The category is 'Memory'
Memory (1275)
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TQFP-100
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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![]() | Mfr Part No GS816036DGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 5.5 ns | GSI Technology | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816036DGT-250 | 250 MHz | + 85 C | SDR | 0 C | Yes | SMD/SMT | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.32 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS816036DGT | 3A991.B.2.B | Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | SYNCHRONOUS | 230 mA, 250 mA | 5.5 ns | 512 k x 36 | 1.6 mm | 36 | SRAM | 18874368 bit | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | |||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88018CGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88018CGT-150I | 150 MHz | + 85 C | SDR | - 40 C | Yes | 3 | SMD/SMT | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.3 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88018CGT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 150 mA | 7.5 ns | 512 k x 18 | 3-STATE | 1.6 mm | 18 | SRAM | 0.045 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||||||||||||||||||
![]() | Mfr Part No GS880E32CGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS880E32CGT | DCD | Memory & Data Storage | 9 Mbit | 155 mA, 195 mA | 5.5 ns | 256 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61LPS25636A-250TQLI | Integrated Silicon Solution, Inc. (ISSI) | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | YES | 100 | 2.6 ns | INTEGRATED SILICON SOLUTION INC | IS61LPS25636A-250TQLI | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | 5.61 | Details | Yes | 3.3 V | 0.288894 oz | IS61LPS25636A | e3 | Matte Tin (Sn) - annealed | CMOS | QUAD | GULL WING | 1 | 0.65 mm | compliant | R-PQFP-G100 | 3.465 V | INDUSTRIAL | 3.165 V | SYNCHRONOUS | 256KX36 | 1.6 mm | 36 | 9437184 bit | PARALLEL | CACHE SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88132CGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | GSI Technology | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88132CGT-150I | 150 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | UNSPECIFIED | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.29 | Details | Yes | 3.6 V | 2.3 V | 3.3 V | SyncBurst | Tray | GS88132CGT | 3A991.B.2.B | Pipeline/Flow Through | ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-XQFP-G100 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 9 Mbit | SYNCHRONOUS | 150 mA, 160 mA | 7.5 ns | 256 k x 36 | 1.6 mm | 32 | SRAM | 8388608 bit | SERIAL | CACHE SRAM | SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880F18CGT-6.5I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | 153 MHz | SDR | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880F18CGT-6.5I | 153.8 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS880F18CGT | e3 | Yes | 3A991.B.2.B | Flow Through | PURE MATTE TIN | FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | 2 | SYNCHRONOUS | 150 mA | 6.5 ns | Flow-Through | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 0.045 A | 9437184 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | |||
![]() | Mfr Part No GS88018CGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 72 | Parallel | GSI Technology | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS88018CGT | Pipeline/Flow Through | Memory & Data Storage | 100 | 9 Mbit | 2 | 165 mA, 200 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 18 | 19 Bit | SRAM | 9 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880E18CGT-150V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | SDR | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E18CGT-150V | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS880E18CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 9 Mbit | 2 | SYNCHRONOUS | 105 mA, 115 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 0.025 A | 9437184 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm | |||
![]() | Mfr Part No GS8161Z36DGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z36DGT-150I | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 1.66 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8161Z36DGT | 3A991.B.2.B | NBT | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | INDUSTRIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 200 mA, 210 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 36 | 1.6 mm | 36 | 19 Bit | SRAM | 18 Mbit | 18874368 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | ||||||||||||||
![]() | Mfr Part No GS881Z36CGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | GSI TECHNOLOGY | Parallel | GSI Technology | GS881Z36CGT-250 | 250 MHz | + 70 C | 0 C | 3 | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.52 | Yes | 3.6 V | 2.3 V | 2.5 V | e3 | Yes | 3A991.B.2.B | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 155 mA, 195 mA | 5.5 ns | 256 k x 36 | 1.6 mm | 36 | 9437184 bit | PARALLEL | ZBT SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816136DGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS816136DGT-150 | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | QFP | QFP, | RECTANGULAR | FLATPACK | Active | QFP | NOT SPECIFIED | 5.26 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS816136DGT | 3A991.B.2.B | Pipeline/Flow Through | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | SYNCHRONOUS | 180 mA, 190 mA | 7.5 ns | 512 k x 36 | 36 | SRAM | 18874368 bit | PARALLEL | CACHE SRAM | SRAM | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E32DGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS8161E32DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 230 mA, 250 mA | 5.5 ns | 512 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8160E36DGT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 200 MHz | 2.7, 3.6 V | + 100 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 512 kWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8160E36DGT | DCD Synchronous Burst | Memory & Data Storage | 100 | 18 Mbit | 4 | 225 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816136DGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS816136DGT | Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 230 mA, 250 mA | 5.5 ns | 512 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS881Z36CGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS881Z36CGT | NBT Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 130 mA, 140 mA | 7.5 ns | 256 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E32DGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 250 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS8161E32DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 250 mA, 270 mA | 5.5 ns | 512 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS881E18CGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 72 | Parallel | GSI Technology | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | SyncBurst | Tray | GS881E18CGT | DCD Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 120 mA, 130 mA | 7.5 ns | 512 k x 18 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8161Z18DGT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 5.5 ns | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z18DGT-250V | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.26 | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | 3A991.B.2.B | ALSO OPERATES AT 2.5V | 8542.32.00.41 | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2 V | COMMERCIAL | 1.7 V | 18 Mbit | 2 | SYNCHRONOUS | 205 mA, 225 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 18 | 20 Bit | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | 20 mm | 14 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No GS8161E36DGT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4.2 ns | GSI Technology | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161E36DGT-200I | 200 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 524288 words | 512000 | 85 °C | -40 °C | UNSPECIFIED | QFP | QFP, | RECTANGULAR | FLATPACK | Active | QFP | NOT SPECIFIED | 5.64 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS8161E36DGT | 3A991.B.2.B | DCD Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | compliant | 100 | R-XQFP-G100 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 18 Mbit | SYNCHRONOUS | 230 mA | 6.5 ns | 512 k x 36 | 36 | SRAM | 18874368 bit | PARALLEL | CACHE SRAM | SRAM | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8160E32DGT-150IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 150 MHz | 150 MHz | 2, 2.7 V | + 100 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 512 kWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8160E32DGT | DCD Synchronous Burst | Memory & Data Storage | 100 | 18 Mbit | 4 | 195 mA, 210 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 32 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM |
GS816036DGT-250
GSI Technology
Package:Memory
Price: please inquire
GS88018CGT-150I
GSI Technology
Package:Memory
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GS880E32CGT-250
GSI Technology
Package:Memory
Price: please inquire
IS61LPS25636A-250TQLI
Integrated Silicon Solution, Inc. (ISSI)
Package:Memory
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GS88132CGT-150I
GSI Technology
Package:Memory
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GS880F18CGT-6.5I
GSI Technology
Package:Memory
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GS88018CGT-250I
GSI Technology
Package:Memory
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GS880E18CGT-150V
GSI Technology
Package:Memory
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GS8161Z36DGT-150I
GSI Technology
Package:Memory
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GS881Z36CGT-250
GSI Technology
Package:Memory
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GS816136DGT-150
GSI Technology
Package:Memory
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GS8161E32DGT-250
GSI Technology
Package:Memory
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GS8160E36DGT-200IV
GSI Technology
Package:Memory
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GS816136DGT-250
GSI Technology
Package:Memory
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GS881Z36CGT-150
GSI Technology
Package:Memory
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GS8161E32DGT-250I
GSI Technology
Package:Memory
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GS881E18CGT-150
GSI Technology
Package:Memory
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GS8161Z18DGT-250V
GSI Technology
Package:Memory
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GS8161E36DGT-200I
GSI Technology
Package:Memory
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GS8160E32DGT-150IV
GSI Technology
Package:Memory
Price: please inquire
