The category is 'Memory'
Memory (27)
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- Clock Frequency-Max (fCLK)
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- Power Supplies:
1.5 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Address Bus Width (bit) | Automotive | Base Product Number | Chip Density (bit) | Clock Frequency-Max (fCLK) | Data Bus Width (bit) | DRAM Type | ECCN (US) | EU RoHS | Ihs Manufacturer | Interface Type | Lead Free Status / RoHS Status | Lifetime @ Temp. | Manufacturer | Manufacturer Part Number | Maximum Access Time (ns) | Maximum Clock Rate | Maximum Clock Rate (MHz) | Maximum Operating Supply Voltage (V) | Maximum Operating Temperature (°C) | Memory Types | Mfr | Minimum Operating Supply Voltage (V) | Minimum Operating Temperature (°C) | Moisture Sensitivity Levels | Mounting | Number of Bits/Word (bit) | Number of I/O Lines | Number of I/O Lines (bit) | Number of Internal Banks | Number of Words | Number of Words Code | Number of Words per Bank | Operating Current (mA) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supplier Temperature Grade | Supply Voltage-Nom (Vsup) | Typical Operating Supply Voltage (V) | Usage Level | Voltage Rated | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Capacitance | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | ESR (Equivalent Series Resistance) | Failure Rate | Lead Spacing | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Manufacturer Size Code | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Features | Self Refresh | Number of Banks | Memory Organization | Height Seated (Max) | Length | Width | Radiation Hardening | Lead Free |
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 | Mfr Part No K4B1G1646G-BCH9 | Samsung | Datasheet | 724 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B1G1646G-BCH9 | 3 | 67108864 words | 64000000 | PLASTIC/EPOXY | FBGA | FBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | NOT SPECIFIED | 8.58 | Yes | 1.5 V | e1 | Yes | Tin/Silver/Copper (Sn/Ag/Cu) | DRAMs | CMOS | BOTTOM | BALL | 225 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.5 V | 0.17 mA | 64MX16 | 3-STATE | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4B2G0846D-HCH9 | Samsung | Datasheet | 1592 | - | Min: 1 Mult: 1 | YES | 78 | 0.255 ns | 667 MHz | SAMSUNG SEMICONDUCTOR INC | Samsung Semiconductor | K4B2G0846D-HCH9 | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.79 | Yes | 1.5 V | DRAMs | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B78 | Not Qualified | 1.5 V | OTHER | 0.135 mA | 256MX8 | 3-STATE | 8 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No H5TQ2G63BFR-H9C | Hynix | Datasheet | 864 | - | Min: 1 Mult: 1 | YES | 96 | 20 ns | 667 MHz | SK HYNIX INC | SK Hynix Inc | H5TQ2G63BFR-H9C | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.79 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.19 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No IS43TR81280A-15GBL | ISSI, Integrated Silicon Solution Inc | Datasheet | 726 |
| Min: 1 Mult: 1 | 12 Weeks | Surface Mount | 78-TFBGA | YES | 78-TWBGA (8x10.5) | 78 | 12 ns | IS43TR81280 | 667 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43TR81280A-15GBL | 667 MHz | Volatile | ISSI, Integrated Silicon Solution Inc | Surface Mount | 8 Bit | 134217728 words | 128000000 | 95 °C | Bulk | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Discontinued at Digi-Key | 5.61 | Yes | TWBGA | 1.5 V | Commercial grade | 0°C ~ 70°C (TA) | - | EAR99 | DDR3 SDRAM | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.32 | DRAMs | 1.425V ~ 1.575V | BOTTOM | BALL | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | Not Qualified | 1.5000 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1Gbit | 1 | SYNCHRONOUS | 667 MHz | 0.275 mA | 20 ns | DRAM | Parallel | 8 Bit | 128M x 8 | 3-STATE | 1.2 mm | 8 | 15ns | 14 Bit | 1 Gbit | 1 | Commercial | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 8 | 128M x 8 | 10.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No H5TQ1G63DFR-H9C | Hynix | Datasheet | 24000 | - | Min: 1 Mult: 1 | YES | 96 | 667 MHz | SK HYNIX INC | SK Hynix Inc | H5TQ1G63DFR-H9C | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 20 | 5.79 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.2 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No W3J512M32GT-800B2M | Microchip | Datasheet | - | - | Min: 1 Mult: 1 | YES | 204 | 0.4 ns | 400 MHz | MICROSEMI CORP | Microsemi Corporation | W3J512M32GT-800B2M | KYOCERA AVX | 536870912 words | 512000000 | 125 °C | -55 °C | Bulk | PLASTIC/EPOXY | FBGA | FBGA, BGA204,12X17,32 | BGA204,12X17,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | Active | 5.63 | No | 1.5 V | * | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B204 | Not Qualified | 1.575 V | 1.5 V | MILITARY | 1.425 V | 1 | SYNCHRONOUS | 0.76 mA | 512MX32 | 3-STATE | 3.84 mm | 32 | 0.072 A | 17179869184 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | SINGLE BANK PAGE BURST | YES | 14.6 mm | 10.1 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No HMT351U6EFR8C-H9 | SK HYNIX INC | Datasheet | - | - | Min: 1 Mult: 1 | NO | 240 | 667 MHz | SK HYNIX INC | SK Hynix Inc | HMT351U6EFR8C-H9 | 536870912 words | 512000000 | 85 °C | UNSPECIFIED | DIMM | DIMM, DIMM240,40 | DIMM240,40 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | DIMM | NOT SPECIFIED | 5.68 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH; WD-MAX | 8542.32.00.36 | DRAMs | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1 mm | compliant | 240 | R-XDMA-N240 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 1.12 mA | 512MX64 | 3-STATE | 30.13 mm | 64 | 0.192 A | 34359738368 bit | COMMON | DDR DRAM MODULE | 8192 | DUAL BANK PAGE BURST | YES | 133.35 mm | 3.64 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No W632GG6KB15K | Winbond | Datasheet | 22000 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W632GG6KB15K | 134217728 words | 128000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.72 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.37 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.065 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No K4B2G1646Q-BCK0000 | Samsung Semiconductor | Datasheet | 16 | - | Min: 1 Mult: 1 | YES | 96 | 0.225 ns | 17 | No | 2G | 800 MHz | 16 | DDR3 SDRAM | EAR99 | Compliant | SAMSUNG SEMICONDUCTOR INC | SSTL_1.5 | Samsung Semiconductor | K4B2G1646Q-BCK0000 | 0.225 | 1600 | 1.575 | 95 | 1.425 | 0 | Surface Mount | 16 | 16 | 8 | 134217728 words | 128000000 | 16M | 159 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | 13.3 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 7.5 | Obsolete | 96 | No | 5.83 | Compliant | Yes | FBGA | Commercial | 1.5 V | 1.5 | Obsolete | EAR99 | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.219 mA | 128Mx16 | 3-STATE | 1.2 mm | 16 | 0.011 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13.3 mm | 7.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NT5CB128M16IP-EK | Nanya | Datasheet | 8 |
| Min: 1 Mult: 1 | Through Hole | Axial | YES | 96 | 0.195 ns | 933 MHz | NANYA TECHNOLOGY CORP | -- | -- | Nanya Technology Corporation | NT5CB128M16IP-EK | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | NOT SPECIFIED | 5.25 | Yes | 1.5 V | 75V | -55°C ~ 125°C | Tape & Reel (TR) | Military, MIL-PRF-39003/1, CSR13 | 0.289 Dia x 0.686 L (7.34mm x 17.42mm) | ±10% | Active | -- | EAR99 | Hermetically Sealed | AUTO/SELF REFRESH | 10µF | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | -- | C (0.01%) | -- | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | C | 0.25 mA | 128MX16 | 3-STATE | 1 mm | 16 | 0.015 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | Military | YES | -- | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No NT5CB64M16GP-FL | Nanya | Datasheet | - | - | Min: 1 Mult: 1 | YES | 96 | 0.18 ns | 1066 MHz | NANYA TECHNOLOGY CORP | Nanya Technology Corporation | NT5CB64M16GP-FL | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | NOT SPECIFIED | 5.66 | Yes | 1.5 V | EAR99 | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.251 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.012 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J128M8JP-187E:F | Micron | Datasheet | 568 | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-187E:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.59 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1 | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J256M16RE-15E:D | Micron | Datasheet | 2400 | - | Min: 1 Mult: 1 | YES | 96 | 0.255 ns | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J256M16RE-15E:D | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.47 | Yes | 1.5 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.285 mA | 256MX16 | 3-STATE | 1.2 mm | 16 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 14 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J128M8HX-187E:D | Micron | Datasheet | 512 | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8HX-187E:D | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.43 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J64M16LA-187E:B | Micron | Datasheet | 508 | - | Min: 1 Mult: 1 | YES | 96 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J64M16LA-187E:B | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA96,9X16,32 | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.65 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 96 | R-PBGA-B96 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.38 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 15.5 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J256M4JP-15E:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 78 | 78 | 0.125 ns | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J256M4JP-15E:F | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.65 | Compliant | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 95 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | 1 | 220 mA | SYNCHRONOUS | 0.315 mA | 4 b | 256MX4 | 3-STATE | 1.2 mm | 4 | 17 b | 1 Gb | 1073741824 bit | 1.333 GHz | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J512M8RA-15E:D | Micron | Datasheet | 797 | - | Min: 1 Mult: 1 | YES | 78 | 0.255 ns | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J512M8RA-15E:D | 536870912 words | 512000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | 8.47 | Yes | 1.5 V | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.25 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.02 A | 4294967296 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 12 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J128M8JP-125:F | Micron | Datasheet | 88 | - | Min: 1 Mult: 1 | Surface Mount | YES | 78 | 78 | 0.1 ns | 800 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-125:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.64 | Compliant | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 95 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | 1 | 250 mA | SYNCHRONOUS | 0.6 mA | 8 b | 128MX8 | 3-STATE | 1.2 mm | 8 | 17 b | 1 Gb | 1073741824 bit | 1.6 GHz | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | No | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J128M8JP-187EIT:F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 78 | 0.15 ns | 533 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-187EIT:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.49 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.39 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No MT41J128M8JP-15E:F | Micron | Datasheet | 57 | - | Min: 1 Mult: 1 | YES | 78 | 0.125 ns | 667 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT41J128M8JP-15E:F | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.61 | Yes | 1.5 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | 1.5 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.49 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1 | COMMON | DDR DRAM | 8192 | 8 | 8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm |
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