Memory (1275)

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z36DGT-150V

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.26

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS8161Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2 V

COMMERCIAL

1.7 V

18 Mbit

4

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

153 MHz

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880F36CGT-6.5

+ 70 C

SDR

0 C

Yes

3

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS880F36CGT

e3

Yes

3A991.B.2.B

Flow Through

PURE MATTE TIN

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

9437184 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

SMD/SMT

18 Bit

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

0 to 70 °C

Tray

GS88118CGT

Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

150 mA, 205 mA

5@Flow-Through/2.5@P

512 k x 18

19 Bit

SRAM

9

SRAM

-

-

Min: 1

Mult: 1

13 Weeks

TQFP-100

YES

100

5.5 ns

250 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z36AGT-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.31

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

3A991.B.2.B

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832018AGT-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

SMD/SMT

18 Bit

2097152 words

2000000

85 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.34

Details

Yes

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0 to 85 °C

Tray

GS832018AGT

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

OTHER

2.3 V

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5@Flow-Through/3@P

2 M x 18

1.6 mm

18

21 b

SRAM

36 Mb

36

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

5.5 ns

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8161Z18DGT-250I

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.26

Compliant

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Bulk

3A991.B.2.B

85 °C

-40 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

2

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

333 MHz

200@Flow-Through/333@Pipelined MHz

2, 2.7 V

+ 70 C

SDR

1.7, 2.3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

512 kWords

Details

TQFP

2.7 V

1.7 V

Synchronous

SyncBurst

1.8, 2.5 V

Commercial grade

0 to 85 °C

Tray

GS816136DGT

Synchronous Burst

85 °C

0 °C

Memory & Data Storage

100

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

No

-

-

Min: 1

Mult: 1

12 Weeks

TQFP-100

YES

100

7 ns

GSI Technology

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS84032CGT-166I

166 MHz

+ 85 C

SDR

- 40 C

Yes

3

SMD/SMT

131072 words

128000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

NOT SPECIFIED

5.67

Details

Yes

3.6 V

2.3 V

3.3 V

SyncBurst

-40 to 85 °C

Tray

GS84032CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

R-PQFP-G100

3.6 V

INDUSTRIAL

3 V

4 Mbit

SYNCHRONOUS

155 mA, 250 mA

7 ns

128 k x 32

1.6 mm

32

SRAM

4194304 bit

PARALLEL

CACHE SRAM

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

18

Parallel

GSI Technology

150 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

2.7 V

1.7 V

NBT SRAM

Tray

GS816132DGT

Synchronous Burst

Memory & Data Storage

18 Mbit

195 mA, 210 mA

7.5 ns

512 k x 32

SRAM

SRAM

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z18DGT-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 100 C

2.3, 3 V

- 40 C

SMD/SMT

18 Bit

1 MWords

1000000

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

NOT SPECIFIED

5.29

Compliant

Yes

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

R-PQFP-G100

2.7 V

2.3 V

18 Mbit

2

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

36

Parallel

GSI Technology

250 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

NBT SRAM

Tray

GS816132DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 32

SRAM

SRAM

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

72

Parallel

GSI Technology

150 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

Details

3.6 V

2.3 V

SyncBurst

Tray

GS88036CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 36

SRAM

SRAM

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

GSI Technology

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88132CGT-300I

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

85 °C

-40 °C

UNSPECIFIED

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.29

Details

Yes

TQFP

3.6 V

2.3 V

3.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS88132CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-XQFP-G100

Not Qualified

3.6 V

INDUSTRIAL

3 V

9 Mbit

1

SYNCHRONOUS

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

32

17 Bit

SRAM

9 Mbit

8388608 bit

Industrial

SERIAL

CACHE SRAM

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

14 Weeks, 2 Days

TQFP-100

YES

100

7.5 ns

GSI Technology

133 MHz

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880F36CGT-7.5I

133.3 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.35

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS880F36CGT

e3

Yes

3A991.B.2.B

Flow Through

PURE MATTE TIN

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

150 mA

7.5 ns

Flow-Through

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

TQFP-100

SDR

Parallel

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2, 2.7 V

+ 85 C

1.7, 2.3 V

- 40 C

Surface Mount

SMD/SMT

36 Bit

512 kWords

TQFP

2.7 V

1.7 V

Synchronous

1.8, 2.5 V

Industrial grade

-40 to 100 °C

GS816136DGT

100

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

150 MHz

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E18CGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.6

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS880E18CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

10 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8160Z18DGT-150IV

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2, 2.7 V

+ 100 C

SDR

1.7, 2.3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP,

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.31

Details

Yes

TQFP

2.7 V

1.7 V

1.8 V

Synchronous

NBT SRAM

1.8, 2.5 V

Industrial grade

-40 to 100 °C

Tray

GS8160Z18DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

2 V

INDUSTRIAL

1.7 V

18 Mbit

2

SYNCHRONOUS

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

7 Weeks

TQFP-100

YES

100

12 ns

GSI Technology

100 MHz

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS840Z18CGT-100

100 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.39

Details

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS840Z18CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3,3.3 V

COMMERCIAL

2.3 V

4 Mbit

SYNCHRONOUS

110 mA, 110 mA

12 ns

256 k x 18

3-STATE

1.6 mm

18

SRAM

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

3.14 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832018AGT

Pipeline/Flow Through

Memory & Data Storage

100

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

-

-

Min: 1

Mult: 1

TQFP-100

GSI Technology

SDR

18

Parallel

GSI Technology

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

Details

TQFP

3.6 V

2.3 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832018AGT

Pipeline/Flow Through

Memory & Data Storage

100

36 Mbit

2

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM