The category is 'Memory'
Memory (5)
- All Manufacturers
- Access Time
- Interface Type
- Maximum Clock Frequency
- Maximum Clock Rate
- Maximum Operating Supply Voltage
- Maximum Operating Temperature
- Memory Size
- Minimum Operating Supply Voltage
- Minimum Operating Temperature
- Mounting Styles
- Number of I/O Lines
- Operating Temperature
- Operating Temperature:
-40 to 70 °C
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Brand | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Package Description | Part Life Cycle Code | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | Type | Subcategory | Reach Compliance Code | Pin Count | Memory Size | Number of Ports | Supply Current-Max | Access Time | Architecture | Organization | Address Bus Width | Product Type | Density | Memory Density | Screening Level | Product Category |
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![]() | Mfr Part No GS8161E36DGT-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161E36DGT-400I | 400 MHz | 400 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | , | Active | 5.8 | Details | Yes | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 70 °C | Tray | GS8161E36DGT | DCD Pipeline/Flow Through | Memory & Data Storage | compliant | 100 | 18 Mbit | 4 | 300 mA, 385 mA | 4 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM | ||
![]() | Mfr Part No GS8161E18DGT-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 333 MHz | 333 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 70 °C | Tray | GS8161E18DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 100 | 18 Mbit | 2 | 260 mA, 305 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | SRAM | 18 Mbit | Industrial | SRAM | ||||||||||
![]() | Mfr Part No GS8161E18DGT-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | GSI Technology | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161E18DGT-400I | 400 MHz | 400 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | SMD/SMT | 18 Bit | , | Active | 5.8 | Details | Yes | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 70 °C | Tray | GS8161E18DGT | DCD Pipeline/Flow Through | Memory & Data Storage | compliant | 100 | 18 Mbit | 275 mA, 355 mA | 4 | 1 M x 18 | SRAM | 18 | Industrial | SRAM | ||||||||
![]() | Mfr Part No GS8161E18DGT-375I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | SDR | Parallel | 375 MHz | 375 MHz | 2.7, 3.6 V | + 85 C | 2.3, 3 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | TQFP | 3.6 V | 2.3 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 70 °C | 100 | 18 Mbit | 2 | 270 mA, 340 mA | 4.2 ns | Flow-Through/Pipelined | 1 M x 18 | 20 Bit | 18 Mbit | Industrial | |||||||||||||||||||||||
![]() | Mfr Part No GS8161E36DGT-375I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 375 MHz | 375 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 70 °C | Tray | GS8161E36DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 100 | 18 Mbit | 4 | 290 mA, 370 mA | 4.2 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM |
GS8161E36DGT-400I
GSI Technology
Package:Memory
Price: please inquire
GS8161E18DGT-333I
GSI Technology
Package:Memory
Price: please inquire
GS8161E18DGT-400I
GSI Technology
Package:Memory
Price: please inquire
GS8161E18DGT-375I
GSI Technology
Package:Memory
Price: please inquire
GS8161E36DGT-375I
GSI Technology
Package:Memory
Price: please inquire
