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Package / Case:
TQFP-100

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS832018AGT-375I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832018AGT				Pipeline/Flow Through						Memory & Data Storage								100							36 Mbit	2		270 mA, 370 mA	4.2 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM
Mfr Part No GS88032CGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	4.5 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88032CGT-333I	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.61	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88032CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	200 mA, 260 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32	3-STATE	1.6 mm	32	18 Bit	SRAM	9 Mbit	0.045 A	8388608 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS832032AGT-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	1 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832032AGT				Synchronous Burst						Memory & Data Storage								100							36 Mbit	4		290 mA, 375 mA	5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit	SRAM	36 Mbit			Industrial					SRAM
Mfr Part No GS880Z32CGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 70 °C		GS880Z32CGT				NBT						Memory & Data Storage								100							9 Mbit	1		180 mA, 240 mA	4.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial					SRAM
Mfr Part No GS8640E18GT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	4 MWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8640E18GT				DCD		85 °C	-40 °C			Memory & Data Storage								100							72 Mbit	2		250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18				22 Bit	SRAM	72 Mbit			Industrial					SRAM			No
Mfr Part No GS816118DGT-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords														Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk	GS816118DGT				Synchronous Burst		100 °C	-40 °C			Memory & Data Storage								100							18 Mbit	2		240 mA, 300 mA	5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial					SRAM			No
Mfr Part No GS864036GT-167V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	8 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864036GT-167V	167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864036GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		COMMERCIAL	1.7 V	72 Mbit	4	SYNCHRONOUS	220 mA, 270 mA	8 ns	Flow-Through/Pipelined	2 M x 36		1.6 mm	36	21 Bit	SRAM	72 Mbit		75497472 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm	No
Mfr Part No GS832032AGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100								Parallel			150 MHz	133@Flow-Through/150@Pipelined MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C				SMD/SMT	32 Bit															Compliant			2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C	Bulk	GS832032AGT						100 °C	-40 °C											100							36 Mbit	4		220 mA, 230 mA	7.5@Flow-Through/3.8		1 M x 32				20 b		36 Mb		36	Industrial								No
Mfr Part No GS881E32CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	256 kWords														Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100							9 Mbit	4		145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Industrial					SRAM			No
Mfr Part No GS816032DGT-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	4 ns	GSI Technology	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816032DGT-400	400 MHz	250@Flow-Through/400@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34	Compliant	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS816032DGT			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100		2.7 V		COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 32		1.6 mm	32	20 Bit	SRAM	18 Mbit		16777216 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm	No
Mfr Part No GS8320E32AGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	1 MWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Bulk	GS8320E32AGT				Pipeline/Flow Through		100 °C	-40 °C			Memory & Data Storage								100							36 Mbit	4		280 mA, 365 mA	4.5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit	SRAM	36 Mbit			Industrial					SRAM			No
Mfr Part No GS8160E32DGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	512 kWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Bulk	GS8160E32DGT				Pipeline/Flow Through		85 °C	0 °C			Memory & Data Storage								100							18 Mbit	4		260 mA, 315 mA	4.5 ns	Flow-Through/Pipelined	512 k x 32				20 Bit	SRAM	18 Mbit			Commercial					SRAM			No
Mfr Part No GS816136DGT-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		375 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Bulk	GS816136DGT				Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage								100							18 Mbit	4		270 mA, 350 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36				19 b	SRAM	18 Mbit			Commercial					SRAM			No
Mfr Part No GS864032GT-167V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		167 MHz	125@Flow-Through/167@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords														Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS864032GT				Synchronous Burst		70 °C	0 °C			Memory & Data Storage								100							72 Mbit	4		220 mA, 270 mA	8 ns	Flow-Through/Pipelined	2 M x 32				21 Bit	SRAM	64 Mbit			Commercial					SRAM			No
Mfr Part No GS881E36CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	66		Parallel	GSI Technology		250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	256 kWords														Compliant		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881E36CGT				DCD Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100							9 Mbit	4		160 mA, 200 mA	5.5 ns	Flow-Through/Pipelined	256 k x 36				18 b	SRAM	9 Mbit			Industrial					SRAM			No
Mfr Part No GS864018GT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864018GT-250IV	250 MHz		2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Compliant	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS864018GT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)	85 °C	-40 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	72 Mbit	2	SYNCHRONOUS	250 mA, 335 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18	22 b	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm	No
Mfr Part No GS816136DGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Bulk	GS816136DGT				Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100							18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial					SRAM			No
Mfr Part No GS8161Z36DGT-333I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	36		Parallel	GSI Technology		333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Bulk	GS8161Z36DGT				NBT		85 °C	-40 °C			Memory & Data Storage								100							18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial					SRAM			No
Mfr Part No GS864032GT-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology	SDR	18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	2 MWords														Compliant		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864032GT				Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage								100							72 Mbit	4		275 mA, 380 mA	6.5 ns	Flow-Through/Pipelined	2 M x 32				21 Bit	SRAM	64 Mbit			Industrial					SRAM			No
Mfr Part No GS881Z36CGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology		66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z36CGT-250V	250 MHz		2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	3		SMD/SMT	36 Bit	262144 words	256000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V		0 to 70 °C	Tray	GS881Z36CGT	e3	Yes	3A991.B.2.B	NBT	Matte Tin (Sn)	70 °C	0 °C	IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	140 mA, 180 mA	5.5@Flow-Through/3@P		256 k x 36		1.6 mm	36	18 b	SRAM	9 Mb		9		PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm	No

Memory (1275)