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The category is 'Memory'

Memory (7)

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Ihs Manufacturer
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Power Supplies:
1.2 V

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Address Bus Width (bit)	Automotive	Chip Density (bit)	Clock Frequency-Max (fCLK)	Data Bus Width (bit)	DRAM Type	ECCN (US)	EU RoHS	Factory Pack QuantityFactory Pack Quantity	HTS	Ihs Manufacturer	Interface Type	Lead Shape	Manufacturer	Manufacturer Part Number	Maximum Access Time (ns)	Maximum Clock Frequency	Maximum Clock Rate (MHz)	Maximum Operating Supply Voltage (V)	Maximum Operating Temperature	Maximum Operating Temperature (°C)	Memory Types	Minimum Operating Supply Voltage (V)	Minimum Operating Temperature	Minimum Operating Temperature (°C)	Moisture Sensitive	Mounting	Mounting Styles	Number of Bits/Word (bit)	Number of I/O Lines (bit)	Number of Internal Banks	Number of Words	Number of Words Code	Number of Words per Bank	Operating Current (mA)	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Height	Package Length	Package Shape	Package Style	Package Width	Part Life Cycle Code	PCB changed	PPAP	Risk Rank	RoHS	Rohs Code	Standard Package Name	Supplier Package	Supplier Temperature Grade	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Tradename	Typical Operating Supply Voltage (V)	Packaging	Series	Part Status	ECCN Code	Type	Subcategory	Technology	Terminal Position	Terminal Form	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Length	Width
	Mfr Part No K4A8G045WB-BCRC	Samsung Semiconductor	Datasheet	24000 In Stock	1: $8.945963 10: $8.439588 100: $7.961876 500: $7.511204 View all price	Min: 1 Mult: 1			YES	78	0.175 ns	19	No	8G	1200 MHz	4	DDR4 SDRAM	EAR99	Compliant		8542.32.00.36	SAMSUNG SEMICONDUCTOR INC	POD	Ball	Samsung Semiconductor	K4A8G045WB-BCRC	0.175		2400	1.26		95		1.14		0		Surface Mount		4	4	16			128M	93	85 °C		PLASTIC/EPOXY	FBGA	FBGA, BGA78,9X13,32	BGA78,9X13,32	0.73	11	RECTANGULAR	GRID ARRAY, FINE PITCH	7.5	Obsolete	78	No	5.8		Yes	BGA	FBGA	Commercial			1.2 V		1.2			Active			DRAMs	CMOS	BOTTOM	BALL		0.8 mm	compliant	78	R-PBGA-B78	Not Qualified		1.2 V	OTHER				0.2359 mA	2Gx4	3-STATE			0.015 A	8589934592 bit		COMMON	DDR DRAM		8192	4,8	4,8
	Mfr Part No GS81313HT36GK-625	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-260	YES	260					625 MHz					10		GSI TECHNOLOGY	Parallel			GS81313HT36GK-625		625 MHz			+ 70 C		DDR-III		0 C		Yes		SMD/SMT				4194304 words	4000000			85 °C		PLASTIC/EPOXY	HBGA	HBGA, BGA260,13X20,40	BGA260,13X20,40			RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG		Active			5.74	Details	Yes				1.35 V	1.2 V	1.2 V	SigmaDDR-IIIe		Tray	GS81313HT36GK		3A991.B.2.B	SigmaDDR-III		CMOS	BOTTOM	BALL	1	1 mm	compliant		R-PBGA-B260	Not Qualified	1.35 V	1.2 V	OTHER	1.15 V	144 Mbit	SYNCHRONOUS	1.2 A	4 M x 36	3-STATE	2.3 mm	36		150994944 bit	PARALLEL	COMMON	DDR SRAM	1.15 V				22 mm	14 mm
	Mfr Part No GS81313HT18GK-625I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-260	YES	260										10		GSI TECHNOLOGY	Parallel			GS81313HT18GK-625I		625 MHz			+ 85 C		DDR-III		- 40 C		Yes		SMD/SMT				8388608 words	8000000			85 °C	-40 °C	PLASTIC/EPOXY	HBGA	HBGA, BGA260,13X20,40	BGA260,13X20,40			RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG		Active			5.74	Details	Yes				1.35 V	1.2 V	1.2 V	SigmaDDR-IIIe		Tray	GS81313HT18GK		3A991.B.2.B	SigmaDDR-III		CMOS	BOTTOM	BALL	1	1 mm	compliant		R-PBGA-B260	Not Qualified	1.35 V	1.2 V	INDUSTRIAL	1.15 V	144 Mbit	SYNCHRONOUS	1.2 A	8 M x 18	3-STATE	2.3 mm	18		150994944 bit	PARALLEL	COMMON	DDR SRAM	1.15 V				22 mm	14 mm
	Mfr Part No GS81313HT18GK-625	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-260	YES	260										10		GSI TECHNOLOGY	Parallel			GS81313HT18GK-625		625 MHz			+ 70 C		DDR-III		0 C		Yes		SMD/SMT				8388608 words	8000000			85 °C		PLASTIC/EPOXY	HBGA	HBGA, BGA260,13X20,40	BGA260,13X20,40			RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG		Active			5.74	Details	Yes				1.35 V	1.2 V	1.2 V	SigmaDDR-IIIe		Tray	GS81313HT18GK		3A991.B.2.B	SigmaDDR-III		CMOS	BOTTOM	BALL	1	1 mm	compliant		R-PBGA-B260	Not Qualified	1.35 V	1.2 V	OTHER	1.15 V	144 Mbit	SYNCHRONOUS	1.2 A	8 M x 18	3-STATE	2.3 mm	18		150994944 bit	PARALLEL	COMMON	DDR SRAM	1.15 V				22 mm	14 mm
	Mfr Part No GS81313HT18GK-550I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-260	YES	260					550 MHz					10		GSI TECHNOLOGY	Parallel			GS81313HT18GK-550I		550 MHz			+ 85 C				- 40 C		Yes		SMD/SMT				8388608 words	8000000			85 °C	-40 °C	PLASTIC/EPOXY	HBGA	HBGA, BGA260,13X20,40	BGA260,13X20,40			RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG		Active			5.74	Details	Yes						1.2 V	SigmaDDR-IIIe		Tray	GS81313HT18GK		3A991.B.2.B	Synchronous		CMOS	BOTTOM	BALL	1	1 mm	compliant		R-PBGA-B260	Not Qualified	1.35 V	1.2 V	INDUSTRIAL	1.15 V		SYNCHRONOUS		8MX18	3-STATE	2.3 mm	18		150994944 bit	PARALLEL	COMMON	DDR SRAM	1.15 V				22 mm	14 mm
	Mfr Part No GS81313HT18GK-550	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1		BGA-260	YES	260					550 MHz					10		GSI TECHNOLOGY	Parallel			GS81313HT18GK-550		550 MHz			+ 70 C				0 C		Yes		SMD/SMT				8388608 words	8000000			85 °C		PLASTIC/EPOXY	HBGA	HBGA, BGA260,13X20,40	BGA260,13X20,40			RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG		Active			5.74	Details	Yes						1.2 V	SigmaDDR-IIIe		Tray	GS81313HT18GK		3A991.B.2.B	Synchronous		CMOS	BOTTOM	BALL	1	1 mm	compliant		R-PBGA-B260	Not Qualified	1.35 V	1.2 V	OTHER	1.15 V		SYNCHRONOUS		8MX18	3-STATE	2.3 mm	18		150994944 bit	PARALLEL	COMMON	DDR SRAM	1.15 V				22 mm	14 mm
	Mfr Part No K4A8G045WB-BCPB	Samsung Semiconductor	Datasheet	7984 In Stock	1: $30.767613 10: $29.026050 100: $27.383066 500: $25.833081 View all price	Min: 1 Mult: 1			YES	78	0.18 ns	19	No	8G	1066 MHz	4	DDR4 SDRAM	EAR99	Compliant		8542.32.00.36	SAMSUNG SEMICONDUCTOR INC	POD	Ball	Samsung Semiconductor	K4A8G045WB-BCPB	0.18		2133	1.26		95		1.14		0		Surface Mount		4	4	16			128M	83	85 °C		PLASTIC/EPOXY	FBGA	FBGA, BGA78,9X13,32	BGA78,9X13,32	0.73	11	RECTANGULAR	GRID ARRAY, FINE PITCH	7.5	Obsolete	78	No	5.82		Yes	BGA	FBGA	Commercial			1.2 V		1.2			Active			DRAMs	CMOS	BOTTOM	BALL		0.8 mm	compliant	78	R-PBGA-B78	Not Qualified		1.2 V	OTHER				0.2117 mA	2Gx4	3-STATE			0.015 A	8589934592 bit		COMMON	DDR DRAM		8192	4,8	4,8