The category is 'Memory'
Memory (497)
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- Power Supplies:
1.5/1.8,1.8 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Automotive | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | EU RoHS | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | Size / Dimension | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Frequency Stability | Output | Pin Count | JESD-30 Code | Function | Base Resonator | Current - Supply (Max) | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Current - Supply (Disable) (Max) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Data Rate | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Absolute Pull Range (APR) | Standby Voltage-Min | Product Category | Memory Organization | Height Seated (Max) | Length | Width | Radiation Hardening | Ratings |
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![]() | Mfr Part No CY7C1414KV18-250BZXCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1414 | 250 MHz | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1414KV18-250BZXCT | 250 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | 3 | SMD/SMT | 1048576 words | 1000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 30 | 5.4 | Details | Yes | 1.9 V | 1.7 V | 1.8 V | 0°C ~ 70°C (TA) | Reel | CY7C1414KV18 | e1 | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | SYNCHRONOUS | 250 MHz | 730 mA | 450 ps | SRAM | Parallel | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 0.26 A | 36 | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 1M x 36 | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No K7R321882M-FC16000 | Samsung Semiconductor | Datasheet | - | - | Min: 1 Mult: 1 | YES | 165 | 0.5 ns | No | 166.66 MHz | Not Compliant | SAMSUNG SEMICONDUCTOR INC | Ball | Samsung Semiconductor | K7R321882M-FC16000 | 3 | Surface Mount | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | 0.95 | 17 | RECTANGULAR | GRID ARRAY, LOW PROFILE | 15 | Obsolete | 165 | No | 40 | 5.92 | No | BGA | FBGA | 1.8 V | e1 | No | Obsolete | TIN SILVER COPPER | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | SYNCHRONOUS | 0.65 mA | 2MX18 | 3-STATE | 1.4 mm | 18 | 0.27 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 17 mm | 15 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8182D19BD-400I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 400 MHz | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8182D19BD-400I | 400 MHz | + 85 C | DDR | - 40 C | Yes | SMD/SMT | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | No | 1.9 V | 1.7 V | 1.8 V | SigmaQuad-II+ | Tray | GS8182D19BD | e0 | No | 3A991.B.2.B | SigmaQuad II+ | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | not_compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 18 Mbit | SYNCHRONOUS | 615 mA | 1 M x 18 | 3-STATE | 1.4 mm | 18 | SRAM | 0.185 A | 18874368 bit | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342T18BD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | DDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342T18BD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.34 | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaDDR-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342T18BD | 3A991.B.2.B | SigmaDDR-II B2 | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 525 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.205 A | 37748736 bit | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1413KV18-250BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1413 | 250 MHz | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1413KV18-250BZCT | 250 MHz | + 70 C | Volatile | Infineon Technologies | 0 C | Yes | SMD/SMT | 2097152 words | 2000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | Active | 5.81 | N | No | 1.9 V | 1.7 V | 0°C ~ 70°C (TA) | Reel | CY7C1413KV18 | 3A991.B.2.A | Synchronous | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 1 mm | compliant | R-PBGA-B165 | Not Qualified | 1.5/1.8,1.8 V | COMMERCIAL | 36 Mbit | SYNCHRONOUS | 250 MHz | 470 mA | 450 ps | SRAM | Parallel | 2 M x 18 | 3-STATE | 18 | - | 0.26 A | 37748736 bit | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 2M x 18 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1515KV18-300BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1515 | 300 MHz | QDR | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1515KV18-300BZCT | 300 MHz | 300 MHz | 1.9 V | + 70 C | Volatile | Infineon Technologies | 1.7 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 20 | 5.26 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | Reel | CY7C1515KV18 | e0 | No | 3A991.B.2.A | Synchronous | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 235 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 300 MHz | 790 mA | 450 ps | SRAM | Parallel | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | - | 19 Bit | 72 Mb | 75497472 bit | Commercial | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 2M x 36 | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1425KV18-250BZCT | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1425 | 250 MHz | QDR | 1000 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1425KV18-250BZCT | 250 MHz | 250 MHz | 1.9 V | + 85 C | Volatile | Infineon Technologies | 1.7 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 9 Bit | 4 MWords | 4000000 | 70 °C | Tape & Reel (TR) | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | Active | 20 | 5.51 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 70 °C | Reel | CY7C1425KV18 | e0 | 3A991.B.2.A | Synchronous | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II | 1.7V ~ 1.9V | BOTTOM | BALL | 235 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 250 MHz | 590 mA | 450 ps | SRAM | Parallel | Pipelined | 4 M x 9 | 3-STATE | 1.4 mm | 9 | - | 21 Bit | 36 Mb | 0.26 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 4M x 9 | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C15632KV18-500BZXI | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C15632 | 500 MHz | QDR | 272 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C15632KV18-500BZXI | 500 MHz | 500 MHz | + 85 C | QDR | Infineon Technologies | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 30 | 5.63 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 85 °C | Tray | CY7C15632KV18 | e1 | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II+ | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 500 MHz | 850 mA | 450 ps | SRAM | QDR-II | Parallel | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | - | 72 Mb | 0.36 A | 72 | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 4M x 18 | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1270KV18-400BZXI | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | 1 Week | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1270 | 400 MHz | DDR | 680 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1270KV18-400BZXI | 400 MHz | 400 MHz | + 85 C | Volatile | Infineon Technologies | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 30 | 5.55 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Industrial grade | -40 to 85 °C | Tray | CY7C1270KV18 | e1 | 3A991 | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, DDR II+ | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 1 | SYNCHRONOUS | 400 MHz | 690 mA | 200 ps | SRAM | Parallel | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 19 Bit | 36 Mb | 0.31 A | 36 | Industrial | PARALLEL | COMMON | DDR SRAM | 1.7 V | 1M x 36 | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No CY7C1565KV18-500BZXI | Infineon Technologies | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | FBGA-165 | YES | 165-FBGA (13x15) | 165 | 0.45 ns | CY7C1565 | 500 MHz | 272 | CYPRESS SEMICONDUCTOR CORP | Parallel | CY7C1565KV18-500BZXI | 500 MHz | + 85 C | QDR | Infineon Technologies | - 40 C | Yes | 3 | SMD/SMT | 2097152 words | 2000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | 30 | 5.52 | Details | Yes | 1.9 V | 1.7 V | 1.8 V | -40°C ~ 85°C (TA) | Tray | CY7C1565KV18 | e1 | 3A991.B.2.A | Synchronous | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAM - Synchronous, QDR II+ | 1.7V ~ 1.9V | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 500 MHz | 1.21 A | 450 ps | SRAM | QDR-II | Parallel | 2 M x 36 | 3-STATE | 1.4 mm | 36 | - | 0.36 A | 72 | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 2M x 36 | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8182D19BGD-435 | GSI | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 435 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8182D19BGD-435 | 435 MHz | 435 MHz | + 70 C | DDR | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.21 | Compliant | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II+ | 1.8000 V | Commercial grade | 0 to 70 °C | Tray | GS8182D19BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad II+ | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 18 Mbit | 2 | SYNCHRONOUS | 770 mA | Pipelined | 1 M x 18 | 3-STATE | 1.4 mm | 18 | 18 Bit | SRAM | 18 Mbit | 0.19 A | 18874368 bit | Commercial | PARALLEL | SEPARATE | DDR SRAM | 1.7 V | SRAM | 15 mm | 10 mm | No | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342Q36BD-250IT | GSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | 4-SMD, No Lead | YES | 165 | 0.45 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS8342Q36BD-250IT | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.36 | No | 1.8 V | -20°C ~ 70°C | Tape & Reel (TR) | SiT8208 | 0.276 L x 0.197 W (7.00mm x 5.00mm) | Active | 3A991.B.2.B | XO (Standard) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | 2.5V | BOTTOM | BALL | 1 | 1 mm | compliant | 20MHz | ±10ppm | LVCMOS, LVTTL | 165 | R-PBGA-B165 | Standby (Power Down) | MEMS | 33mA | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 70µA | SYNCHRONOUS | 0.835 mA | 1MX36 | 3-STATE | 1.4 mm | 36 | 0.215 A | 37748736 bit | PARALLEL | SEPARATE | QDR SRAM | -- | 1.7 V | 0.039 (1.00mm) | 15 mm | 13 mm | -- | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342Q18BD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 165 | 0.45 ns | 250 MHz | QDR | GSI TECHNOLOGY | GSI Technology | GS8342Q18BD-250 | 250 MHz | 1.9 V | 1.7 V | Surface Mount | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.33 | No | FBGA | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | 3A991.B.2.B | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 2 | SYNCHRONOUS | 0.665 mA | Pipelined | 2MX18 | 3-STATE | 1.4 mm | 18 | 20 Bit | 36 Mbit | 0.205 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D36BGD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (15x13) | 165 | 0.45 ns | GS8342D | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D36BGD-300I | 300 MHz | 300 MHz | + 85 C | DDR | GSI Technology Inc. | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.32 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342D36BGD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | SRAM - Quad Port, Synchronous | 1.7V ~ 1.9V | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 300 MHz | 685 mA | SRAM | Parallel | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 18 Bit | SRAM | 36 Mbit | 0.21 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 1M x 36 | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662Q36BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 250 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q36BGD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | 1.7 V | 0 C | 3 | Surface Mount | SMD/SMT | 36 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.28 | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | GS8662Q36BGD | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 895 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D18BGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 333 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D18BGD-333I | 333 MHz | 333 MHz | 1.9 V | + 85 C | DDR | 1.7 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.17 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Industrial grade | -40 to 100 °C | Tray | GS8342D18BGD | 3A991.B.2.B | SigmaQuad-II | 100 °C | -40 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 615 mA | Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 19 Bit | SRAM | 36 Mbit | 0.215 A | 37748736 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662Q18BGD-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q18BGD-300I | 300 MHz | 300 MHz | + 85 C | DDR | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 4 MWords | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 1.62 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | 0.644808 oz | Industrial grade | -40 to 100 °C | Tray | GS8662Q18BGD | e1 | Yes | 3A991.B.2.B | SigmaQuad-II | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 860 mA | 450 ps | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8662Q09BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 0.45 ns | 250 MHz | QDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8662Q09BGD-250 | 250 MHz | 250 MHz | + 70 C | 0 C | 3 | Surface Mount | SMD/SMT | 9 Bit | 8 MWords | 8000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.32 | Compliant | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | 1.8000 V | Commercial grade | 0 to 85 °C | GS8662Q09BGD | e1 | Yes | 3A991.B.2.B | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 720 mA | Pipelined | 8 M x 9 | 3-STATE | 1.4 mm | 9 | 22 Bit | 72 Mbit | 75497472 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | 15 mm | 13 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D08BD-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 300 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D08BD-300 | 300 MHz | 300 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | SMD/SMT | 8 Bit | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.32 | N | No | FBGA | 1.9 V | 1.7 V | 1.8 V | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D08BD | 3A991.B.2.B | SigmaQuad-II | 85 °C | 0 °C | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.8 V | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 530 mA | 0.45 | 4 M x 8 | 3-STATE | 1.4 mm | 8 | 20 b | SRAM | 36 Mb | 0.2 A | 36 | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8342D36BGD-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | BGA-165 | YES | 165 | 0.45 ns | GSI Technology | 250 MHz | QDR | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8342D36BGD-250 | 250 MHz | 250 MHz | 1.9 V | + 70 C | DDR | 1.7 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.32 | Details | Yes | FBGA | 1.9 V | 1.7 V | 1.8 V | Synchronous | SigmaQuad-II | 1.8000 V | Commercial grade | 0 to 85 °C | Tray | GS8342D36BGD | 3A991.B.2.B | SigmaQuad-II | PIPELINED ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 675 mA | Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 18 Bit | SRAM | 36 Mbit | 0.185 A | 37748736 bit | Commercial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm |
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