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      Home / All Categories / Integrated Circuits (ICs) / Memory /

      The category is 'Memory'

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      • Power Supplies:

        1.8/2 V

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      Lead Free
      LP62E16128AU-70LLTF

      Mfr Part No

      LP62E16128AU-70LLTF

      		AMIC Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      48

      70 ns

      AMIC TECHNOLOGY CORP

      AMIC Technology

      LP62E16128AU-70LLTF

      131072 words

      128000

      85 °C

      -25 °C

      PLASTIC/EPOXY

      TFBGA

      TFBGA, BGA48,6X8,30

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, THIN PROFILE, FINE PITCH

      Contact Manufacturer

      5.8

      Yes

      2 V

      SRAMs

      CMOS

      BOTTOM

      BALL

      1

      0.75 mm

      unknown

      R-PBGA-B48

      Not Qualified

      2.2 V

      1.8/2 V

      OTHER

      1.65 V

      ASYNCHRONOUS

      0.025 mA

      128KX16

      3-STATE

      1.2 mm

      16

      0.000003 A

      2097152 bit

      PARALLEL

      COMMON

      APPLICATION SPECIFIC SRAM

      1.2 V

      YES

      8 mm

      6 mm

      CY62167EV18LL-55BVIT

      Mfr Part No

      CY62167EV18LL-55BVIT

      		Infineon Technologies Datasheet

      8
      In Stock

      -

      Min: 1

      Mult: 1

      Surface Mount

      VFBGA-48

      YES

      48-VFBGA (6x8)

      48

      55 ns

      CY62167

      2000

      CYPRESS SEMICONDUCTOR CORP

      Parallel

      CY62167EV18LL-55BVIT

      -

      + 85 C

      Volatile

      Infineon Technologies

      - 40 C

      Yes

      3

      SMD/SMT

      1048576 words

      1000000

      85 °C

      -40 °C

      Tape & Reel (TR)

      PLASTIC/EPOXY

      VFBGA

      VFBGA, BGA48,6X8,30

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, VERY THIN PROFILE, FINE PITCH

      Active

      Active

      NOT SPECIFIED

      5.44

      N

      No

      2.25 V

      1.65 V

      1.8 V

      MoBL

      0.007873 oz

      -40°C ~ 85°C (TA)

      Reel

      CY62167EV18LL

      e0

      No

      3A991.B.2.A

      Asynchronous

      TIN LEAD

      8542.32.00.41

      SRAM - Asynchronous

      1.65V ~ 2.25V

      BOTTOM

      BALL

      220

      1

      0.75 mm

      compliant

      R-PBGA-B48

      Not Qualified

      2.25 V

      1.8/2 V

      INDUSTRIAL

      1.65 V

      16 Mbit

      ASYNCHRONOUS

      30 mA

      55 ns

      SRAM

      Parallel

      1 M x 16

      3-STATE

      1 mm

      16

      55ns

      0.00001 A

      16777216 bit

      PARALLEL

      COMMON

      STANDARD SRAM

      1 V

      1M x 16

      8 mm

      6 mm

      M59DR032EA10ZB6

      Mfr Part No

      M59DR032EA10ZB6

      		Micron Technology Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      48

      100 ns

      STMICROELECTRONICS

      STMicroelectronics

      M59DR032EA10ZB6

      2097152 words

      2000000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      LFBGA

      7 X 12 MM, 0.75 MM PITCH, TFBGA-48

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, LOW PROFILE, FINE PITCH

      Transferred

      BGA

      NOT SPECIFIED

      5.2

      No

      1.8 V

      e0

      3A991.B.1.A

      NOR TYPE

      Tin/Lead (Sn63Pb37)

      8542.32.00.51

      Flash Memories

      CMOS

      BOTTOM

      BALL

      NOT SPECIFIED

      1

      0.75 mm

      not_compliant

      48

      R-PBGA-B48

      Not Qualified

      2.2 V

      1.8/2 V

      INDUSTRIAL

      1.65 V

      ASYNCHRONOUS

      0.026 mA

      2MX16

      1.35 mm

      16

      0.00001 A

      33554432 bit

      PARALLEL

      FLASH

      1.8 V

      YES

      YES

      YES

      8,63

      4K,32K

      4 words

      TOP

      YES

      12 mm

      7 mm

      N08L6182AB7IT

      Mfr Part No

      N08L6182AB7IT

      		ON Semiconductor Datasheet

      -

      -

      Min: 1

      Mult: 1

      SMD

      YES

      48

      85 ns

      ON SEMICONDUCTOR

      ON Semiconductor

      N08L6182AB7IT

      1

      n/a

      524288 words

      512000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TFBGA

      8 X 10 MM, BGA-48

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, THIN PROFILE, FINE PITCH

      Obsolete

      BGA

      NOT SPECIFIED

      5.88

      Yes

      No

      1.8 V

      -40...+150°C

      LTC

      3A991.B.2.A

      85 °C

      -40 °C

      8542.32.00.41

      SRAMs

      CMOS

      BOTTOM

      BALL

      225

      1

      0.75 mm

      not_compliant

      200kHz

      48

      R-PBGA-B48

      Not Qualified

      -

      Adjustable

      2.2 V

      1.8/2 V

      INDUSTRIAL

      1.65 V

      -

      2.2 V

      1.65 V

      1 MB

      ASYNCHRONOUS

      0.014 mA

      85 ns

      512KX16

      3-STATE

      1.2 mm

      16

      0.00001 A

      8388608 bit

      PARALLEL

      COMMON

      STANDARD SRAM

      1.2 V

      -

      10 mm

      8 mm

      Contains Lead

      IS62WV6416DALL-55BLI

      Mfr Part No

      IS62WV6416DALL-55BLI

      		Integrated Silicon Solution, Inc. (ISSI) Datasheet

      -

      -

      Min: 1

      Mult: 1

      YES

      48

      55 ns

      480

      INTEGRATED SILICON SOLUTION INC

      IS62WV6416DALL-55BLI

      Yes

      3

      65536 words

      64000

      85 °C

      -40 °C

      PLASTIC/EPOXY

      TFBGA

      TFBGA, BGA48,6X8,30

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, THIN PROFILE, FINE PITCH

      Active

      DSBGA

      40

      5.72

      Details

      Yes

      PowerSaver

      IS62WV6416DALL

      e1

      Yes

      EAR99

      TIN SILVER COPPER

      8542.32.00.41

      CMOS

      BOTTOM

      BALL

      260

      1

      0.75 mm

      compliant

      48

      R-PBGA-B48

      Not Qualified

      2.2 V

      1.8/2 V

      INDUSTRIAL

      1.65 V

      ASYNCHRONOUS

      0.007 mA

      64KX16

      3-STATE

      1.2 mm

      16

      0.000004 A

      1048576 bit

      PARALLEL

      COMMON

      STANDARD SRAM

      1.2 V

      8 mm

      6 mm

      CY62167EV18LL-55BVXI

      Mfr Part No

      CY62167EV18LL-55BVXI

      		Infineon Technologies Datasheet

      1840
      In Stock
      • 1: $14.939460
      • 10: $14.093830
      • 100: $13.296066
      • 500: $12.543458
        • View all price

      Min: 1

      Mult: 1

      1 Week

      Surface Mount

      VFBGA-48

      YES

      48-VFBGA (6x8)

      48

      55 ns

      CY62167

      2400

      CYPRESS SEMICONDUCTOR CORP

      Parallel

      CY62167EV18LL-55BVXI

      -

      + 85 C

      Volatile

      Infineon Technologies

      - 40 C

      Yes

      3

      SMD/SMT

      1048576 words

      1000000

      85 °C

      -40 °C

      Tray

      PLASTIC/EPOXY

      VFBGA

      VFBGA, BGA48,6X8,30

      BGA48,6X8,30

      RECTANGULAR

      GRID ARRAY, VERY THIN PROFILE, FINE PITCH

      Active

      BGA

      Active

      30

      1.21

      Details

      Yes

      CYPRESS SEMICONDUCTOR - CY62167EV18LL-55BVXI - SRAM, 16MBIT, 1M X 16BIT, 55NS, VFBGA-48

      2.25 V

      1.65 V

      1.8 V

      MoBL

      0.007873 oz

      -40°C ~ 85°C (TA)

      Tray

      CY62167EV18LL

      e1

      Yes

      3A991.B.2.A

      Asynchronous

      Tin/Silver/Copper (Sn/Ag/Cu)

      8542.32.00.41

      SRAM - Asynchronous

      1.65V ~ 2.25V

      BOTTOM

      BALL

      260

      1

      0.75 mm

      compliant

      48

      R-PBGA-B48

      Not Qualified

      2.25 V

      1.8/2 V

      INDUSTRIAL

      1.65 V

      16 Mbit

      1

      ASYNCHRONOUS

      30 mA

      55 ns

      SRAM

      Parallel

      1 M x 16

      3-STATE

      1 mm

      16

      55ns

      0.00001 A

      16

      PARALLEL

      COMMON

      STANDARD SRAM

      1 V

      1M x 16

      8 mm

      6 mm