The category is 'Memory'
Memory (6)
- All Manufacturers
- Access Mode
- Additional Feature
- Clock Frequency-Max (fCLK)
- I/O Type
- Ihs Manufacturer
- Interleaved Burst Length
- JESD-30 Code
- Length
- Manufacturer
- Manufacturer Part Number
- Memory IC Type
- Power Supplies
- Power Supplies:
1.35 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Address Bus Width (bit) | Automotive | Brand | Chip Density (bit) | Clock Frequency-Max (fCLK) | Data Bus Width (bit) | DRAM Type | ECCN (US) | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Clock Rate (MHz) | Maximum Operating Temperature (°C) | Minimum Operating Temperature (°C) | Number of Bits/Word (bit) | Number of I/O Lines (bit) | Number of Internal Banks | Number of Words | Number of Words Code | Number of Words per Bank | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | PPAP | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage (V) | Packaging | Series | Part Status | ECCN Code | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Max Frequency | I/O Type | Memory IC Type | Output Format | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Length | Width | Radiation Hardening | Lead Free |
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![]() | Mfr Part No NT5CB64M16FP-DII | Nanya | Datasheet | 16 | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | CTS Electronic Components | 800 MHz | 1000 | NANYA TECHNOLOGY CORP | CTS | NT5CB64M16FP-DII | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.63 | Details | Yes | 1.5 V | Reel | 532 | AUTO/SELF REFRESH | Oscillators | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.35 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | TCXO | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | Clipped Sine Wave | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | TCXO Oscillators | 13 mm | 9 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No MT44K32M36RCT-125E IT:A | Micron Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 168 | 0.1 ns | 24 | No | 1G | 800 MHz | 36 | RLDRAM3 | EAR99 | Compliant | MICRON TECHNOLOGY INC | Micron Technology Inc | MT44K32M36RCT-125EIT:A | 1600 | 95 | -40 | 36 | 36 | 16 | 33554432 words | 32000000 | 2M | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA168,13X13,40 | BGA168,13X13,40 | SQUARE | GRID ARRAY, LOW PROFILE | Obsolete | No | 5.84 | Compliant | Yes | Industrial | 1.35 V | 1.35 | Unconfirmed | 95 °C | -40 °C | AUTO REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | S-PBGA-B168 | Not Qualified | 1.35 V | 1.35 V | INDUSTRIAL | 1 | SYNCHRONOUS | 3.77 mA | 36 b | 32Mx36 | 3-STATE | 1.45 mm | 36 | 20 b | 1 Gb | 0.25 A | 1 | 800 MHz | COMMON | DDR DRAM | 2,4 | 2,4 | SINGLE BANK PAGE BURST | 13.5 mm | 13.5 mm | No | Lead Free | ||||||||||||||||
![]() | Mfr Part No MT41K512M8RA-125:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 78 | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K512M8RA-125:D | 536870912 words | 512000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.6 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.29 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41K512M8RA-15E:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 78 | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K512M8RA-15E:D | 536870912 words | 512000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.61 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.25 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41K256M16RE-15E:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 96 | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K256M16RE-15E:D | 268435456 words | 256000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.66 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.285 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT41K256M16RE-125:D | Micron | Datasheet | 800 | - | Min: 1 Mult: 1 | YES | 96 | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41K256M16RE-125:D | 268435456 words | 256000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 5.64 | Yes | 1.35 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B96 | Not Qualified | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.32 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm |
NT5CB64M16FP-DII
Nanya
Package:Memory
Price: please inquire
MT44K32M36RCT-125E IT:A
Micron Technology
Package:Memory
Price: please inquire
MT41K512M8RA-125:D
Micron
Package:Memory
Price: please inquire
MT41K512M8RA-15E:D
Micron
Package:Memory
Price: please inquire
MT41K256M16RE-15E:D
Micron
Package:Memory
Price: please inquire
MT41K256M16RE-125:D
Micron
Package:Memory
Price: please inquire
