The category is 'Memory'
Memory (2)
- All Manufacturers
- Mfr
- Mounting Type
- Operating Temperature
- Package
- Package / Case
- Product Status
- Series
- Supplier Device Package
- Technology
- Base Product Number
- Clock Frequency-Max (fCLK)
- Current - Average Rectified (Io) (per Diode)
- Package / Case:
TO-3P-3 Full Pack
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Base Product Number | Clock Frequency-Max (fCLK) | Current - Average Rectified (Io) (per Diode) | Current-Collector (Ic) (Max) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Mfr | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | Rohs Code | Supply Voltage-Nom (Vsup) | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Terminal Finish | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Speed | Diode Type | Current - Reverse Leakage @ Vr | Operating Mode | Voltage - Forward (Vf) (Max) @ If | Supply Current-Max | Power - Max | Memory Format | Memory Interface | Operating Temperature - Junction | Organization | Seated Height-Max | Memory Width | Voltage - DC Reverse (Vr) (Max) | Transistor Type | Standby Current-Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector Cutoff (Max) | Memory Density | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) | Parallel/Serial | Frequency - Transition | Diode Configuration | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Memory Organization | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr Part No S99GL128P90TFIR20 | Infineon | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | TO-3P-3 Full Pack | TO-3PW | S99GL128 | 40A | Non-Volatile | Infineon Technologies | Tray | Obsolete | -40°C ~ 85°C (TA) | Tube | TMBS® | Obsolete | FLASH - NOR | 3V ~ 3.6V | 128Mbit | Fast Recovery = 200mA (Io) | Schottky | 300µA @ 150V | 910mV @ 40A | FLASH | Parallel | -40°C ~ 175°C | 150V | 1 Pair Common Cathode | 8M x 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No BR93C56-MN7TP | ROHM Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | Through Hole | TO-3P-3 Full Pack | YES | TO-3P | 8 | 2 MHz | 15 A | ROHM CO LTD | ROHM Semiconductor | BR93C56-MN7TP | Sanken | 2048 words | 2000 | 105 °C | -40 °C | Bulk | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Obsolete | 10 | 5.62 | Yes | 5 V | 150°C (TJ) | - | e3/e2 | Yes | EAR99 | TIN/TIN COPPER | 8542.32.00.51 | EEPROMs | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | SYNCHRONOUS | 0.002 mA | 160 W | 2KX1 | 1.75 mm | 1 | NPN | 0.000015 A | 40 @ 5A, 4V | 10µA (ICBO) | 2048 bit | 500mV @ 500mA, 5A | 260 V | SERIAL | 60MHz | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 5 ms | 40 | SOFTWARE | 4.9 mm | 3.9 mm |

