The category is 'Memory'
Memory (9)
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- Command User Interface
- Data Polling
- Ihs Manufacturer
- JESD-30 Code
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- Manufacturer Part Number
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- Memory IC Type
- Memory Width
- Number of Sectors/Size
- Number of Words
- Power Supplies
- Power Supplies:
1.8,3/3.3 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Memory Types | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Nom (Vsup) | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Nominal Supply Current | Operating Mode | Supply Current-Max | Access Time | Organization | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Parallel/Serial | Sync/Async | Word Size | Memory IC Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Page Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width | Radiation Hardening |
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![]() | Mfr Part No MT29F32G08CBCBBH1-12:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08CBCBBH1-12:B | 4294967296 words | 4000000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA100,10X17,40 | RECTANGULAR | GRID ARRAY | Obsolete | 5.81 | Yes | MLC NAND TYPE | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | unknown | R-PBGA-B100 | Not Qualified | 1.8,3/3.3 V | COMMERCIAL | 0.05 mA | 4GX8 | 8 | 0.00005 A | 34359738368 bit | PARALLEL | FLASH | NO | NO | YES | 4K | 1M | 4K words | YES | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M58LT128HST8ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 80 | 64 | 85 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58LT128HST8ZA6F | FLASH, NOR | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | 30 | 5.42 | Compliant | Yes | 1.8 V | Tape & Reel (TR) | e1 | Yes | 3A991.B.1.A | NOR TYPE | TIN SILVER COPPER | 85 °C | -40 °C | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | Not Qualified | 1.8 V | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | Parallel/Serial | 2 V | 1.7 V | 28 mA | SYNCHRONOUS | 0.053 mA | 85 | 8MX16 | 1.2 mm | 16 | 23 b | 128 Mb | 0.000075 A | 128 | PARALLEL | Asynchronous | 16 b | FLASH | 1.8 V | NO | NO | YES | 4,127 | 16K,64K | 4 words | TOP | YES | 13 mm | 10 mm | No | ||||
![]() | Mfr Part No M58LT128HSB8ZA6 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 85 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58LT128HSB8ZA6 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | 30 | 5.8 | No | 1.8 V | e0 | No | 3A991.B.1.A | NOR TYPE | TIN LEAD SILVER | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.053 mA | 8MX16 | 1.2 mm | 16 | 0.000075 A | 134217728 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,127 | 16K,64K | 4 words | BOTTOM | YES | 13 mm | 10 mm | ||||||||||||||||||||||
![]() | Mfr Part No MT29F32G08ABCABH1-10IT:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 100 | 100 | 20 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | MT29F32G08ABCABH1-10IT:A | 4294967296 words | 4000000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA100,10X17,40 | RECTANGULAR | GRID ARRAY | Obsolete | 5.82 | Compliant | Yes | SLC NAND TYPE | 85 °C | -40 °C | Flash Memories | CMOS | BOTTOM | BALL | 1 mm | compliant | R-PBGA-B100 | Not Qualified | 3.3 V | 1.8,3/3.3 V | INDUSTRIAL | Parallel, Serial | 3.6 V | 2.7 V | 3.7 GB | 50 mA | 0.05 mA | 4GX8 | 8 | 34 b | 32 Gb | 0.00001 A | 34359738368 bit | PARALLEL | Asynchronous | 8 b | FLASH | NO | NO | YES | 4K | 1M | 8K words | YES | |||||||||||||||||||||||||||
![]() | Mfr Part No M58LT128HSB8ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 85 ns | NUMONYX | Numonyx Memory Solutions | M58LT128HSB8ZA6F | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Transferred | BGA | NOT SPECIFIED | 5.42 | Yes | 1.8 V | 3A991.B.1.A | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.053 mA | 8MX16 | 1.2 mm | 16 | 0.000075 A | 134217728 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,127 | 16K,64K | 4 words | BOTTOM | YES | 13 mm | 10 mm | |||||||||||||||||||||||||
![]() | Mfr Part No M58LT128HST8ZA6 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 85 ns | MICRON TECHNOLOGY INC | Micron Technology Inc | M58LT128HST8ZA6 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | 30 | 5.42 | No | 1.8 V | e0 | No | 3A991.B.1.A | NOR TYPE | TIN LEAD SILVER | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 235 | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.053 mA | 8MX16 | 1.2 mm | 16 | 0.000075 A | 134217728 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,127 | 16K,64K | 4 words | TOP | YES | 13 mm | 10 mm | ||||||||||||||||||||||
![]() | Mfr Part No M58LT256JSB8ZA6F | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | NUMONYX | Numonyx Memory Solutions | M58LT256JSB8ZA6F | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Transferred | BGA | NOT SPECIFIED | 5.45 | Yes | 1.8 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.077 mA | 16MX16 | 1.2 mm | 16 | 268435456 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,255 | 16K,64K | 8 words | BOTTOM | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No M58LT256JSB8ZA6 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | NUMONYX | Numonyx Memory Solutions | M58LT256JSB8ZA6 | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA64,8X8,40 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Transferred | BGA | 5.45 | No | 1.8 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.077 mA | 16MX16 | 1.2 mm | 16 | 268435456 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,255 | 16K,64K | 8 words | BOTTOM | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No M58LT256JST8ZA6 | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 64 | 85 ns | NUMONYX | Numonyx Memory Solutions | M58LT256JST8ZA6 | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 10 X 13 MM, 1 MM PITCH, TBGA-64 | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Transferred | BGA | 5.45 | No | 1.8 V | 3A991.B.1.A | NOR TYPE | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.51 | Flash Memories | CMOS | BOTTOM | BALL | 1 | 1 mm | unknown | 64 | R-PBGA-B64 | Not Qualified | 2 V | 1.8,3/3.3 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.077 mA | 16MX16 | 1.2 mm | 16 | 0.00011 A | 268435456 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,255 | 16K,64K | 8 words | TOP | YES | 13 mm | 10 mm |
MT29F32G08CBCBBH1-12:B
Micron
Package:Memory
Price: please inquire
M58LT128HST8ZA6F
Micron
Package:Memory
Price: please inquire
M58LT128HSB8ZA6
Micron
Package:Memory
Price: please inquire
MT29F32G08ABCABH1-10IT:A
Micron
Package:Memory
Price: please inquire
M58LT128HSB8ZA6F
Micron
Package:Memory
Price: please inquire
M58LT128HST8ZA6
Micron
Package:Memory
Price: please inquire
M58LT256JSB8ZA6F
Micron
Package:Memory
Price: please inquire
M58LT256JSB8ZA6
Micron
Package:Memory
Price: please inquire
M58LT256JST8ZA6
Micron
Package:Memory
Price: please inquire
