The category is 'Memory'
Memory (1275)
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TQFP-100
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS832032AGT-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 4.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832032AGT-333I | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.7 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832032AGT | 3A991.B.2.B | Pipeline/Flow Through | ALSO OPERATES AT 3.3; SYNCHRONOUS BURST | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 280 mA, 365 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 32 | 1.6 mm | 32 | 20 Bit | SRAM | 36 Mbit | 33554432 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS832036AGT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832036AGT-200IV | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.35 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS832036AGT | 3A991.B.2.B | Synchronous Burst | ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 235 mA, 270 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 1.6 mm | 36 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Industrial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS864018GT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864018GT-250V | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864018GT | e3 | Yes | 3A991.B.2.B | Synchronous Burst | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 230 mA, 315 mA | 6.5 ns | Flow-Through/Pipelined | 4 M x 18 | 1.6 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | ||||||||||||
![]() | Mfr Part No GS88018CGT-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | SMD/SMT | 18 Bit | Details | TQFP | 3.6 V | 2.3 V | SyncBurst | 2.5, 3.3 V | 0 to 70 °C | Tray | GS88018CGT | Pipeline/Flow Through | Memory & Data Storage | 100 | 9 Mbit | 165 mA, 220 mA | 4.5@Flow-Through/2.5 | 512 k x 18 | 19 Bit | SRAM | 9 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880Z18CGT-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | GSI Technology | SDR | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880Z18CGT-250IV | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | UNSPECIFIED | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS880Z18CGT | 3A991.B.2.B | NBT | PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-XQFP-G100 | Not Qualified | 2 V | INDUSTRIAL | 1.7 V | 9 Mbit | 1 | SYNCHRONOUS | 145 mA, 185 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 18 | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | ||||||||||||||||
![]() | Mfr Part No GS8161E32DGT-375I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 36 | Parallel | GSI Technology | 375 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | Details | 3.6 V | 2.3 V | NBT SRAM | Tray | GS8161E32DGT | DCD Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 290 mA, 370 mA | 4.2 ns | 512 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS864032GT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 3.6 V | + 70 C | SDR | 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 32 Bit | 2 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 3.3000 V | Commercial grade | 0 to 70 °C | Tray | GS864032GT | Pipeline/Flow Through | Memory & Data Storage | 100 | 72 Mbit | 4 | 255 mA, 360 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 32 | 21 Bit | SRAM | 64 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880E18CGT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | GSI Technology | 250 MHz | SDR | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E18CGT-250V | 250 MHz | 181.5@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS880E18CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 9 Mbit | 2 | SYNCHRONOUS | 125 mA, 165 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 0.025 A | 9437184 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm | |||||
![]() | Mfr Part No GS8161Z18DGT-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | TQFP-100 | YES | 100 | 4.5 ns | GSI Technology | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8161Z18DGT-333 | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.12 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8161Z18DGT | 3A991.B.2.B | NBT | 70 °C | 0 °C | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 2 | SYNCHRONOUS | 240 mA, 285 mA | 4.5 ns | Flow-Through/Pipelined | 1 M x 18 | 1.6 mm | 18 | 20 Bit | SRAM | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | No | ||||||||||||||
![]() | Mfr Part No GS864036GT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS864036GT-250V | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS864036GT | e3 | Yes | 3A991.B.2.B | Synchronous Burst | Matte Tin (Sn) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | COMMERCIAL | 1.7 V | 72 Mbit | 4 | SYNCHRONOUS | 255 mA, 360 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 36 | 1.6 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | No | |||||||||
![]() | Mfr Part No GS8640E18GT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8640E18GT | DCD | 70 °C | 0 °C | Memory & Data Storage | 100 | 72 Mbit | 2 | 230 mA, 315 mA | 6.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Commercial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640FZ18GT-8.0VI | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640FZ18GT | NBT | Memory & Data Storage | 100 | 72 Mbit | 1 | 215 mA | 8 ns | Flow-Through | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS881E36CGT-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 36 | Parallel | GSI Technology | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS881E36CGT | DCD Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 100 | 9 Mbit | 4 | 200 mA, 260 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Industrial | SRAM | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS881E18CGT-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 66 | Parallel | GSI Technology | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS881E18CGT | DCD Pipeline/Flow Through | 85 °C | -40 °C | Memory & Data Storage | 100 | 9 Mbit | 2 | 125 mA, 160 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 18 | 18 b | SRAM | 9 Mbit | Industrial | SRAM | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832036AGT-333V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832036AGT-333V | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.7 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832036AGT | 3A991.B.2.B | Synchronous Burst | 85 °C | 0 °C | ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | OTHER | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 270 mA, 355 mA | 5 ns | Flow-Through/Pipelined | 1 M x 36 | 1.6 mm | 36 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | CACHE SRAM | SRAM | 20 mm | 14 mm | No | ||||||||||||||
![]() | Mfr Part No GS8640FZ18GT-6.5I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8640FZ18GT-6.5I | 153.8 MHz | 3.6 V | + 85 C | SDR | 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.38 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 3.3000 V | Industrial grade | -40 to 85 °C | Tray | GS8640FZ18GT | e3 | Yes | 3A991.B.2.B | NBT Flow Through | Matte Tin (Sn) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY. | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.75 V | INDUSTRIAL | 2.25 V | 72 Mbit | 2 | SYNCHRONOUS | 250 mA | 6.5 ns | Flow-Through | 4 M x 18 | 1.6 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | ||||||||||||
![]() | Mfr Part No GS8320E36AGT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | GSI Technology | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8320E36AGT-250V | 250 MHz | 250 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | , | Active | 5.8 | Details | Yes | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS8320E36AGT | DCD Synchronous Burst | Memory & Data Storage | compliant | 100 | 36 Mbit | 4 | 240 mA, 295 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640E18GT-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 18 | Parallel | GSI Technology | 200 MHz | 133.3@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | Details | TQFP | 3.6 V | 2.3 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS8640E18GT | Pipeline/Flow Through | Memory & Data Storage | 100 | 72 Mbit | 2 | 225 mA, 290 mA | 7.5 ns | Flow-Through/Pipelined | 4 M x 18 | 22 Bit | SRAM | 72 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88036CGT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | SDR | 66 | Parallel | GSI Technology | 250 MHz | 250 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | Details | TQFP | 2.7 V | 1.7 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS88036CGT | Synchronous Burst | Memory & Data Storage | 100 | 9 Mbit | 4 | 140 mA, 180 mA | 5.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8640E18GT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | TQFP-100 | GSI Technology | 18 | Parallel | GSI Technology | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | SMD/SMT | 18 Bit | Details | 3.6 V | 2.3 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS8640E18GT | Pipeline/Flow Through | Memory & Data Storage | 100 | 72 Mbit | 230 mA, 315 mA | 6.5@Flow-Through/3@P | 4 M x 18 | SRAM | 72 | Commercial | SRAM |
GS832032AGT-333I
GSI Technology
Package:Memory
Price: please inquire
GS832036AGT-200IV
GSI Technology
Package:Memory
Price: please inquire
GS864018GT-250V
GSI Technology
Package:Memory
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GS88018CGT-333
GSI Technology
Package:Memory
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GS880Z18CGT-250IV
GSI Technology
Package:Memory
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GS8161E32DGT-375I
GSI Technology
Package:Memory
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GS864032GT-250
GSI Technology
Package:Memory
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GS880E18CGT-250V
GSI Technology
Package:Memory
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GS8161Z18DGT-333
GSI Technology
Package:Memory
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GS864036GT-250V
GSI Technology
Package:Memory
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GS8640E18GT-250V
GSI Technology
Package:Memory
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GS8640FZ18GT-8.0VI
GSI Technology
Package:Memory
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GS881E36CGT-333I
GSI Technology
Package:Memory
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GS881E18CGT-200IV
GSI Technology
Package:Memory
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GS832036AGT-333V
GSI Technology
Package:Memory
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GS8640FZ18GT-6.5I
GSI Technology
Package:Memory
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GS8320E36AGT-250V
GSI Technology
Package:Memory
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GS8640E18GT-200I
GSI Technology
Package:Memory
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GS88036CGT-250V
GSI Technology
Package:Memory
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GS8640E18GT-250
GSI Technology
Package:Memory
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