The category is 'Memory'
Memory (497)
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- Power Supplies:
1.5/1.8,1.8 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8662TT20BGD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT20BGD-400I | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | SMD/SMT | 18 Bit | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.2 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | SigmaDDR-II+ | 1.8000 V | -40 to 100 °C | Tray | GS8662TT20BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 635 mA | 0.45 | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 21 b | SRAM | 72 Mb | 0.255 A | 72 | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||
![]() | Mfr Part No GS8342D11BD-550I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 550 MHz | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D11BD-550I | 550 MHz | 550 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | SMD/SMT | 9 Bit | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.36 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | 3A991.B.2.B | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 950 mA | 0.45 | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 20 b | 36 Mb | 0.275 A | 36 | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||
![]() | Mfr Part No GS8342D20BD-500I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 500 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D20BD-500I | 500 MHz | 500 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.35 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | GS8342D20BD | 3A991.B.2.B | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 865 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 19 Bit | 36 Mbit | 0.26 A | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | ||||||||||||||||
![]() | Mfr Part No GS8342D20BD-550 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 550 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D20BD-550 | 550 MHz | 550 MHz | + 70 C | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.35 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | GS8342D20BD | 3A991.B.2.B | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 0.94 mA | Pipelined | 4MX18 | 3-STATE | 1.4 mm | 18 | 19 Bit | 36 Mbit | 0.265 A | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||
![]() | Mfr Part No GS8342T07BD-450 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 165 | 0.45 ns | 450 MHz | DDR | GSI TECHNOLOGY | GSI Technology | GS8342T07BD-450 | 450 MHz | Surface Mount | 8 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Compliant | No | FBGA | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | e0 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.67 mA | Pipelined | 4MX8 | 3-STATE | 1.4 mm | 8 | 21 Bit | 36 Mbit | 0.23 A | 33554432 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||
![]() | Mfr Part No GS8342DT38BD-500I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 500 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT38BD-500I | 500 MHz | 500 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 1.125 A | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 18 Bit | 36 Mbit | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | |||||||||||||||||||||
![]() | Mfr Part No GS8662TT37BD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT37BD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662TT37BD | e0 | No | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 625 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 72 Mbit | 0.22 A | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||
![]() | Mfr Part No GS8182T19BD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 400 MHz | GSI TECHNOLOGY | GSI Technology | GS8182T19BD-400I | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.28 | Compliant | No | 1.8 V | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.52 mA | 1MX18 | 3-STATE | 1.4 mm | 18 | 19 b | 18 Mb | 0.185 A | 18874368 bit | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662T36BGD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662T36BGD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.2 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662T36BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II B2 | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 635 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 21 Bit | SRAM | 72 Mb | 75497472 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||
![]() | Mfr Part No GS8342QT19BD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 333 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342QT19BD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Compliant | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 895 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 20 Bit | 36 Mbit | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||
![]() | Mfr Part No GS8342DT11BD-550 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 550 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342DT11BD-550 | 550 MHz | 550 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342DT11BD | e0 | No | 3A991.B.2.B | SigmaQuad-II+ | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | OTHER | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 940 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 20 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||
![]() | Mfr Part No GS8342QT07BGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342QT07BGD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 8 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342QT07BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 895 mA | Pipelined | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 21 Bit | SRAM | 36 Mbit | 33554432 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||
![]() | Mfr Part No GS8342TT38BD-500 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 500 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342TT38BD-500 | 500 MHz | 500 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.35 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342TT38BD | e0 | 3A991.B.2.B | SigmaQuad-II+ | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 945 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 19 Bit | SRAM | 36 Mbit | 37748736 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||||||
![]() | Mfr Part No GS8662T36BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662T36BGD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 4.67 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662T36BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II B2 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 625 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||||
![]() | Mfr Part No GS8662TT37BGD-450 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 450 MHz | DDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT37BGD-450 | 450 MHz | 450 MHz | + 70 C | 0 C | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Compliant | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | Bulk | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 900 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 72 Mbit | 0.26 A | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | ||||||||||||||
![]() | Mfr Part No GS8182T19BD-435 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 435 MHz | DDR | GSI TECHNOLOGY | GSI Technology | GS8182T19BD-435 | 435 MHz | 1.9 V | 1.7 V | Surface Mount | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.46 | Compliant | No | FBGA | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.645 mA | Pipelined | 1MX18 | 3-STATE | 1.4 mm | 18 | 19 Bit | 18 Mbit | 0.19 A | 18874368 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||
![]() | Mfr Part No GS8342D11BGD-450I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | 450 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D11BGD-450I | 450 MHz | 450 MHz | 1.9 V | + 85 C | 1.7 V | - 40 C | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 100 °C | Bulk | 3A991.B.2.B | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 795 mA | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | 20 Bit | 36 Mbit | 0.25 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||
![]() | Mfr Part No GS8662T18BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS8662T18BGD-250 | 250 MHz | 1.9 V | 1.7 V | 3 | 18 Bit | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.34 | Compliant | Yes | FBGA | 1.8 V | Synchronous | 1.8000 V | 0 to 85 °C | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.425 mA | 0.45 | 4MX18 | 3-STATE | 1.4 mm | 18 | 22 b | 72 Mb | 72 | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||||
![]() | Mfr Part No GS8662T18BGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662T18BGD-250I | 250 MHz | 250 MHz | 1.9 V | + 85 C | DDR-II | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662T18BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II B2 | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 435 mA | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 22 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||
![]() | Mfr Part No GS8662T18BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | YES | 165 | 0.45 ns | 300 MHz | DDR | GSI TECHNOLOGY | GSI Technology | GS8662T18BGD-300 | 300 MHz | 3 | Surface Mount | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.33 | Compliant | Yes | FBGA | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.495 mA | Pipelined | 4MX18 | 3-STATE | 1.4 mm | 18 | 22 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 15 mm | 13 mm | No |
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