Memory (880)

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

10

Parallel

GSI Technology

200 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

4 MWords

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

119

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

SRAM

144 Mbit

Industrial

SRAM

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

21

Parallel

GSI Technology

333 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

Compliant

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS816218DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

119

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 b

SRAM

18 Mbit

Industrial

SRAM

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AGB-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS8322Z18AGB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

6.5 ns

GS8642Z

GSI Technology

250 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36GB-250I

200 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

4.64

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

3.451645 oz

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

2M x 36

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36B-200IV

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

4.78

No

FBGA

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z36B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

SDR

Parallel

200 MHz

200 MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

8 MWords

FBGA

3.6 V

2.3 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 85 °C

119

144 Mbit

2

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

144 Mbit

Industrial

-

-

Min: 1

Mult: 1

12 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS8128418B-200IV

200 MHz

200 MHz

2, 2.7 V

+ 85 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.19

No

3.6 V

2.3 V

1.8 V

Synchronous

SyncBurst

1.8, 2.5 V

Industrial grade

-40 to 85 °C

Tray

GS8128418B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

INDUSTRIAL

1.7 V

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

8 M x 18

1.99 mm

18

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.2 ns

GSI Technology

375 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AB-375M

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 125 C

SDR

2.3, 3 V

- 55 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

125 °C

-55 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

5.55

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Military grade

-55 to 125 °C

Tray

GS8322Z18AB

3A991.B.2.B

NBT Pipeline/Flow Through

ALSO OPERATES AT 3.3 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

MILITARY

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 360 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.09 A

37748736 bit

Military

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

84

Parallel

GSI Technology

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

3.6 V

2.3 V

NBT SRAM

Tray

GS842Z18CB

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

165 mA, 200 mA

5.5 ns

256 k x 18

SRAM

SRAM

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

10

Parallel

GSI Technology

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

4 MWords

Details

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

119

144 Mbit

4

380 mA, 500 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

-

-

Min: 1

Mult: 1

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81284Z18B-200I

200 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.21

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS81284Z18B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8MX18

1.99 mm

18

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

12 Weeks

BGA-119

YES

119

10 ns

GSI Technology

21

GSI TECHNOLOGY

Parallel

GSI Technology

GS78132AB-10I

3.6 V

+ 85 C

SDR

3 V

- 40 C

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.23

N

No

FBGA

3.6 V

3 V

3.3 V

Asynchronous

3.3000 V

Industrial grade

-40 to 85 °C

GS78132AB

e0

No

3A991.B.2.B

Asynchronous

TIN LEAD

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

3.6 V

INDUSTRIAL

3 V

8 Mbit

4

ASYNCHRONOUS

230 mA

10 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

STANDARD SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

YES

119

8 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81284Z18B-167I

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.21

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS81284Z18B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

INDUSTRIAL

2.3 V

144 Mbit

2

SYNCHRONOUS

350 mA, 400 mA

8 ns

Flow-Through/Pipelined

8MX18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

10

Parallel

GSI Technology

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

4 MWords

N

FBGA

3.6 V

2.3 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

119

144 Mbit

4

380 mA, 500 mA

6.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

-

-

Min: 1

Mult: 1

7 Weeks, 5 Days

BGA-119

YES

48

8 ns

GSI Technology

135

GSI TECHNOLOGY

Parallel

GSI Technology

GS74117AGX-8I

3.6 V

+ 85 C

SDR

3 V

- 40 C

3

SMD/SMT

16 Bit

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

TFBGA, BGA48,6X8,30

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

BGA

NOT SPECIFIED

5.22

Details

Yes

3.6 V

3 V

3.3 V

Asynchronous

3.3000 V

-40 to 85 °C

GS74117AGX

e1

Yes

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

85 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

Not Qualified

3.3 V

3.6 V

3.3 V

INDUSTRIAL

3 V

4 Mbit

1

ASYNCHRONOUS

140 mA

8

256 k x 16

3-STATE

1.2 mm

16

18 b

SRAM

4 Mb

0.02 A

4

PARALLEL

COMMON

STANDARD SRAM

3 V

SRAM

10 mm

6 mm

No

-

-

Min: 1

Mult: 1

12 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS8128418B-250

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.22

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8128418B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

COMMERCIAL

2.3 V

144 Mbit

2

SYNCHRONOUS

355 mA, 455 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

BGA-119

YES

119

7.5 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS8128418GB-200

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

8 MWords

8000000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.19

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8128418GB

e1

Yes

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

COMMERCIAL

2.3 V

144 Mbit

2

SYNCHRONOUS

325 mA, 400 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

YES

119

8 ns

GSI Technology

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS81284Z18B-167V

167 MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

SMD/SMT

18 Bit

8 MWords

8000000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.34

N

No

FBGA

3.6 V

2.3 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

0 to 70 °C

Tray

GS81284Z18B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2 V

COMMERCIAL

1.7 V

144 Mbit

SYNCHRONOUS

315 mA, 365 mA

8@Flow-Through/3.4@P

8 M x 18

1.99 mm

18

SRAM

144

PARALLEL

ZBT SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

12 Weeks

BGA-119

YES

119

8 ns

GSI Technology

SDR

10

GSI TECHNOLOGY

Parallel

GSI Technology

GS8128436GB-167

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

4 MWords

4000000

70 °C

PLASTIC/EPOXY

BGA

BGA,

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

4.63

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8128436GB

e1

Yes

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

COMMERCIAL

2.3 V

144 Mbit

4

SYNCHRONOUS

340 mA, 395 mA

8 ns

Flow-Through/Pipelined

4 M x 36

1.99 mm

36

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

CACHE SRAM

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

BGA-119

GSI Technology

SDR

10

Parallel

GSI Technology

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

4 MWords

FBGA

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8128436B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

119

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM