8 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | SOIC | Yes | 3.3 V | Yes | EAR99 | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | NOT SPECIFIED | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.005 mA | 64KX8 | 1.1 mm | 8 | 0.000005 A | 524288 bit | SERIAL | EEPROM | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | 4.4 mm | 3 mm | ||||||||||||||||
![]() | Mfr Part No K4M64163PH-RF75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 54 | 6 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 4194304 words | 4000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | No | 1.8 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | Not Qualified | OTHER | 0.06 mA | 4MX16 | 3-STATE | 16 | 0.0003 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||
![]() | Mfr Part No MCM2167HP55 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | NO | 20 | 55 ns | MOTOROLA INC | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T20 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.12 mA | 16KX1 | 3-STATE | 1 | 16384 bit | PARALLEL | SEPARATE | STANDARD SRAM | |||||||||||||||||||||||||||||||
![]() | Mfr Part No M5M5179P-35 | Mitsubishi Electric | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 35 ns | MITSUBISHI ELECTRIC CORP | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.12 mA | 8KX9 | 3-STATE | 9 | 0.002 A | 73728 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | ||||||||||||||||||||
![]() | Mfr Part No P4C188-15PC | Pyramid Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 15 ns | PYRAMID SEMICONDUCTOR CORP | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.16 mA | 16KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 29.337 mm | 7.62 mm | |||||||||||||||||||
![]() | Mfr Part No TC511665BJ-80 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 80 ns | TOSHIBA CORP | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 40 | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 64KX16 | 3.7 mm | 16 | 1048576 bit | FAST PAGE DRAM | 256 | FAST PAGE | 26.04 mm | 10.16 mm |
KM416C254DT-6
Samsung Semiconductor
Package:Memory
Price: please inquire
CAT25C32U
Catalyst Semiconductor
Package:Memory
Price: please inquire
AT27C256R-70DC
Atmel Corporation
Package:Memory
Price: please inquire
UPD42S4800V-70
Renesas Electronics Corporation
Package:Memory
Price: please inquire
K4H560438E-TCA2
Samsung Semiconductor
Package:Memory
Price: please inquire
S-93C56AMFN
Seiko Epson Corporation
Package:Memory
Price: please inquire
S-93C56AMFN
Epson Electronics America Inc
Package:Memory
Price: please inquire
S-93C56AMFN
ABLIC Inc.
Package:Memory
Price: please inquire
KM416V4104AS-5
Samsung Semiconductor
Package:Memory
Price: please inquire
NT5CB64M16AP-DG
Nanya Technology Corporation
Package:Memory
Price: please inquire
MT5C1009CW-70
Micron Technology Inc
Package:Memory
Price: please inquire
T2316162A-50J
TM Technology Inc
Package:Memory
Price: please inquire
IM65X08AIJE
General Electric Solid State
Package:Memory
Price: please inquire
K4S56163LF-XN75
Samsung Semiconductor
Package:Memory
Price: please inquire
R1EX25512ATA00I
Renesas Electronics Corporation
Package:Memory
Price: please inquire
K4M64163PH-RF75
Samsung Semiconductor
Package:Memory
Price: please inquire
MCM2167HP55
Motorola Semiconductor Products
Package:Memory
Price: please inquire
M5M5179P-35
Mitsubishi Electric
Package:Memory
Price: please inquire
P4C188-15PC
Pyramid Semiconductor Corporation
Package:Memory
Price: please inquire
TC511665BJ-80
Toshiba America Electronic Components
Package:Memory
Price: please inquire
