The category is 'Memory'
Memory (5)
- All Manufacturers
- Composition
- Features
- Length
- Max Power Dissipation
- Number of Terminations
- Resistance
- RoHS
- Temperature Coefficient
- Tolerance
- Width
- Failure Rate
- Max Operating Temperature
- Max Power Dissipation:
100 mW
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Risk Rank | RoHS | Rohs Code | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Series | Tolerance | Number of Terminations | ECCN Code | Temperature Coefficient | Type | Resistance | Max Operating Temperature | Min Operating Temperature | Composition | HTS Code | Subcategory | Power Rating | Max Power Dissipation | Technology | Voltage - Supply | Terminal Position | Terminal Form | Number of Functions | Terminal Pitch | Reach Compliance Code | Military Standard | Pin Count | JESD-30 Code | Qualification Status | Case Code (Metric) | Case Code (Imperial) | Failure Rate | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Product Type | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | I2C Control Byte | Features | Product Category | Memory Organization | Diameter | Height | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No SG564163574NZBSRCC | Smart Global Holdings | Datasheet | - | - | Min: 1 Mult: 1 | Non-Compliant | 0.1 % | 2 | 50 ppm/°C | 40.2 Ω | 150 °C | -55 °C | Thin Film | 100 mW | 1608 | 0603 | 0.01 % | Military | 838.2 µm | 1.6256 mm | 812.8 µm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AS4C512M8D4-83BINTR | Alliance Memory | Datasheet | - | - | Min: 1 Mult: 1 | Lead, Tin | Through Hole | Surface Mount | 78-TFBGA | 78-FBGA (7.5x10.6) | Alliance Memory | 2500 | Alliance Memory | 1.2 GHz | + 95 C | Volatile | Alliance Memory, Inc. | - 40 C | Yes | SMD/SMT | Tape & Reel (TR) | Active | Non-Compliant | 1.26 V | 1.14 V | -40°C ~ 95°C (TC) | Tape & Reel (TR) | - | 0.1 % | 2 | 50 ppm/°C | SDRAM - DDR4 | 432 Ω | 175 °C | -65 °C | Metal Film | Memory & Data Storage | 100 mW | 100 mW | SDRAM - DDR4 | 1.14V ~ 1.26V | MIL-PRF-55182 | 4Gbit | 1.2 GHz | 79 mA | 18 ns | DRAM | POD | 8 bit | 512 M x 8 | 15ns | DRAM | Military, Moisture Resistant, Weldable | DRAM | 512M x 8 | 1.78 mm | 3.81 mm | 1.78 mm | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No AT24C02BU3-UU-T | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | Lead, Tin | Through Hole | YES | 8 | 0.4 MHz | ATMEL CORP | Atmel Corporation | AT24C02BU3-UU-T | 256 words | 256 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA8,2X4,40/20 | BGA8,2X4,40/20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 8.35 | Non-Compliant | Yes | 2.5 V | Tape & Reel (TR) | 1 % | 2 | EAR99 | 25 ppm/°C | 442 kΩ | 175 °C | -65 °C | Metal Film | 8542.32.00.51 | EEPROMs | 100 mW | 100 mW | CMOS | BOTTOM | BALL | 1 | 0.5 mm | unknown | MIL-PRF-55182 | 8 | R-PBGA-B8 | Not Qualified | 0.001 % | 5.5 V | 2/5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.003 mA | 256X8 | 0.91 mm | 8 | 0.000003 A | 2048 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | 1010DDDR | Military, Moisture Resistant, Weldable | 1.78 mm | 3.81 mm | 1.78 mm | No | Contains Lead | ||||||||||||||||||||||||||||||||||
| Mfr Part No 96FMSD-32G-EM-AT | Advantech | Datasheet | - | - | Min: 1 Mult: 1 | Advantech | 1 | Advantech | Non-Compliant | Tape & Reel (TR) | 0.1 % | 2 | 25 ppm/°C | 475 Ω | Metal Film | Memory & Data Storage | 100 mW | 100 mW | 0.001 % | Memory Cards | Military, Moisture Resistant, Weldable | Memory Cards | 3.81 mm | 1.78 mm | Contains Lead | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No CG8415AA | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | Infineon Technologies | Tray | Obsolete | Non-Compliant | - | 1 % | 2 | 25 ppm/°C | 226 Ω | 150 °C | -55 °C | Thin Film | 100 mW | 1608 | 0603 | 0.01 % | Military | 838.2 µm | 1.6256 mm | 812.8 µm |
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SG564163574NZBSRCC
Smart Global Holdings
Package:Memory
Price: please inquire
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AS4C512M8D4-83BINTR
Alliance Memory
Package:Memory
Price: please inquire
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AT24C02BU3-UU-T
Microchip
Package:Memory
Price: please inquire
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96FMSD-32G-EM-AT
Advantech
Package:Memory
Price: please inquire
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CG8415AA
Infineon
Package:Memory
Price: please inquire