The category is 'Memory'
Memory (6000)
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- ECCN Code:
EAR99
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr Part No K4S56323LF-FC75 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 6 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.24 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B90 | Not Qualified | OTHER | 0.18 mA | 8MX32 | 32 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No PDM41258S20D | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 20 ns | PARADIGM TECHNOLOGY INC | 65536 words | 64000 | 70 °C | CERAMIC | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T24 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.18 mA | 64KX4 | 3-STATE | 4 | 0.03 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD4218165LG5-A60-7JF | NEC Electronics Group | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | NEC ELECTRONICS CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | 3.3 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 1MX16 | 3-STATE | 1.2 mm | 16 | 16777216 bit | EDO DRAM | 1024 | FAST PAGE WITH EDO | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No KM48V8004AK-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 32 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.14 mA | 8MX8 | 3-STATE | 3.76 mm | 8 | 0.0005 A | 67108864 bit | COMMON | EDO DRAM | 8192 | FAST PAGE WITH EDO | NO | 20.96 mm | 10.16 mm | |||||||||||||||||||||||
![]() | Mfr Part No S-24C01ADPA-01 | Epson Electronics America Inc | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | 0.1 MHz | SEIKO EPSON CORP | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, | RECTANGULAR | IN-LINE | Obsolete | DIP | EAR99 | DATA RETENTION 10 YEARS; 100K ENDURANCE CYCLES | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 8 | R-PDIP-T8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 128X8 | 4.5 mm | 8 | 1024 bit | SERIAL | EEPROM | I2C | 100000 Write/Erase Cycles | 5 ms | 10 | 9.3 mm | 7.62 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No S-24C01ADPA-01 | Seiko Epson Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | 0.1 MHz | SEIKO EPSON CORP | 128 words | 128 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, | RECTANGULAR | IN-LINE | Obsolete | EAR99 | DATA RETENTION 10 YEARS; 100K ENDURANCE CYCLES | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 128X8 | 4.5 mm | 8 | 1024 bit | SERIAL | EEPROM | I2C | 100000 Write/Erase Cycles | 5 ms | 10 | 9.3 mm | 7.62 mm | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No HY5DU561622DT-D43 | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.7 ns | 200 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP2 | No | 2.6 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | unknown | NOT SPECIFIED | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.5 V | 1 | SYNCHRONOUS | 0.25 mA | 16MX16 | 3-STATE | 1.194 mm | 16 | 0.01 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.225 mm | 10.16 mm | |||||||||||||||||||||
![]() | Mfr Part No H5MS1G62MFP-L3M | SK Hynix Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 7 ns | 100 MHz | SK HYNIX INC | 67108864 words | 64000000 | 85 °C | -30 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA60,9X10,32 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.07 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.0004 A | 1073741824 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | ||||||||||||||||||
![]() | Mfr Part No HYB18T1G800AF-5 | Qimonda AG | Datasheet | - | - | Min: 1 Mult: 1 | YES | 68 | 0.6 ns | 200 MHz | QIMONDA AG | 3 | 134217728 words | 128000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA68,9X19,32 | BGA68,9X19,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 68 | R-PBGA-B68 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 20 mm | 10 mm | ||||||||||||||||||||||||
![]() | Mfr Part No XC1736ESOG8I | AMD Xilinx | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | XILINX INC | 3 | 36288 words | 36288 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | 5 V | e3 | EAR99 | Matte Tin (Sn) | USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS | 8542.32.00.51 | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 40 | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | SYNCHRONOUS | 36288X1 | 1.7272 mm | 1 | 36288 bit | SERIAL | CONFIGURATION MEMORY | 4.9276 mm | 3.937 mm | |||||||||||||||||||||||||||||
![]() | Mfr Part No KM416V1204BT-6 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 44 | 60 ns | SAMSUNG SEMICONDUCTOR INC | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44/50,.46,32 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 50 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.15 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.0005 A | 16777216 bit | COMMON | EDO DRAM | 1024 | FAST PAGE WITH EDO | NO | 20.95 mm | 10.16 mm | |||||||||||||||||||||||
![]() | Mfr Part No TMM41256P-15 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | NO | 16 | 150 ns | TOSHIBA CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP16,.3 | DIP16,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T16 | Not Qualified | COMMERCIAL | 256KX1 | 3-STATE | 1 | 262144 bit | SEPARATE | FAST PAGE DRAM | 256 | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No PDM41256LA15SO | Paradigm Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | PARADIGM TECHNOLOGY INC | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | unknown | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 32KX8 | 3-STATE | 8 | 0.0005 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | ||||||||||||||||||||||||||||||
![]() | Mfr Part No EDD51323CBH-6DLS-E | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5 ns | ELPIDA MEMORY INC | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 16MX32 | 1.08 mm | 32 | 536870912 bit | DDR DRAM | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD424260G5-60 | NEC Electronics Group | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 60 ns | NEC ELECTRONICS CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSOP2 | , | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.8 mm | unknown | 44 | R-PDSO-G40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 256KX16 | 3-STATE | 1.2 mm | 16 | 4194304 bit | FAST PAGE DRAM | 512 | FAST PAGE | 18.41 mm | 10.16 mm | ||||||||||||||||||||||||||||||||
![]() | Mfr Part No CAT28C64BW-15 | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 150 ns | CATALYST SEMICONDUCTOR INC | 1 | 8192 words | 8000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 5 V | e3 | EAR99 | MATTE TIN | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 2.65 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 1000000 Write/Erase Cycles | 5 ms | YES | YES | NO | 32 words | 17.9 mm | 7.5 mm | ||||||||||||||||||||||
![]() | Mfr Part No IS45VM32400E-75BLA1 | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.4 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.000015 A | 134217728 bit | AEC-Q100 | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||
![]() | Mfr Part No CAT24WC32JI | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 0.1 MHz | CATALYST SEMICONDUCTOR INC | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | EAR99 | TIN LEAD | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.003 mA | 4KX8 | 1.75 mm | 8 | 0.000001 A | 32768 bit | AEC-Q100 | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | 1010DDDR | 4.9 mm | 3.9 mm | ||||||||||||||||||||||
![]() | Mfr Part No S-29L330AFS-TB | ABLIC Inc. | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | SEIKO INSTRUMENTS USA INC | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | SSOP | SSOP, SSOP8,.25 | SSOP8,.25 | RECTANGULAR | SMALL OUTLINE, SHRINK PITCH | Obsolete | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 0.635 mm | unknown | R-PDSO-G8 | Not Qualified | INDUSTRIAL | 0.002 mA | 256X16 | 16 | 4e-7 A | 4096 bit | SERIAL | EEPROM | MICROWIRE | 100000 Write/Erase Cycles | 10 | SOFTWARE | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD424260LE-70L | Renesas Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 70 ns | RENESAS ELECTRONICS CORP | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | unknown | R-PDSO-J40 | Not Qualified | COMMERCIAL | 0.16 mA | 256KX16 | 3-STATE | 16 | 0.0002 A | 4194304 bit | COMMON | FAST PAGE DRAM | 512 | NO |
K4S56323LF-FC75
Samsung Semiconductor
Package:Memory
Price: please inquire
PDM41258S20D
Paradigm Technology Inc
Package:Memory
Price: please inquire
UPD4218165LG5-A60-7JF
NEC Electronics Group
Package:Memory
Price: please inquire
KM48V8004AK-6
Samsung Semiconductor
Package:Memory
Price: please inquire
S-24C01ADPA-01
Epson Electronics America Inc
Package:Memory
Price: please inquire
S-24C01ADPA-01
Seiko Epson Corporation
Package:Memory
Price: please inquire
HY5DU561622DT-D43
SK Hynix Inc
Package:Memory
Price: please inquire
H5MS1G62MFP-L3M
SK Hynix Inc
Package:Memory
Price: please inquire
HYB18T1G800AF-5
Qimonda AG
Package:Memory
Price: please inquire
XC1736ESOG8I
AMD Xilinx
Package:Memory
Price: please inquire
KM416V1204BT-6
Samsung Semiconductor
Package:Memory
Price: please inquire
TMM41256P-15
Toshiba America Electronic Components
Package:Memory
Price: please inquire
PDM41256LA15SO
Paradigm Technology Inc
Package:Memory
Price: please inquire
EDD51323CBH-6DLS-E
Elpida Memory Inc
Package:Memory
Price: please inquire
UPD424260G5-60
NEC Electronics Group
Package:Memory
Price: please inquire
CAT28C64BW-15
Catalyst Semiconductor
Package:Memory
Price: please inquire
IS45VM32400E-75BLA1
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
CAT24WC32JI
Catalyst Semiconductor
Package:Memory
Price: please inquire
S-29L330AFS-TB
ABLIC Inc.
Package:Memory
Price: please inquire
UPD424260LE-70L
Renesas Electronics Corporation
Package:Memory
Price: please inquire
