The category is 'Memory'
Memory (497)
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- Power Supplies:
1.5/1.8,1.8 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8342Q36BD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342Q36BD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.37 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342Q36BD | 3A991.B.2.B | SigmaQuad-II | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 980 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 19 Bit | SRAM | 36 Mbit | 0.235 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||||
![]() | Mfr Part No GS8342D20BGD-450 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 450 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D20BGD-450 | 450 MHz | 450 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D20BGD | 3A991.B.2.B | SigmaQuad-II+ | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 785 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 19 Bit | SRAM | 36 Mbit | 0.24 A | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||||||||||||||||||
![]() | Mfr Part No GS8342T11BD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T11BD-400I | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342T11BD | e0 | 3A991.B.2.B | SigmaQuad-II+ | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 610 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 36 Mbit | 0.225 A | 37748736 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||
![]() | Mfr Part No GS8342D36BD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D36BD-300I | 300 MHz | 300 MHz | + 85 C | DDR | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.35 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342D36BD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 685 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | SRAM | 36 Mbit | 0.21 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D06BGD-400 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D06BGD-400 | 400 MHz | 400 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D06BGD | 3A991.B.2.B | SigmaQuad-II+ | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 705 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 20 Bit | SRAM | 36 Mbit | 0.225 A | 33554432 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||
![]() | Mfr Part No GS8342S08BGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342S08BGD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaSIO-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342S08BGD | 3A991.B.2.B | SigmaSIO DDR-II | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 615 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 0.215 A | 33554432 bit | Industrial | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||
![]() | Mfr Part No GS8342R09BD-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 333 MHz | DDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342R09BD-333 | 333 MHz | 333 MHz | 1.9 V | + 70 C | 1.7 V | 0 C | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 515 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 20 Bit | 36 Mbit | 0.195 A | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||
![]() | Mfr Part No GS8672T18BE-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 200 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8672T18BE-200I | 200 MHz | + 85 C | DDR-II | - 40 C | Yes | SMD/SMT | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.92 | Compliant | No | 1.9 V | 1.7 V | 1.8 V | SigmaDDR-II | Tray | GS8672T18BE | 3A991.B.2.B | SigmaDDR-II | 100 °C | -40 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 720 mA | 4 M x 18 | 3-STATE | 1.5 mm | 18 | 22 b | SRAM | 72 Mb | 72 | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 17 mm | 15 mm | No | |||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342S36BGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342S36BGD-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaSIO-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342S36BGD | 3A991.B.2.B | SigmaSIO DDR-II | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 685 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 19 Bit | SRAM | 36 Mbit | 0.195 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||
![]() | Mfr Part No GS8342R18BD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342R18BD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342R18BD | e0 | 3A991.B.2.B | SigmaDDR-II B4 | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 395 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.175 A | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||||||||||||||||
![]() | Mfr Part No GS8662Q18BD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q18BD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 4.81 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662Q18BD | e0 | 3A991.B.2.B | SigmaQuad-II | Tin/Lead (Sn63Pb37) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 930 mA | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||
![]() | Mfr Part No UPD44165362BF5-E40-EQ3-A | Renesas | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 250 MHz | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD44165362BF5-E40-EQ3-A | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | NOT SPECIFIED | 5.84 | Non-Compliant | Yes | 1.8 V | Yes | 3A991.B.2.A | 70 °C | 0 °C | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 2 | SYNCHRONOUS | 0.69 mA | 512KX36 | 3-STATE | 1.46 mm | 36 | 18 b | 18 Mb | 0.33 A | 18874368 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342QT07BGD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342QT07BGD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342QT07BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 785 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 33554432 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||
![]() | Mfr Part No GS8342T37BD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 165 | 0.45 ns | 400 MHz | DDR | GSI TECHNOLOGY | GSI Technology | GS8342T37BD-400I | 400 MHz | 1.9 V | 1.7 V | Surface Mount | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | No | FBGA | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.78 mA | Pipelined | 1MX36 | 3-STATE | 1.4 mm | 36 | 19 Bit | 36 Mbit | 0.225 A | 37748736 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662T36BD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662T36BD-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.2 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662T36BD | e0 | No | 3A991.B.2.B | SigmaDDR-II B2 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 630 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||
![]() | Mfr Part No GS8342Q10BD-357 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 357 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342Q10BD-357 | 357 MHz | 357 MHz | 1.9 V | + 70 C | 1.7 V | 0 C | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.36 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | 3A991.B.2.B | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 945 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | 36 Mbit | 0.245 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342DT37BGD-450 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 450 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT37BGD-450 | 450 MHz | 450 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS8342DT37BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ B4 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 1.015 A | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 18 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||
![]() | Mfr Part No GS8342T11BD-550 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 550 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T11BD-550 | 550 MHz | 550 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342T11BD | e0 | 3A991.B.2.B | SigmaQuad-II+ | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 800 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 36 Mbit | 0.255 A | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||
![]() | Mfr Part No GS8662R09BD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662R09BD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.49 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662R09BD | e0 | No | 3A991.B.2.B | SigmaDDR-II B4 | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 425 mA | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 72 Mb | 0.205 A | 75497472 bit | Commercial | PARALLEL | COMMON | STANDARD SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||
![]() | Mfr Part No GS8342DT20BGD-500I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (15x13) | 165 | 0.45 ns | GS8342D | GSI Technology | 500 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT20BGD-500I | 500 MHz | 500 MHz | 1.9 V | + 85 C | DDR | GSI Technology Inc. | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.36 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342DT20BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | Memory & Data Storage | SRAM - Quad Port, Synchronous | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 500 MHz | 865 mA | SRAM | Parallel | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | - | 19 Bit | SRAM | 36 Mb | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 2M x 18 | 15 mm | 13 mm | No |
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