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2.5/3.3 V

Part Number	Manufacturer	Datasheet	Availability	Pricing(USD)	Quantity	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width	Radiation Hardening
Mfr Part No GS8322Z18AB-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	7.5 ns		150 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C			Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C			e0	No	3A991.B.2.B		Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V		22 mm	14 mm
Mfr Part No GS832236AB-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	4.5 ns	GSI Technology	333 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-333	333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.12	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	260 mA, 345 mA	4.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	22 mm	14 mm
Mfr Part No GS8322Z18AB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8322Z18AB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
Mfr Part No GS832132AGD-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	250 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832132AGD-250I	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832132AGD			3A991.B.2.B	Pipeline/Flow Through				PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	250 mA, 305 mA	5.5 ns	Flow-Through/Pipelined	1 M x 32	3-STATE	1.4 mm	32	20 Bit	SRAM	36 Mbit	0.04 A	33554432 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8322Z36AD-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	5.5 ns	GSI Technology	250 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AD-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.12	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z36AD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS832136AGD-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832136AGD-150I	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.16	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832136AGD			3A991.B.2.B	Pipeline/Flow Through				PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	210 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8322Z18AD-150I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AD-150I	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8322Z18AD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8321E32AGD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E32AGD-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31	Details	Yes	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E32AGD	e1	Yes	3A991.B.2.B	DCD Pipeline/Flow Through	TIN SILVER COPPER			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 32	3-STATE	1.4 mm	32	20 Bit	SRAM	36 Mbit	0.03 A	33554432 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8322Z18AB-333	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	4.5 ns	GSI Technology	333 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AB-333	333 MHz	222.2@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	235 mA, 320 mA	4.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
Mfr Part No GS8320E18AGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	5.5 ns	GSI Technology	250 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8320E18AGT-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39	Compliant	Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Bulk	GS8320E18AGT			3A991.B.2.B	Pipeline/Flow Through		85 °C	0 °C	ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	2.5/3.3 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.6 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm	No
Mfr Part No GS8320E36AGT-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	6.5 ns		200 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8320E36AGT-200I	200 MHz		2, 2.7 V	+ 85 C		1.7, 2.3 V	- 40 C			Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.39		Yes	TQFP	3.6 V	2.3 V	1.8 V	Synchronous		1.8, 2.5 V	Industrial grade	-40 to 100 °C		GS8320E36AGT			3A991.B.2.B					ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	2.5/3.3 V	INDUSTRIAL	1.7 V	36 Mbit	4	SYNCHRONOUS	0.235 mA	6.5 ns	Flow-Through/Pipelined	1MX36	3-STATE	1.6 mm	36			36 Mbit	0.03 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V		20 mm	14 mm
Mfr Part No GS832236AD-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	7.5 ns	GSI Technology	150 MHz	SDR	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AD-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.12	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS832236AD	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8322Z18AD-200	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z18AD-200	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes		Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C		PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.13	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AD	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS8320Z36AGT-250	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	13 Weeks	TQFP-100	YES	100	5.5 ns		250 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8320Z36AGT-250	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C		2.3, 3 V	0 C			Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.31		Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Commercial grade	0 to 85 °C					3A991.B.2.B					IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		SRAMs	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	OTHER	2.3 V	36 Mbit	4	SYNCHRONOUS	230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.6 mm	36	20 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V		20 mm	14 mm
Mfr Part No GS880E18CGT-150	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	TQFP-100	YES	100	7.5 ns	GSI Technology	150 MHz	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880E18CGT-150	150 MHz	133.3@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	70 °C		PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.6	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 70 °C	Tray	GS880E18CGT	e3	Yes	3A991.B.2.B	DCD	PURE MATTE TIN			PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	120 mA, 130 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	18 Bit	SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS8322Z36AB-250I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	5.5 ns	GSI Technology	250 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS8322Z36AB-250I	250 MHz		2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8322Z36AB	e0	No	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	250 mA, 305 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36		SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
Mfr Part No GS8321E32AD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns		200 MHz	SDR		GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E32AD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C		2.3, 3 V	- 40 C			Surface Mount	SMD/SMT	32 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous		2.5, 3.3 V	Industrial grade	-40 to 100 °C		GS8321E32AD	e0	No	3A991.B.2.B		TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	225 mA, 260 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32	3-STATE	1.4 mm	32	20 Bit		36 Mbit	0.04 A	33554432 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V		15 mm	13 mm
Mfr Part No GS8321E18AD-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	200 MHz		18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8321E18AD-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes			SMD/SMT	18 Bit	2097152 words	2000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.31		No		3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V		-40 to 100 °C	Tray	GS8321E18AD	e0	No	3A991.B.2.B	DCD Pipeline/Flow Through	TIN LEAD			IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit		SYNCHRONOUS	205 mA, 240 mA	6.5@Flow-Through/3@P		2 M x 18	3-STATE	1.4 mm	18		SRAM		0.04 A	36		PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	15 mm	13 mm
Mfr Part No GS880F36CGT-7.5I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	14 Weeks, 2 Days	TQFP-100	YES	100	7.5 ns	GSI Technology	133 MHz	SDR	72	GSI TECHNOLOGY	Parallel	GSI Technology	GS880F36CGT-7.5I		133.3 MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.35	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS880F36CGT	e3	Yes	3A991.B.2.B	Flow Through	PURE MATTE TIN			FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	4	SYNCHRONOUS	150 mA	7.5 ns	Flow-Through	256 k x 36	3-STATE	1.6 mm	36	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
Mfr Part No GS832236AB-200I	GSI Technology	Datasheet	-	-	Min: 1 Mult: 1	8 Weeks	BGA-119	YES	119	6.5 ns	GSI Technology	200 MHz	SDR	14	GSI TECHNOLOGY	Parallel	GSI Technology	GS832236AB-200I	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes		Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.12		No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS832236AB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)			ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	36 Mbit	4	SYNCHRONOUS	225 mA, 260 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.99 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	22 mm	14 mm

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