The category is 'Memory'
Memory (6000)
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- ECCN Code:
EAR99
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Page Size | Ready/Busy | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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 | Mfr Part No M53D1G3232A-5BG | Elite Semiconductor Memory Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | Contact Manufacturer | Yes | EAR99 | NOT SPECIFIED | unknown | NOT SPECIFIED | DDR DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No EDJ1108BASE-DJ-E | Elpida Memory Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.225 ns | 667 MHz | ELPIDA MEMORY INC | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.5 V | e1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.335 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 8.6 mm | |||||||||||||||||||
 | Mfr Part No P4C1256-15JI | Pyramid Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 28 | 15 ns | PYRAMID SEMICONDUCTOR CORP | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.300 INCH, PLASTIC, SOJ-28 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | J BEND | 1 | 1.27 mm | compliant | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.17 mA | 32KX8 | 3-STATE | 3.7592 mm | 8 | 0.01 A | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | 18.161 mm | 7.5184 mm | |||||||||||||||||||||||
 | Mfr Part No CAT24FC32API | Catalyst Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | NO | 8 | 0.4 MHz | CATALYST SEMICONDUCTOR INC | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 2.5 V | e0 | EAR99 | TIN LEAD | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.003 mA | 4KX8 | 4.57 mm | 8 | 9e-7 A | 32768 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | 1010DDDR | 9.59 mm | 7.62 mm | |||||||||||||||||||||
 | Mfr Part No AT24C256CN-SH-B | Atmel Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 0.4 MHz | ATMEL CORP | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 2.5 V | e4 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.003 mA | 32KX8 | 1.75 mm | 8 | 0.000001 A | 262144 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 40 | HARDWARE/SOFTWARE | 1010DDDR | 4.9 mm | 3.9 mm | |||||||||||||||||||||
| Mfr Part No K4S56323LF-FR1L | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 7 ns | 111 MHz | SAMSUNG SEMICONDUCTOR INC | 8388608 words | 8000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | No | 2.5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.24 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B90 | Not Qualified | OTHER | 0.15 mA | 8MX32 | 32 | 0.0005 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||
| Mfr Part No MCM2016HY70 | Motorola Semiconductor Products | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 70 ns | MOTOROLA INC | 2048 words | 2000 | 70 °C | CERAMIC | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T24 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.135 mA | 2KX8 | 3-STATE | 8 | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | ||||||||||||||||||||||||||||||||||||
 | Mfr Part No IS41C44052C-50CTGI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 50 ns | INTEGRATED SILICON SOLUTION INC | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | RECTANGULAR | SMALL OUTLINE | Obsolete | TSSOP2 | Yes | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | compliant | NOT SPECIFIED | 24 | R-PDSO-G24 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | SYNCHRONOUS | 4MX4 | 1.2 mm | 4 | 16777216 bit | FAST PAGE DRAM | FAST PAGE | 17.14 mm | 7.62 mm | ||||||||||||||||||||||||||||
 | Mfr Part No M28C64C-150P6 | STMicroelectronics | Datasheet | - | - | Min: 1 Mult: 1 | NO | 28 | 150 ns | STMICROELECTRONICS | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, DIP28,.6 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | EAR99 | TIN LEAD | 32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 8KX8 | 3-STATE | 5.08 mm | 8 | 0.0001 A | 65536 bit | PARALLEL | EEPROM | 5 V | 100000 Write/Erase Cycles | 5 ms | 40 | YES | YES | NO | 32 words | YES | 37.085 mm | 15.24 mm | ||||||||||||||||
| Mfr Part No UM6116M-2L | United Microelectronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 24 | 120 ns | UNITED MICROELECTRONICS CORP | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | SOP | SOP, SOP24,.4 | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | DUAL | GULL WING | 1.27 mm | unknown | R-PDSO-G24 | Not Qualified | COMMERCIAL | ASYNCHRONOUS | 0.05 mA | 2KX8 | 3-STATE | 8 | 0.000001 A | 16384 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | |||||||||||||||||||||||||||||||||
 | Mfr Part No UPD42S18160LE-60 | NEC Electronics Group | Datasheet | - | - | Min: 1 Mult: 1 | YES | 42 | 60 ns | NEC ELECTRONICS CORP | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5 V | EAR99 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 42 | R-PDSO-J42 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 1MX16 | 3-STATE | 3.7 mm | 16 | 16777216 bit | FAST PAGE DRAM | 1024 | FAST PAGE | 27.56 mm | 10.16 mm | ||||||||||||||||||||||||||||||
| Mfr Part No MT46V8M16TG-75E | Micron Technology Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 66 | 0.75 ns | 133 MHz | MICRON TECHNOLOGY INC | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | TSSOP | 0.400 INCH, PLASTIC, TSOP-66 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP | No | 2.5 V | e0 | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 1 | 0.65 mm | not_compliant | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.375 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 134217728 bit | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||
| Mfr Part No FM24C128A-MS-U-G | Shanghai Fudan Microelectronics Group Co Limited | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | SHANGHAI FUDAN MICROELECTRONICS CO LTD | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.19 | TSSOP8,.19 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Contact Manufacturer | Yes | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 0.635 mm | unknown | R-PDSO-G8 | Not Qualified | INDUSTRIAL | 0.003 mA | 16KX8 | 8 | 0.000001 A | 131072 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 40 | HARDWARE | 1010DDDR | |||||||||||||||||||||||||||||||||||
| Mfr Part No MCM514256BJ60 | Motorola Mobility LLC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 20 | 60 ns | MOTOROLA INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ20/26,.34 | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 20 | R-PDSO-J20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 256KX4 | 3-STATE | 3.75 mm | 4 | 0.001 A | 1048576 bit | COMMON | FAST PAGE DRAM | 512 | FAST PAGE | 17.145 mm | 7.62 mm | ||||||||||||||||||||||||
 | Mfr Part No TMM2018AP-45 | Toshiba America Electronic Components | Datasheet | - | - | Min: 1 Mult: 1 | NO | 24 | 45 ns | TOSHIBA CORP | 2048 words | 2000 | 70 °C | PLASTIC/EPOXY | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | LOW POWER STANDBY MODE | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.135 mA | 2KX8 | 3-STATE | 5 mm | 8 | 16384 bit | PARALLEL | COMMON | CACHE SRAM | 7.62 mm | ||||||||||||||||||||||||||
| Mfr Part No S-93C66BD0I-J8T1 | ABLIC Inc. | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 2 MHz | SEIKO INSTRUMENTS USA INC | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 2.5 V | EAR99 | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.002 mA | 256X16 | 1.75 mm | 16 | 0.0000015 A | 4096 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 8 ms | 10 | SOFTWARE | 5.02 mm | 3.9 mm | |||||||||||||||||||||||||
| Mfr Part No S-29L330ADFE-TB | ABLIC Inc. | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | SEIKO INSTRUMENTS USA INC | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | LSOP | LSOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.51 | DUAL | GULL WING | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.002 mA | 256X16 | 3-STATE | 1.7 mm | 16 | 4e-7 A | 4096 bit | SERIAL | EEPROM | MICROWIRE | 100000 Write/Erase Cycles | 10 | SOFTWARE | 5.2 mm | 4.4 mm | ||||||||||||||||||||||
| Mfr Part No KM416C254BLJ-5 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 50 ns | SAMSUNG SEMICONDUCTOR INC | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | unknown | 40 | R-PDSO-J40 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | 1 | ASYNCHRONOUS | 0.11 mA | 256KX16 | 3-STATE | 3.76 mm | 16 | 0.0002 A | 4194304 bit | COMMON | EDO DRAM | 512 | FAST PAGE WITH EDO | NO | 26.04 mm | 10.16 mm | |||||||||||||||||||||
 | Mfr Part No P4C188-15CC | Pyramid Semiconductor Corporation | Datasheet | - | - | Min: 1 Mult: 1 | NO | 22 | 15 ns | PYRAMID SEMICONDUCTOR CORP | 16384 words | 16000 | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-22 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | 8542.32.00.41 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 22 | R-CDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 16KX4 | 5.08 mm | 4 | 65536 bit | PARALLEL | STANDARD SRAM | 29.337 mm | 7.62 mm | ||||||||||||||||||||||||||||||
| Mfr Part No IS41C16256-25KI | Integrated Silicon Solution Inc | Datasheet | - | - | Min: 1 Mult: 1 | YES | 40 | 25 ns | INTEGRATED SILICON SOLUTION INC | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Active | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.02 | DUAL | J BEND | 1.27 mm | compliant | R-PDSO-J40 | Not Qualified | INDUSTRIAL | 0.26 mA | 256KX16 | 3-STATE | 16 | 0.001 A | 4194304 bit | COMMON | EDO DRAM | 512 | NO |
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M53D1G3232A-5BG
Elite Semiconductor Memory Technology Inc
Package:Memory
Price: please inquire
-
EDJ1108BASE-DJ-E
Elpida Memory Inc
Package:Memory
Price: please inquire
-
P4C1256-15JI
Pyramid Semiconductor Corporation
Package:Memory
Price: please inquire
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CAT24FC32API
Catalyst Semiconductor
Package:Memory
Price: please inquire
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AT24C256CN-SH-B
Atmel Corporation
Package:Memory
Price: please inquire
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K4S56323LF-FR1L
Samsung Semiconductor
Package:Memory
Price: please inquire
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MCM2016HY70
Motorola Semiconductor Products
Package:Memory
Price: please inquire
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IS41C44052C-50CTGI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire
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M28C64C-150P6
STMicroelectronics
Package:Memory
Price: please inquire
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UM6116M-2L
United Microelectronics Corporation
Package:Memory
Price: please inquire
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UPD42S18160LE-60
NEC Electronics Group
Package:Memory
Price: please inquire
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MT46V8M16TG-75E
Micron Technology Inc
Package:Memory
Price: please inquire
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FM24C128A-MS-U-G
Shanghai Fudan Microelectronics Group Co Limited
Package:Memory
Price: please inquire
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MCM514256BJ60
Motorola Mobility LLC
Package:Memory
Price: please inquire
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TMM2018AP-45
Toshiba America Electronic Components
Package:Memory
Price: please inquire
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S-93C66BD0I-J8T1
ABLIC Inc.
Package:Memory
Price: please inquire
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S-29L330ADFE-TB
ABLIC Inc.
Package:Memory
Price: please inquire
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KM416C254BLJ-5
Samsung Semiconductor
Package:Memory
Price: please inquire
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P4C188-15CC
Pyramid Semiconductor Corporation
Package:Memory
Price: please inquire
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IS41C16256-25KI
Integrated Silicon Solution Inc
Package:Memory
Price: please inquire