Shop the Latest Memory at Richard Electronics

The category is 'Memory'

Memory (1275)

All Manufacturers
Mounting Styles
Organization
Package / Case
Interface Type
Maximum Operating Temperature
Memory Size
Minimum Operating Temperature
Supply Current-Max
Supply Voltage-Max
Supply Voltage-Min
Access Time
Series

Package / Case:
TQFP-100

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
Mfr Part No GS816032DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	5.5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS816032DGT-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	32 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34		Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C		GS816032DGT			3A991.B.2.B			ALSO OPERATES AT 2.5V	8542.32.00.41		CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V		INDUSTRIAL	1.7 V	18 Mbit	4	SYNCHRONOUS	250 mA, 270 mA	5.5 ns	Flow-Through/Pipelined	512 k x 32		1.6 mm	32	20 Bit		18 Mbit		16777216 bit	Industrial	PARALLEL		CACHE SRAM			20 mm	14 mm
Mfr Part No GS8160E32DGT-200V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage								100							18 Mbit	4		205 mA, 210 mA	6.5 ns		512 k x 32					SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8160E18DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			18		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes			SMD/SMT	18 Bit															Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS8160E18DGT				DCD Synchronous Burst				Memory & Data Storage								100							18 Mbit			225 mA, 245 mA	5.5		1 M x 18					SRAM			18						SRAM
Mfr Part No GS8161Z36DGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z36DGT				NBT				Memory & Data Storage								100							18 Mbit	4		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS8161E36DGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8161E36DGT				DCD Pipeline/Flow Through				Memory & Data Storage								100							18 Mbit	4		245 mA, 265 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial					SRAM
Mfr Part No GS8160Z36DGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology			18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8160Z36DGT-250V	250 MHz			+ 85 C	SDR		0 C	Yes			SMD/SMT		524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.49	Details	Yes		2.7 V	1.7 V	1.8 V		NBT SRAM				Tray	GS8160Z36DGT			3A991.B.2.B	NBT		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2 V		COMMERCIAL	1.7 V	18 Mbit		SYNCHRONOUS	225 mA, 245 mA	5.5 ns		512 k x 36		1.6 mm	36		SRAM			18		PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm
Mfr Part No GS880E18CGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	150 MHz		72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E18CGT-150I	150 MHz			+ 85 C	SDR		- 40 C	Yes	3		SMD/SMT		524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.6	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS880E18CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 150 mA	7.5 ns		512 k x 18	3-STATE	1.6 mm	18		SRAM		0.045 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS880F18CGT-5I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100									Parallel						+ 85 C			- 40 C				SMD/SMT																			3.6 V	2.3 V																															9 Mbit			170 mA	5 ns		512 k x 18								9
Mfr Part No GS881Z32CGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	72		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS881Z32CGT				NBT Pipeline/Flow Through				Memory & Data Storage								100							9 Mbit	1		155 mA, 195 mA	5.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
Mfr Part No GS8161E32DGT-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			36		Parallel	GSI Technology		150 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			NBT SRAM				Tray	GS8161E32DGT				DCD Pipeline/Flow Through				Memory & Data Storage															18 Mbit			200 mA, 210 mA	7.5 ns		512 k x 32					SRAM									SRAM
Mfr Part No GS84018CGT-166I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100	YES	100	7 ns				72	GSI TECHNOLOGY	Parallel		GS84018CGT-166I	166 MHz			+ 85 C	SDR		- 40 C	Yes	3		SMD/SMT		262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active		NOT SPECIFIED	5.66	Details	Yes		3.6 V	2.3 V	3.3 V		SyncBurst				Tray	GS84018CGT			3A991.B.2.B	Pipeline/Flow Through	Pure Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE			CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant		R-PQFP-G100		3.6 V		INDUSTRIAL	3 V	4 Mbit		SYNCHRONOUS	145 mA, 170 mA	6.5 ns		256 k x 18		1.6 mm	18					4718592 bit		PARALLEL		CACHE SRAM			20 mm	14 mm
Mfr Part No GS84036CGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100							72		Parallel			250 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS84036CGT				Pipeline/Flow Through																			4 Mbit			155 mA, 195 mA	5.5 ns		128 k x 36
Mfr Part No GS8161E32DGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			18		Parallel	GSI Technology		200 MHz			+ 85 C	SDR		- 40 C	Yes			SMD/SMT																Details			2.7 V	1.7 V			NBT SRAM				Tray	GS8161E32DGT				DCD Pipeline/Flow Through				Memory & Data Storage															18 Mbit			225 mA, 230 mA	6.5 ns		512 k x 32					SRAM									SRAM
Mfr Part No GS8160E18DGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		250 MHz	250 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS8160E18DGT				DCD Synchronous Burst				Memory & Data Storage								100							18 Mbit	2		205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS881Z18CGT-300	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5 ns			SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z18CGT-300	300 MHz		2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C		3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.51		Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 70 °C		GS881Z18CGT	e3	Yes	3A991.B.2.B		Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41		CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		COMMERCIAL	2.3 V	9 Mbit	1	SYNCHRONOUS	150 mA, 205 mA	5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18			9 Mbit		9437184 bit	Commercial	PARALLEL		ZBT SRAM			20 mm	14 mm
Mfr Part No GS8160E18DGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			36		Parallel	GSI Technology		200 MHz			+ 100 C	SDR		- 40 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS8160E18DGT				Pipeline/Flow Through				Memory & Data Storage															18 Mbit			215 mA	6.5 ns		1 M x 18					SRAM									SRAM
Mfr Part No GS880Z18CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	72		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880Z18CGT				NBT				Memory & Data Storage								100							9 Mbit	1		130 mA, 155 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS8160E18DGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		200 MHz	200 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8160E18DGT				DCD Synchronous Burst				Memory & Data Storage								100							18 Mbit	2		210 mA, 215 mA	6.5 ns		1 M x 18					SRAM	18 Mbit			Industrial					SRAM
Mfr Part No GS88018CGT-300I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology	300 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	170 mA, 225 mA	5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	19 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS880E36CGT-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology			72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E36CGT-200	200 MHz			+ 70 C	SDR		0 C	Yes	3		SMD/SMT		262144 words	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.61	Details	Yes		3.6 V	2.3 V	2.5 V		SyncBurst				Tray	GS880E36CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 170 mA	6.5 ns		256 k x 36	3-STATE	1.6 mm	36		SRAM		0.025 A	9437184 bit		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm

Memory (1275)