The category is 'Memory'
Memory (497)
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1.5/1.8,1.8 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Boot Block | Common Flash Interface | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8662D09BD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662D09BD-400I | 400 MHz | 400 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.36 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662D09BD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 745 mA | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 72 Mbit | 0.27 A | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662R08BD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662R08BD-250 | 250 MHz | + 70 C | DDR | 0 C | Yes | SMD/SMT | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.36 | N | No | 1.9 V | 1.7 V | 1.8 V | SigmaDDR-II | Tray | GS8662R08BD | e0 | No | 3A991.B.2.B | SigmaDDR-II B4 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | SYNCHRONOUS | 425 mA | 8 M x 8 | 3-STATE | 1.4 mm | 8 | SRAM | 67108864 bit | PARALLEL | COMMON | STANDARD SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662D09BD-350 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 350 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662D09BD-350 | 350 MHz | 350 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.36 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8662D09BD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 0.695 mA | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 21 Bit | SRAM | 72 Mbit | 0.25 A | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342Q18AE-250M | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 165 | 0.45 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS8342Q18AE-250M | 2097152 words | 2000000 | 125 °C | -55 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.76 | No | 1.8 V | 3A991.B.2.B | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | MILITARY | 1.7 V | SYNCHRONOUS | 0.8 mA | 2MX18 | 3-STATE | 1.5 mm | 18 | 0.3 A | 36 | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662TT07BGD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662TT07BGD-300I | 300 MHz | 300 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 8 Bit | 8 MWords | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.22 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II+ | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662TT07BGD | e1 | Yes | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 505 mA | Pipelined | 8 M x 8 | 3-STATE | 1.4 mm | 8 | 22 Bit | SRAM | 72 Mbit | 0.23 A | 67108864 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342S18BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342S18BGD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 4.9 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaSIO-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342S18BGD | 3A991.B.2.B | SigmaSIO DDR-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 530 mA | 450 ps | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 20 Bit | SRAM | 36 Mbit | 0.2 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD44325182BF5-E33-FQ1-A | Renesas Electronics America | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 300 MHz | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD44325182BF5-E33-FQ1-A | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 5.77 | Yes | 1.8 V | 3A991 | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.69 mA | 2MX18 | 3-STATE | 1.46 mm | 18 | 0.32 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D18BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D18BGD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 1.74 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D18BGD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 460 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 19 Bit | SRAM | 36 Mbit | 0.185 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662Q18BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 300 MHz | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q18BGD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | 1.7 V | 0 C | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.17 | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | 1.8000 V | Commercial grade | 0 to 85 °C | GS8662Q18BGD | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 0.85 mA | 4MX18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No UPD44165362AF5-E50-EQ2 | NEC | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.45 ns | 200 MHz | RENESAS ELECTRONICS CORP | Renesas Electronics Corporation | UPD44165362AF5-E50-EQ2 | 524288 words | 512000 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | 5.86 | No | 3A991.B.2.A | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.5/1.8,1.8 V | SYNCHRONOUS | 0.71 mA | 512KX36 | 3-STATE | 36 | 0.27 A | 18874368 bit | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D36BGD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D36BGD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.32 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D36BGD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 675 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 18 Bit | SRAM | 36 Mbit | 0.2 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1665KV18-550BZXC | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | 165-LBGA | YES | 165-FBGA (15x17) | 165 | 0.45 ns | CY7C1665 | Infineon Technologies | 550 MHz | 525 | CYPRESS SEMICONDUCTOR CORP | Parallel | Infineon | CY7C1665KV18-550BZXC | 550 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | SMD/SMT | 4194304 words | 4000000 | 70 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 40 | 2.33 | Details | Yes | 1.9 V | 1.7 V | 1.8 V | 0°C ~ 70°C (TA) | Tray | - | e1 | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | Memory & Data Storage | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 144Mbit | SYNCHRONOUS | 550 MHz | 1.52 A | 450 ps | SRAM | Parallel | 4 M x 36 | 3-STATE | 1.4 mm | 36 | - | SRAM | 0.5 A | 150994944 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 4M x 36 | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS61QDB24M18-300M3L | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 165 | 165 | 0.45 ns | 300 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS61QDB24M18-300M3L | QDR | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Obsolete | BGA | 40 | 5.18 | Compliant | Yes | 1.8 V | e1 | Yes | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 300 MHz | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.89 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.71 V | Parallel | 1.89 V | 1.71 V | 9 MB | 2 | 800 mA | SYNCHRONOUS | 0.8 mA | 7.5 ns | 4MX18 | 3-STATE | 1.4 mm | 18 | 21 b | 72 Mb | 75497472 bit | 300 MHz | PARALLEL | SEPARATE | Synchronous | 18 b | DDR SRAM | 1.7 V | 17 mm | 15 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GE28F640W18BD60 | Intel | Datasheet | - | - | Min: 1 Mult: 1 | YES | 56 | 60 ns | INTEL CORP | Intel Corporation | GE28F640W18BD60 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA56,7X8,30 | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | 30 | 7.51 | No | 1.8 V | e0 | 3A991.B.1.A | NOR TYPE | TIN LEAD | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 240 | 1 | 0.75 mm | compliant | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.04 mA | 4MX16 | 1 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 8,127 | 4K,32K | 4 words | BOTTOM | YES | 9 mm | 7.7 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662D18BGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662D18BGD-333I | 333 MHz | 333 MHz | + 85 C | DDR | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.3 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8662D18BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 640 mA | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1415KV18-300BZXI | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1415 | 300 MHz | 1360 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1415KV18-300BZXI | 300 MHz | + 85 C | Volatile | Infineon Technologies | - 40 C | Yes | 3 | SMD/SMT | 1048576 words | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 30 | 5.55 | Details | Yes | 1.9 V | 1.7 V | 1.8 V | -40°C ~ 85°C (TA) | Tray | CY7C1415KV18 | e1 | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | SYNCHRONOUS | 300 MHz | 730 mA | 450 ps | SRAM | Parallel | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 0.27 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 1M x 36 | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1520KV18-250BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1520 | 250 MHz | DDR | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1520KV18-250BZCT | 250 MHz | 250 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | Active | 5.82 | N | No | FBGA | 1.9 V | 1.7 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | Reel | CY7C1520KV18 | 3A991.B.2.A | Synchronous | 8542.32.00.41 | SRAM - Synchronous, DDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.5/1.8,1.8 V | COMMERCIAL | 72 Mbit | 1 | SYNCHRONOUS | 250 MHz | 530 mA | 450 ps | SRAM | Parallel | Pipelined | 2 M x 36 | 3-STATE | 36 | - | 21 Bit | 72 Mb | 75497472 bit | Commercial | PARALLEL | COMMON | STANDARD SRAM | 1.7 V | 2M x 36 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1512KV18-250BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1512 | 250 MHz | QDR | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1512KV18-250BZCT | 250 MHz | 250 MHz | 1.9 V | + 70 C | Volatile | Infineon Technologies | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 20 | 5.26 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | Reel | CY7C1512KV18 | e0 | No | 3A991.B.2.A | Synchronous | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 235 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 250 MHz | 650 mA | 450 ps | SRAM | Parallel | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | - | 21 Bit | 72 Mb | 75497472 bit | Commercial | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 4M x 18 | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1313KV18-250BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1313 | 250 MHz | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1313KV18-250BZCT | 250 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | 3 | SMD/SMT | 1048576 words | 1000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 20 | 5.55 | N | No | 1.9 V | 1.7 V | 1.8 V | 0°C ~ 70°C (TA) | Reel | CY7C1313KV18 | e0 | No | 3A991.B.2.A | Synchronous | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 235 | 1 | 1 mm | compliant | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 18 Mbit | SYNCHRONOUS | 250 MHz | 440 mA | 450 ps | SRAM | Parallel | 1 M x 8 | 3-STATE | 1.4 mm | 18 | - | 0.25 A | 18874368 bit | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 1M x 18 | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1512KV18-250BZXIT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1512 | 250 MHz | QDR | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1512KV18-250BZXIT | 250 MHz | 250 MHz | 1.9 V | + 85 C | Volatile | Infineon Technologies | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 30 | 5.23 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 85 °C | Reel | CY7C1512KV18 | e1 | Yes | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 250 MHz | 650 mA | 450 ps | SRAM | Parallel | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | - | 21 Bit | 72 Mb | 75497472 bit | Industrial | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 4M x 18 | 15 mm | 13 mm |
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