The category is 'Memory'
Memory (880)
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BGA-119
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS864218GB-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864218GB-300I | 300 MHz | 181.8@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.17 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864218GB | e1 | Yes | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 2 | SYNCHRONOUS | 290 mA, 390 mA | 5.5 ns | Flow-Through/Pipelined | 4 M x 18 | 1.99 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | |||||||||||
![]() | Mfr Part No GS832218AB-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | 400 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-400I | 400 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.1 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832218AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 285 mA, 375 mA | 4 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||
![]() | Mfr Part No GS8322Z36AGB-375 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4.2 ns | GSI Technology | 375 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AGB-375 | 375 MHz | 238@Flow-Through/375@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z36AGB | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 270 mA, 380 mA | 4.2 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS8128436GB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 10 | Parallel | GSI Technology | 200 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | Compliant | 3.6 V | 2.3 V | SyncBurst | Tray | GS8128436GB | SCD/DCD Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 144 Mbit | 4 | 385 mA, 475 mA | 7.5 ns | 4 M x 36 | 22 b | SRAM | 144 Mb | 144 | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z36CGB-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 84 | Parallel | GSI Technology | 200 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS842Z36CGB | NBT Pipeline/Flow Through | Memory & Data Storage | 4 Mbit | 160 mA, 190 mA | 6.5 ns | 128 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8128436B-167IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-119 | YES | 119 | 8 ns | GSI Technology | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8128436B-167IV | 167 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.34 | Compliant | No | FBGA | 3.6 V | 2.3 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8128436B | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 144 Mbit | 4 | SYNCHRONOUS | 375 mA, 430 mA | 8 ns | Flow-Through/Pipelined | 4 M x 36 | 1.99 mm | 36 | 22 Bit | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No | ||||||||||
![]() | Mfr Part No GS81284Z18GB-167IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | SDR | Parallel | 167 MHz | 167 MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | Compliant | 3.6 V | 2.3 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | GS81284Z18GB | 144 Mbit | 2 | 350 mA, 400 mA | 8 ns | Flow-Through/Pipelined | 8 M x 18 | 22 Bit | 144 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z36GB-167 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | Details | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8642Z36GB | NBT Pipeline/Flow Through | Memory & Data Storage | 119 | 72 Mbit | 4 | 240 mA, 290 mA | 8 ns | Flow-Through/Pipelined | 2 M x 36 | 21 Bit | SRAM | 72 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864218B-167I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 8 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864218B-167I | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.15 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864218B | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 72 Mbit | 2 | SYNCHRONOUS | 215 mA, 260 mA | 8 ns | Flow-Through/Pipelined | 4 M x 18 | 1.99 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | ||||||||||||
![]() | Mfr Part No GS8162Z36DB-333V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | 21 | Parallel | GSI Technology | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | SMD/SMT | 36 Bit | Compliant | FBGA | 2.7 V | 1.7 V | Synchronous | NBT SRAM | 1.8, 2.5 V | 0 to 85 °C | Bulk | GS8162Z36DB | NBT Pipeline/Flow Through | 85 °C | 0 °C | Memory & Data Storage | 119 | 18 Mbit | 4 | 240 mA, 310 mA | 5@Flow-Through/3@Pip | 512 k x 36 | 19 Bit | SRAM | 18 Mb | 18 | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS81284Z18B-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | SDR | 10 | GSI TECHNOLOGY | Parallel | GSI Technology | GS81284Z18B-200IV | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.34 | Compliant | No | 3.6 V | 2.3 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS81284Z18B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 360 mA, 435 mA | 7.5 ns | Flow-Through/Pipelined | 8MX18 | 1.99 mm | 18 | 22 Bit | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm | |||||||||||||
![]() | Mfr Part No GS864218GB-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | Compliant | FBGA | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS864218GB | SCD/DCD Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 119 | 72 Mbit | 2 | 250 mA, 335 mA | 6.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864218B-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864218B-250IV | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.17 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS864218B | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 250 mA, 335 mA | 6.5 ns | Flow-Through/Pipelined | 4 M x 18 | 1.99 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 22 mm | 14 mm | No | |||||||||
![]() | Mfr Part No GS832236AGB-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4 ns | GSI Technology | 400 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-400 | 400 MHz | 250@Flow-Through/400@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832236AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 285 mA, 395 mA | 4 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mb | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | ||
![]() | Mfr Part No GS8128418B-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-119 | YES | 119 | 7.5 ns | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8128418B-200V | 200 MHz | 200 MHz | 2, 2.7 V | + 70 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 8 MWords | 8000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.36 | Compliant | No | FBGA | 3.6 V | 2.3 V | 1.8 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | GS8128418B | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY | 8542.32.00.41 | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 144 Mbit | 2 | SYNCHRONOUS | 325 mA, 400 mA | 7.5 ns | Flow-Through/Pipelined | 8 M x 18 | 1.99 mm | 18 | 23 Bit | 144 Mbit | 150994944 bit | Commercial | PARALLEL | CACHE SRAM | 22 mm | 14 mm | No | ||||||||||||||||||||
![]() | Mfr Part No GS8642Z18B-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 14 | Parallel | GSI Technology | 200 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | N | FBGA | 3.6 V | 2.3 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8642Z18B | NBT Pipeline/Flow Through | 70 °C | 0 °C | Memory & Data Storage | 119 | 72 Mbit | 2 | 205 mA, 270 mA | 7.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 b | SRAM | 72 Mbit | Commercial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8162Z36DGB-333IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 21 | Parallel | GSI Technology | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | Details | FBGA | 2.7 V | 1.7 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8162Z36DGB | NBT Pipeline/Flow Through | 100 °C | -40 °C | Memory & Data Storage | 119 | 18 Mbit | 4 | 260 mA, 330 mA | 5 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z18B-167 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 8 ns | GSI Technology | 167 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z18B-167 | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.17 | N | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8642Z18B | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 72 Mbit | 2 | SYNCHRONOUS | 195 mA, 240 mA | 8 ns | Flow-Through/Pipelined | 4 M x 18 | 3-STATE | 1.99 mm | 18 | 22 Bit | SRAM | 72 Mbit | 0.1 A | 75497472 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | ||
![]() | Mfr Part No GS882Z18CGB-150IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | BGA-119 | GSI Technology | SDR | 42 | Parallel | GSI Technology | 150 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | Details | FBGA | 2.7 V | 1.7 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS882Z18CGB | NBT | Memory & Data Storage | 119 | 9 Mbit | 2 | 125 mA, 135 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 18 | SRAM | 9 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS882Z18CB-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4.5 ns | GSI Technology | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS882Z18CB-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | SMD/SMT | 18 Bit | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | -40 to 85 °C | Tray | GS882Z18CB | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 185 mA, 240 mA | 4.5@Flow-Through/2.5 | 512 k x 18 | 1.77 mm | 18 | SRAM | 9 | PARALLEL | ZBT SRAM | SRAM | 22 mm | 14 mm |
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