The category is 'Memory'
Memory (384)
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- Power Supplies:
2.5/3.3 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Package / Case | Surface Mount | Number of Terminals | Access Time-Max | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Supply Current-Max | Access Time | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Length | Width |
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![]() | Mfr Part No GS8644Z36E-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 7 ns | GSI Technology | 166 MHz | 15 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8644Z36E-166I | 166 MHz | 142.8@Flow-Through/166@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | SMD/SMT | 36 Bit | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.14 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | 2.5, 3.3 V | -40 to 85 °C | Tray | GS8644Z36E | No | 3A991.B.2.B | NBT | ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 72 Mbit | SYNCHRONOUS | 285 mA, 345 mA | 7@Flow-Through/3.5@P | 2 M x 36 | 3-STATE | 1.5 mm | 36 | SRAM | 0.16 A | 72 | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 17 mm | 15 mm | |||||||||||||
![]() | Mfr Part No GS88018CGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88018CGT-150I | 150 MHz | + 85 C | SDR | - 40 C | Yes | 3 | SMD/SMT | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.3 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS88018CGT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 150 mA | 7.5 ns | 512 k x 18 | 3-STATE | 1.6 mm | 18 | SRAM | 0.045 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No GS842Z36CGB-100I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | SDR | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z36CGB-100I | 100 MHz | 83.3@Flow-Through/100@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 128 kWords | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.35 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS842Z36CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 4 Mbit | 4 | SYNCHRONOUS | 130 mA, 140 mA | 12 ns | Flow-Through/Pipelined | 128 k x 36 | 3-STATE | 1.99 mm | 36 | 17 Bit | SRAM | 4 Mbit | 0.045 A | 4718592 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||
![]() | Mfr Part No GS842Z18CB-100I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CB-100I | 100 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.36 | No | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 130 mA | 12 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.045 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||||
![]() | Mfr Part No GS880F18CGT-6.5I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | 153 MHz | SDR | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880F18CGT-6.5I | 153.8 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.36 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS880F18CGT | e3 | Yes | 3A991.B.2.B | Flow Through | PURE MATTE TIN | FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | 2 | SYNCHRONOUS | 150 mA | 6.5 ns | Flow-Through | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 18 Bit | SRAM | 9 Mbit | 0.045 A | 9437184 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||
![]() | Mfr Part No GS8321E36AGD-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 7.5 ns | GSI Technology | 150 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8321E36AGD-150 | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.31 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8321E36AGD | e1 | Yes | 3A991.B.2.B | DCD Pipeline/Flow Through | TIN SILVER COPPER | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 190 mA, 200 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | |||
![]() | Mfr Part No GS8322Z36AD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 3 Weeks | BGA-165 | YES | 165 | 5.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z36AD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.12 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS8322Z36AD | e0 | No | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 mA, 305 mA | 5.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 15 mm | 13 mm | |||
![]() | Mfr Part No GS832236AGB-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-150I | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832236AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 210 mA, 220 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |
![]() | Mfr Part No GS832272GC-200 | GSI Technology | Datasheet | 49 | - | Min: 1 Mult: 1 | 8 Weeks | BGA-209 | YES | 209 | 7.5 ns | GSI Technology | 200 MHz | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832272GC-200 | 200 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | SMD/SMT | 72 Bit | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 1.45 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS832272GC | e1 | Yes | 3A991.B.2.B | SCD/DCD Pipeline/Flow Through | TIN SILVER COPPER | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | SYNCHRONOUS | 235 mA, 320 mA | 7.5@Flow-Through/3@P | 512 k x 72 | 3-STATE | 1.7 mm | 72 | SRAM | 0.06 A | 36 | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.38 V | SRAM | 22 mm | 14 mm | ||||||||||
![]() | Mfr Part No GS816018BGT-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816018BGT-150 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.39 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.185 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 0.04 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832218AB-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4.5 ns | 333 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-333 | 333 MHz | 222@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | GS832218AB | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 0.3 mA | 4.5 ns | Flow-Through/Pipelined | 2MX18 | 3-STATE | 1.99 mm | 18 | 21 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 22 mm | 14 mm | |||||||||||||
![]() | Mfr Part No GS832218AB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | 150 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-150 | 150 MHz | 133@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 175 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 22 mm | 14 mm | ||||||||||||||
![]() | Mfr Part No GS88018CGT-300I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 5 ns | GSI Technology | 300 MHz | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88018CGT-300I | 300 MHz | 200@Flow-Through/300@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 512 kWords | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.3 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS88018CGT | e3 | Yes | 3A991.B.2.B | Pipeline/Flow Through | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | 2 | SYNCHRONOUS | 170 mA, 225 mA | 5 ns | Flow-Through/Pipelined | 512 k x 18 | 3-STATE | 1.6 mm | 18 | 19 Bit | SRAM | 9 Mbit | 0.045 A | 9437184 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | |
![]() | Mfr Part No GS880E36CGT-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E36CGT-200 | 200 MHz | + 70 C | SDR | 0 C | Yes | 3 | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.61 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS880E36CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 170 mA | 6.5 ns | 256 k x 36 | 3-STATE | 1.6 mm | 36 | SRAM | 0.025 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | |||||||||||||||||||
![]() | Mfr Part No GS832218AB-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 5.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AB-250 | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 70 C | 2.3, 3 V | 0 C | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 215 mA, 255 mA | 5.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 22 mm | 14 mm | ||||||||||||||
![]() | Mfr Part No GS880E18CGT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 7.5 ns | GSI Technology | 150 MHz | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880E18CGT-150I | 150 MHz | + 85 C | SDR | - 40 C | Yes | 3 | SMD/SMT | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.6 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS880E18CGT | e3 | Yes | 3A991.B.2.B | DCD | PURE MATTE TIN | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA, 150 mA | 7.5 ns | 512 k x 18 | 3-STATE | 1.6 mm | 18 | SRAM | 0.045 A | 9437184 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | |||||||||||||||||
![]() | Mfr Part No GS832236AGB-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 6.5 ns | GSI Technology | 200 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832236AGB-200 | 200 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.12 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS832236AGB | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 205 mA, 240 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||
![]() | Mfr Part No GS842Z18CGB-100I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CGB-100I | 100 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.36 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 130 mA, 130 mA | 12 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.045 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||||
![]() | Mfr Part No GS832218AD-200I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 6.5 ns | GSI Technology | 200 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AD-200I | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.11 | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832218AD | e0 | No | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 205 mA, 240 mA | 6.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm | |||
![]() | Mfr Part No GS8322Z18AGB-333 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 4.5 ns | GSI Technology | 333 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGB-333 | 333 MHz | 222.2@Flow-Through/333@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8322Z18AGB | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 235 mA, 320 mA | 4.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm |
GS8644Z36E-166I
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GS88018CGT-150I
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GS842Z36CGB-100I
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GS842Z18CB-100I
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GSI Technology
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GS8322Z36AD-250I
GSI Technology
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GS832236AGB-150I
GSI Technology
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GSI Technology
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GSI Technology
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GS832218AB-333
GSI Technology
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GS832218AB-150
GSI Technology
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GS88018CGT-300I
GSI Technology
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GS880E36CGT-200
GSI Technology
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GS832218AB-250
GSI Technology
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GS880E18CGT-150I
GSI Technology
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GS832236AGB-200
GSI Technology
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GS842Z18CGB-100I
GSI Technology
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GS832218AD-200I
GSI Technology
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GS8322Z18AGB-333
GSI Technology
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