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Package / Case:
TQFP-100

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
Mfr Part No GS881Z18CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS881Z18CGT-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS881Z18CGT	e3	Yes	3A991.B.2.B	NBT	Matte Tin (Sn)	IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	125 mA, 160 mA	6.5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		ZBT SRAM		SRAM	20 mm	14 mm
Mfr Part No GS881Z18CGT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	66		Parallel	GSI Technology		250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	512 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 70 °C	Tray	GS881Z18CGT				NBT				Memory & Data Storage								100							9 Mbit	1		125 mA, 165 mA	5.5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit	SRAM	9 Mbit			Commercial					SRAM
Mfr Part No GS8161E36DGT-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Details		TQFP	2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8161E36DGT				DCD Pipeline/Flow Through				Memory & Data Storage								100							18 Mbit	4		260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial					SRAM
Mfr Part No GS88036CGT-200IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS88036CGT-200IV	200 MHz	200 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.28	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS88036CGT	e3	Yes	3A991.B.2.B	Synchronous Burst	Matte Tin (Sn)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V		INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36		1.6 mm	36	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS864018GT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864018GT-250	250 MHz	153.8@Flow-Through/250@Pipelined MHz		+ 70 C	SDR		0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	70 °C		PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	3.3000 V	Commercial grade	0 to 70 °C	Tray	GS864018GT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		COMMERCIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	230 mA, 315 mA	6.5 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18	22 Bit	SRAM	72 Mbit		75497472 bit	Commercial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS880E32CGT-250IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			66		Parallel	GSI Technology		250 MHz	181.5@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes			SMD/SMT	32 Bit															Details			2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		-40 to 85 °C	Tray	GS880E32CGT				DCD				Memory & Data Storage								100							9 Mbit			160 mA, 200 mA	5.5@Flow-Through/3@P		256 k x 32					SRAM			8						SRAM
Mfr Part No GS816118DGT-375I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	36		Parallel	GSI Technology		375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS816118DGT				Pipeline/Flow Through				Memory & Data Storage								100							18 Mbit	2		270 mA, 340 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial					SRAM
Mfr Part No GS8320E32AGT-150IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100						SDR			Parallel			150 MHz	150 MHz	2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	32 Bit	1 MWords																TQFP	2.7 V	1.7 V		Synchronous		1.8, 2.5 V	Industrial grade	-40 to 85 °C		GS8320E32AGT																100							36 Mbit	4		220 mA, 230 mA	7.5 ns	Flow-Through/Pipelined	1 M x 32						36 Mbit			Industrial
Mfr Part No GS832018AGT-333IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832018AGT-333IV	333 MHz	200@Flow-Through/333@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000			PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.34	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 100 °C	Tray	GS832018AGT			3A991.B.2.B	Synchronous Burst		ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST		Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V			1.7 V	36 Mbit	2	SYNCHRONOUS	265 mA, 350 mA	5 ns	Flow-Through/Pipelined	2 M x 18		1.6 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS8320E36AGT-375I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		375 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8320E36AGT				Pipeline/Flow Through				Memory & Data Storage								100							36 Mbit	4		290 mA, 400 mA	4.2 ns	Flow-Through/Pipelined	1 M x 36					SRAM	36 Mbit			Industrial					SRAM
Mfr Part No GS880E18CGT-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	4.5 ns	GSI Technology	333 MHz		36	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E18CGT-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3		SMD/SMT	18 Bit	524288 words	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.6	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		0 to 70 °C	Tray	GS880E18CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit		SYNCHRONOUS	165 mA, 220 mA	4.5@Flow-Through/2.5		512 k x 18	3-STATE	1.6 mm	18		SRAM		0.025 A	9		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS8640E36GT-250V	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			18		Parallel	GSI Technology		250 MHz	153.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes			SMD/SMT	36 Bit															Details			2.7 V	1.7 V		Synchronous	SyncBurst	1.8, 2.5 V		0 to 70 °C	Tray	GS8640E36GT				DCD				Memory & Data Storage								100							72 Mbit			255 mA, 360 mA	6.5@Flow-Through/3@P		2 M x 36					SRAM			72						SRAM
Mfr Part No GS8320E36AGT-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		375 MHz	238@Flow-Through/375.9@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8320E36AGT				Pipeline/Flow Through				Memory & Data Storage								100							36 Mbit	4		270 mA, 380 mA	4.2 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial					SRAM
Mfr Part No GS864018GT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology		SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS864018GT-200I	200 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP,		RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS864018GT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V		INDUSTRIAL	2.3 V	72 Mbit	2	SYNCHRONOUS	225 mA, 290 mA	7.5 ns	Flow-Through/Pipelined	4 M x 18		1.6 mm	18		SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		CACHE SRAM		SRAM	20 mm	14 mm
Mfr Part No GS8161E36DGT-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100				GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E36DGT-400	400 MHz	400 MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords						,				Active			5.8	Details	Yes	TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS8161E36DGT				DCD Pipeline/Flow Through				Memory & Data Storage							compliant	100							18 Mbit	4		280 mA, 365 mA	4 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS816118DGT-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	10 Weeks	TQFP-100	YES	100	4 ns	GSI Technology		SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS816118DGT-400	400 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	QFP	QFP,		RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.26	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS816118DGT			3A991.B.2.B	Pipeline/Flow Through		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1		compliant	100	R-PQFP-G100		2.7 V		COMMERCIAL	2.3 V	18 Mbit	2	SYNCHRONOUS	255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18			18		SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		CACHE SRAM		SRAM
Mfr Part No GS880F18CGT-6.5IV	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns	GSI Technology	153 MHz	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS880F18CGT-6.5IV		153.8 MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.36	Details	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS880F18CGT	e3	Yes	3A991.B.2.B	Flow Through	PURE MATTE TIN	FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	INDUSTRIAL	1.7 V	9 Mbit	2	SYNCHRONOUS	125 mA	6.5 ns	Flow-Through	512 k x 18	3-STATE	1.6 mm	18		SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	1.7 V	SRAM	20 mm	14 mm
Mfr Part No GS832032AGT-400	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	18		Parallel	GSI Technology		400 MHz		2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	32 Bit	1 MWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832032AGT				Pipeline/Flow Through				Memory & Data Storage								100							36 Mbit	4		285 mA, 395 mA	4 ns	Flow-Through/Pipelined	1 M x 32					SRAM	36 Mbit			Commercial					SRAM
Mfr Part No GS8160E36DGT-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology		SDR	36		Parallel	GSI Technology		375 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	512 kWords														Details		TQFP	3.6 V	2.3 V		Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8160E36DGT				Pipeline/Flow Through				Memory & Data Storage								100							18 Mbit	4		270 mA, 350 mA	4.2 ns	Flow-Through/Pipelined	512 k x 36					SRAM	18 Mbit			Commercial					SRAM
Mfr Part No GS816132DGT-375	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		TQFP-100				GSI Technology			36		Parallel	GSI Technology		375 MHz			+ 70 C	SDR		0 C	Yes			SMD/SMT																Details			3.6 V	2.3 V			SyncBurst				Tray	GS816132DGT				Pipeline/Flow Through				Memory & Data Storage															18 Mbit			270 mA, 350 mA	4.2 ns		512 k x 32					SRAM									SRAM

Memory (1275)