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The category is 'Memory'

Memory (27)

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Clock Frequency-Max (fCLK)
I/O Type
Ihs Manufacturer
JESD-30 Code
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Manufacturer Part Number
Memory Density
Memory IC Type
Memory Width
Number of Terminals
Number of Words Code
Power Supplies

Power Supplies:
1.5 V

Image	Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	RoHS	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Number of Ports	Nominal Supply Current	Operating Mode	Supply Current-Max	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	I/O Type	Memory IC Type	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width	Radiation Hardening	Lead Free
	Mfr Part No MT41J256M16RE-125:D	Micron	Datasheet	-	-	Min: 1 Mult: 1		Surface Mount	YES	96	96	0.225 ns	800 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J256M16RE-125:D		268435456 words	256000000	85 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.66	Compliant	Yes	1.5 V	Bulk	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	95 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.36	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	compliant	96	R-PBGA-B96	Not Qualified	1.5 V	1.575 V	1.5 V	OTHER	1.425 V	1.575 V	1.425 V	1	280 mA	SYNCHRONOUS	0.32 mA	16 b	256MX16	3-STATE	1.2 mm	16	18 b	4 Gb	0.02 A	4294967296 bit	1.6 GHz	COMMON	DDR DRAM	8192	8	8	MULTI BANK PAGE BURST	YES	14 mm	10 mm	No	Lead Free
	Mfr Part No MT41J512M8RA-125:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		78	0.225 ns	800 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J512M8RA-125:D		536870912 words	512000000	85 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete			5.69		Yes	1.5 V								AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL		1	0.8 mm	unknown		R-PBGA-B78	Not Qualified		1.575 V	1.5 V	OTHER	1.425 V			1		SYNCHRONOUS	0.29 mA		512MX8	3-STATE	1.2 mm	8			0.02 A	4294967296 bit		COMMON	DDR DRAM	8192	8	8	MULTI BANK PAGE BURST	YES	12 mm	10.5 mm
	Mfr Part No MT41J512M8RA-107:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		78	0.195 ns	933 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J512M8RA-107:D		536870912 words	512000000	85 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete			5.67		Yes	1.5 V								AUTO/SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL		1	0.8 mm	unknown		R-PBGA-B78	Not Qualified		1.575 V	1.5 V	OTHER	1.425 V			1		SYNCHRONOUS	0.33 mA		512MX8	3-STATE	1.2 mm	8			0.02 A	4294967296 bit		COMMON	DDR DRAM	8192	8	8	MULTI BANK PAGE BURST	YES	12 mm	10.5 mm
	Mfr Part No K4B1G1646G-BCK0	Samsung	Datasheet	23 In Stock	-	Min: 1 Mult: 1			YES		96	0.225 ns	800 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4B1G1646G-BCK0	1	67108864 words	64000000		PLASTIC/EPOXY	FBGA	FBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete		NOT SPECIFIED	5.8		Yes	1.5 V		e3	Yes		MATTE TIN					DRAMs	CMOS	BOTTOM	BALL	225		0.8 mm	compliant		R-PBGA-B96	Not Qualified			1.5 V								0.195 mA		64MX16	3-STATE		16			0.01 A	1073741824 bit		COMMON	DDR DRAM	8192	4,8	4,8
	Mfr Part No MT41J2G4THE-125:D	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		78	0.225 ns	800 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J2G4THE-125:D		2147483648 words	2000000000	85 °C	PLASTIC/EPOXY	TFBGA	FBGA-78	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active			5.75		Yes	1.5 V								SELF REFRESH		DRAMs	CMOS	BOTTOM	BALL		1	0.8 mm	compliant		R-PBGA-B78	Not Qualified		1.575 V	1.5 V	OTHER	1.425 V			1		SYNCHRONOUS	0.31 mA		2GX4	3-STATE	1.2 mm	4			0.04 A	8589934592 bit		COMMON	DDR DRAM	8192	8	8	DUAL BANK PAGE BURST	YES	12 mm	10.5 mm
	Mfr Part No MT41J64M16LA-15EIT:B	Micron	Datasheet	-	-	Min: 1 Mult: 1			YES		96	0.125 ns	667 MHz	MICRON TECHNOLOGY INC	Micron Technology Inc	MT41J64M16LA-15EIT:B		67108864 words	64000000	85 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA96,9X16,32	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	30	5.65		Yes	1.5 V		e1		EAR99	Tin/Silver/Copper (Sn/Ag/Cu)			AUTO/SELF REFRESH	8542.32.00.32	DRAMs	CMOS	BOTTOM	BALL	260	1	0.8 mm	unknown	96	R-PBGA-B96	Not Qualified		1.575 V	1.5 V	OTHER	1.425 V			1		SYNCHRONOUS	0.42 mA		64MX16	3-STATE	1.2 mm	16			0.012 A	1073741824 bit		COMMON	DDR DRAM	8192	8	8	MULTI BANK PAGE BURST	YES	15.5 mm	9 mm
	Mfr Part No K4B1G0846G-BCH9000	Samsung	Datasheet	-	-	Min: 1 Mult: 1			YES		78	0.255 ns	667 MHz	SAMSUNG SEMICONDUCTOR INC	Samsung Semiconductor	K4B1G0846G-BCH9000		134217728 words	128000000		PLASTIC/EPOXY	FBGA	FBGA, BGA78,9X13,32	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete			5.84		Yes	1.5 V										DRAMs	CMOS	BOTTOM	BALL			0.8 mm	compliant		R-PBGA-B78	Not Qualified			1.5 V								0.13 mA		128MX8	3-STATE		8				1073741824 bit		COMMON	DDR DRAM	8192	4,8	4,8

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