The category is 'Memory'
Memory (119)
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- Power Supplies:
1.8/2.5 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Unit Weight | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS8322Z36AB-333IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5 ns | GSI Technology | 333 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AB-333IV | 333 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.26 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AB | 3A991.B.2.B | NBT | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 290 mA, 375 mA | 5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||
![]() | Mfr Part No GS832236AB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 200 MHz | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AB-200V | 200 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | SMD/SMT | 36 Bit | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | 0 to 85 °C | Tray | GS832236AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | SYNCHRONOUS | 215 mA, 250 mA | 6.5@Flow-Through/3@P | 1 M x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 0.03 A | 36 | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No GS880E18CGT-150IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | SDR | 66 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E18CGT-150IV | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS880E18CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 9 Mbit | 2 | SYNCHRONOUS | 125 mA, 135 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 0.045 A | 9437184 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 20 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No GS832218AB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Tray | GS832218AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS832218AB-150IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-150IV | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS832218AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 205 mA, 220 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS832218AD-333V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5 ns | 333 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AD-333V | 333 MHz | 200@Flow-Through/333@Pipelined MHz | 2, 2.7 V | + 70 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 245 mA, 330 mA | 5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832236AD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Bulk | GS832236AD | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 215 mA, 250 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | ||||||||||||||||
![]() | Mfr Part No GS8322Z18AD-333IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5 ns | GSI Technology | 333 MHz | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AD-333IV | 333 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 5.09 | Compliant | No | 2.7 V | 1.7 V | 1.8 V | NBT SRAM | Bulk | GS8322Z18AD | 3A991.B.2.B | NBT | 100 °C | -40 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 265 mA, 350 mA | 5 ns | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 b | SRAM | 36 Mb | 0.04 A | 36 | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8321Z32AD-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321Z32AD-250IV | 250 MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 32 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.16 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Bulk | GS8321Z32AD | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 260 mA, 315 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 b | 36 Mbit | 0.04 A | 33554432 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 15 mm | 13 mm | No | ||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z18AGD-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGD-200V | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Bulk | GS8322Z18AGD | 3A991.B.2.B | NBT | 85 °C | 0 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 195 mA, 230 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||||||
![]() | Mfr Part No GS8322Z18AGB-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGB-250IV | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Bulk | GS8322Z18AGB | 3A991.B.2.B | NBT | 100 °C | -40 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 245 mA, 285 mA | 5.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 22 mm | 14 mm | No | ||||||||||||||||||
![]() | Mfr Part No GS832218AB-150V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-150V | 150 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | Bulk | GS832218AB | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 85 °C | 0 °C | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 185 mA, 200 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 b | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | No | |||||||||||||||||
![]() | Mfr Part No GS8320Z36AGT-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | 100-LQFP | YES | 100-TQFP (20x14) | 100 | 5.5 ns | GS8320Z | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8320Z36AGT-250IV | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | Volatile | GSI Technology Inc. | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Active | NOT SPECIFIED | 4.85 | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | - | 3A991.B.2.B | ALSO OPERATES AT 2.5 | SRAMs | SRAM - Synchronous, ZBT | 1.7V ~ 2V, 2.3V ~ 2.7V | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36Mbit | 4 | SYNCHRONOUS | 250 MHz | 260 mA, 315 mA | 5.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.6 mm | 36 | - | 20 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 1M x 36 | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS88237CB-200V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 2.5 ns | GSI Technology | 200 MHz | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88237CB-200V | 200 MHz | 200 MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.19 | N | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Commercial grade | 0 to 70 °C | Tray | GS88237CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline | Tin/Lead (Sn/Pb) | 70 °C | 0 °C | PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 9 Mbit | 2 | SYNCHRONOUS | 170 mA | Pipelined | 256 k x 36 | 3-STATE | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 0.025 A | 9437184 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | No | |||||||||||||||||
![]() | Mfr Part No GS88237CB-200IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 2.5 ns | GSI Technology | 200 MHz | SDR | 42 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88237CB-200IV | 200 MHz | 200 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.19 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 85 °C | Tray | GS88237CB | e0 | No | 3A991.B.2.B | SCD/DCD Pipeline | Tin/Lead (Sn/Pb) | 85 °C | -40 °C | PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 9 Mbit | 2 | SYNCHRONOUS | 190 mA | Pipelined | 256 k x 36 | 3-STATE | 1.77 mm | 36 | 18 Bit | SRAM | 9 Mbit | 0.045 A | 9437184 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 22 mm | 14 mm | No | ||||||||||||||||
![]() | Mfr Part No GS832218AGD-333IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5 ns | GSI Technology | 333 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AGD-333IV | 333 MHz | 2, 2.7 V | + 85 C | SDR | 1.7, 2.3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.11 | Details | Yes | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | SyncBurst | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Tray | GS832218AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 100 °C | -40 °C | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 2 | SYNCHRONOUS | 265 mA, 350 mA | 5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 b | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 1.7 V | SRAM | 15 mm | 13 mm | No | |||||||||||||||
![]() | Mfr Part No GS8322Z36AD-250IV | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 5.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AD-250IV | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 85 C | 1.7, 2.3 V | - 40 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | 4.74 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Industrial grade | -40 to 100 °C | Bulk | 3A991.B.2.B | 100 °C | -40 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2 V | 1.8/2.5 V | INDUSTRIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 260 mA, 315 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 15 mm | 13 mm | No | |||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z36AB-150V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AB-150V | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2, 2.7 V | + 70 C | SDR | 1.7, 2.3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 4.95 | Compliant | No | FBGA | 2.7 V | 1.7 V | 1.8 V | Synchronous | NBT SRAM | 1.8, 2.5 V | 2.034485 oz | Commercial grade | 0 to 85 °C | Bulk | GS8322Z36AB | 3A991.B.2.B | NBT | 85 °C | 0 °C | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2 V | 1.8/2.5 V | COMMERCIAL | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 200 mA, 210 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | SRAM | 22 mm | 14 mm | No | ||||||||||||||||||||
![]() | Mfr Part No GS8320Z36AGT-250V | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS8320Z36AGT-250V | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2, 2.7 V | + 70 C | 1.7, 2.3 V | 0 C | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 4.85 | Yes | TQFP | 2.7 V | 1.7 V | 1.8 V | Synchronous | 1.8, 2.5 V | Commercial grade | 0 to 85 °C | GS8320Z36AGT | 3A991.B.2.B | ALSO OPERATES AT 2.5 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2 V | 1.8/2.5 V | OTHER | 1.7 V | 36 Mbit | 4 | SYNCHRONOUS | 240 mA, 295 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.6 mm | 36 | 20 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 20 mm | 14 mm |
GS8322Z36AB-333IV
GSI Technology
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GS832236AB-200V
GSI Technology
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GS880E18CGT-150IV
GSI Technology
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GS832218AB-200V
GSI Technology
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GS832218AB-150IV
GSI Technology
Package:Memory
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GS832218AD-333V
GSI Technology
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GS832236AD-200V
GSI Technology
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GS8322Z18AD-333IV
GSI Technology
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GS8321Z32AD-250IV
GSI Technology
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GS8322Z18AGD-200V
GSI Technology
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GS8322Z18AGB-250IV
GSI Technology
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GS832218AB-150V
GSI Technology
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GS8320Z36AGT-250IV
GSI Technology
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GS88237CB-200V
GSI Technology
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GS88237CB-200IV
GSI Technology
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GS832218AGD-333IV
GSI Technology
Package:Memory
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GS8322Z36AD-250IV
GSI Technology
Package:Memory
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GS8322Z36AB-150V
GSI Technology
Package:Memory
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GS8320Z36AGT-250V
GSI Technology
Package:Memory
Price: please inquire
