The category is 'Memory'
Memory (181)
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1.8 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Operating Temperature | Memory Types | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting Styles | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Tradename | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Supply Current-Max | Access Time | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Max Frequency | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Page Size | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width | Radiation Hardening | REACH SVHC | Lead Free |
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![]() | Mfr Part No MT46H32M32LFCM-6:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 5.5 ns | 166 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H32M32LFCM-6:A | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.64 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 32MX32 | 3-STATE | 1 mm | 32 | 0.0006 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H64M16HR-25:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M16HR-25:E | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.36 | Yes | 1.8 V | e1 | TIN SILVER COPPER | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H64M8B6-25E:D | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M8B6-25E:D | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | SQUARE | GRID ARRAY | Obsolete | BGA | 30 | 5.59 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 60 | S-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.3 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 10 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46H32M32LFCM-75IT:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 90 | 6 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H32M32LFCM-75IT:A | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.37 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.14 mA | 32MX32 | 3-STATE | 1 mm | 32 | 0.0006 A | 1 | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W949D6CBHX6E | Winbond Electronics Corporation | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 5 ns | 166 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W949D6CBHX6E | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | NOT SPECIFIED | 5.37 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.075 mA | 32MX16 | 3-STATE | 1.025 mm | 16 | 0.00001 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8,16 | 2,4,8,16 | FOUR BANK PAGE BURST | YES | 9 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H128M4BT-37E:A | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 92 | 0.5 ns | 267 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H128M4BT-37E:A | 134217728 words | 128000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA92,9X21,32 | BGA92,9X21,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.62 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 92 | R-PBGA-B92 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 128MX4 | 3-STATE | 1.2 mm | 4 | 0.005 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 19 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No IS43DR16320B-3DBL | ISSI | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | Surface Mount | YES | 84 | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | Integrated Silicon Solution Inc | IS43DR16320B-3DBL | DDR2 SDRAM, RAM | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | DSBGA | 40 | 5.59 | Compliant | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 333 MHz | 84 | R-PBGA-B84 | Not Qualified | 1.8 V | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | Parallel | 1.9 V | 1.7 V | 64 MB | 1 | 280 mA | SYNCHRONOUS | 340 mA | 0.34 mA | 450 ps | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | 15 b | 512 Mb | 0.008 A | 512 | 667 MHz | COMMON | DDR DRAM | 512 MB | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10.5 mm | No | No SVHC | ||||||||||||||||||||
![]() | Mfr Part No HYS64T128021HDL-3S-B | Qimonda | Datasheet | - | - | Min: 1 Mult: 1 | NO | 200 | 0.45 ns | 333 MHz | QIMONDA AG | Qimonda AG | HYS64T128021HDL-3S-B | 134217728 words | 128000000 | 65 °C | UNSPECIFIED | DIMM | DIMM, DIMM200,24 | DIMM200,24 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | Obsolete | MODULE | NOT SPECIFIED | 5.71 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | DRAMs | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.6 mm | unknown | 200 | R-XDMA-N200 | Not Qualified | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 1.34 mA | 128MX64 | 3-STATE | 64 | 0.11 A | 8589934592 bit | COMMON | DDR DRAM MODULE | 8192 | DUAL BANK PAGE BURST | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No H5PS1G63JFR-S5C | Hynix | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | SK HYNIX INC | SK Hynix Inc | H5PS1G63JFR-S5C | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.44 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.28 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 7.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W9725G6JB-25 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9725G6JB-25 | 16777216 words | 16000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 7.99 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.135 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.006 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS82582Q20GE-500 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 12 Weeks | BGA-165 | YES | 165 | 0.45 ns | 500 MHz | 10 | GSI TECHNOLOGY | Parallel | GS82582Q20GE-500 | 500 MHz | + 70 C | QDR-II | 0 C | Yes | SMD/SMT | 16777216 words | 16000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | NOT SPECIFIED | 5.73 | Details | Yes | 1.9 V | 1.7 V | 1.8 V | SigmaQuad-II+ | Tray | GS82582Q20GE | 3A991.B.2.B | SigmaQuad-II+ B2 | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | R-PBGA-B165 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 288 Mbit | SYNCHRONOUS | 1.41 A | 16 M x 18 | 3-STATE | 1.5 mm | 18 | 301989888 bit | PARALLEL | SEPARATE | STANDARD SRAM | 1.7 V | 17 mm | 15 mm | |||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H64M4BP-5E:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.6 ns | 200 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H64M4BP-5E:B | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.82 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 64MX4 | 3-STATE | 1.2 mm | 4 | 0.005 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT48H16M32LFCM-75IT:B | Micron | Datasheet | - | - | Min: 1 Mult: 1 | Surface Mount | YES | 90 | 90 | 5.4 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT48H16M32LFCM-75IT:B | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 5.46 | Compliant | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 90 | R-PBGA-B90 | Not Qualified | 1.8 V | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.95 V | 1.7 V | 1 | 95 mA | SYNCHRONOUS | 0.095 mA | 32 b | 16MX32 | 3-STATE | 1 mm | 32 | 15 b | 512 Mb | 0.00001 A | 536870912 bit | 133 MHz | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 10 mm | No | Lead Free | ||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H16M16BG-3E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.45 ns | 333 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H16M16BG-3E | 16777216 words | 16000000 | PLASTIC/EPOXY | FBGA | FBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | 5.83 | Yes | 1.8 V | DRAMs | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B84 | Not Qualified | 1.8 V | 0.18 mA | 16MX16 | 3-STATE | 16 | 0.005 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT46H32M16LFCK-75LIT | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 6 ns | 133 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT46H32M16LFCK-75LIT | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 | BGA60,9X10,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | 30 | 5.12 | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.1 mA | 32MX16 | 3-STATE | 1 mm | 16 | 0.00001 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | YES | 11.5 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No HYB18T512160BF-3.7 | Qimonda | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.5 ns | 266 MHz | QIMONDA AG | Qimonda AG | HYB18T512160BF-3.7 | 3 | 33554432 words | 32000000 | 95 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 40 | 5.68 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.23 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W971GG6JB-25 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W971GG6JB-25 | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 8.15 | Yes | 1.8 V | Yes | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.225 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No MT47H128M8HQ-25E:E | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 60 | 0.4 ns | 400 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | MT47H128M8HQ-25E:E | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | 30 | 8.18 | Yes | 1.8 V | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.335 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 11.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W971GG6JB-25I | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.4 ns | 400 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W971GG6JB-25I | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | NOT SPECIFIED | 5.62 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.225 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 12.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W9751G6JB-3 | Winbond | Datasheet | - | - | Min: 1 Mult: 1 | YES | 84 | 0.45 ns | 333 MHz | WINBOND ELECTRONICS CORP | Winbond Electronics Corp | W9751G6JB-3 | 33554432 words | 32000000 | 85 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.45 | Yes | 1.8 V | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.18 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | 12.5 mm | 8 mm |
MT46H32M32LFCM-6:A
Micron
Package:Memory
Price: please inquire
MT47H64M16HR-25:E
Micron
Package:Memory
Price: please inquire
MT47H64M8B6-25E:D
Micron
Package:Memory
Price: please inquire
MT46H32M32LFCM-75IT:A
Micron
Package:Memory
Price: please inquire
W949D6CBHX6E
Winbond Electronics Corporation
Package:Memory
Price: please inquire
MT47H128M4BT-37E:A
Micron
Package:Memory
Price: please inquire
IS43DR16320B-3DBL
ISSI
Package:Memory
Price: please inquire
HYS64T128021HDL-3S-B
Qimonda
Package:Memory
Price: please inquire
H5PS1G63JFR-S5C
Hynix
Package:Memory
Price: please inquire
W9725G6JB-25
Winbond
Package:Memory
Price: please inquire
GS82582Q20GE-500
GSI Technology
Package:Memory
Price: please inquire
MT47H64M4BP-5E:B
Micron
Package:Memory
Price: please inquire
MT48H16M32LFCM-75IT:B
Micron
Package:Memory
Price: please inquire
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