Memory (384)

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7 ns

GSI Technology

166 MHz

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36E-166

166 MHz

142.8@Flow-Through/166@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.15

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8644Z36E

No

3A991.B.2.B

NBT

70 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

260 mA, 310 mA

8 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4 ns

GSI Technology

400 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGB-400I

400 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832236AGB

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

305 mA, 415 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AD-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8322Z18AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832118AGD-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.16

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832118AGD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

18874368 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

225 MHz

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z18E-225I

225 MHz

153.8@Flow-Through/225@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

SMD/SMT

18 Bit

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.14

Compliant

No

3.6 V

2.3 V

2.5 V

NBT SRAM

2.5, 3.3 V

-40 to 85 °C

Tray

GS8644Z18E

No

3A991.B.2.B

NBT

85 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

2

SYNCHRONOUS

275 mA, 370 mA

6.5@Flow-Through/2.7

4 M x 18

3-STATE

1.5 mm

18

22 b

SRAM

72 Mb

0.16 A

72

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-209

YES

209

6.5 ns

GSI Technology

250 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832272GC-250

250 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

72 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS832272GC

e1

Yes

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

TIN SILVER COPPER

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

8

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.06 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.38 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.2 ns

GSI Technology

375 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AB-375

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Bulk

GS8322Z36AB

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

8 ns

GSI Technology

167 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36B-167I

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.18

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z36B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

240 mA, 290 mA

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

5.5 ns

GS8642Z

GSI Technology

300 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36GB-300I

300 MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

5.16

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

2M x 36

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

1.58

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88032CGT-150

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

32 Bit

256 kWords

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

4.9

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88032CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

3-STATE

1.6 mm

32

18 Bit

SRAM

9 Mbit

0.025 A

8388608 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

YES

100

7.5 ns

GSI TECHNOLOGY

GSI Technology

GS88032CGT-150I

3

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.37

Compliant

Yes

2.5 V

e3

Yes

3A991.B.2.B

PURE MATTE TIN

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

4

SYNCHRONOUS

0.16 mA

256KX32

3-STATE

1.6 mm

32

18 b

9 Mb

0.045 A

8388608 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

7 Weeks

BGA-119

YES

119

7.5 ns

150 MHz

GSI TECHNOLOGY

Parallel

GSI Technology

GS842Z18CGB-150

150 MHz

+ 70 C

0 C

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

4.89

Yes

3.6 V

2.3 V

2.5 V

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

4 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

256 k x 18

3-STATE

1.99 mm

18

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

8 ns

GSI Technology

167 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z18B-167I

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.17

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z18B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.99 mm

18

22 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8320Z36AGT-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

1.73

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8320Z36AGT

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

4.5 ns

GS8322Z

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AGB-333I

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

5.11

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8322Z36AGB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

1M x 36

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

1.59

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.203046 oz

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AB-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

1.62

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.130773 oz

Industrial grade

-40 to 100 °C

Bulk

GS8322Z36AB

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

4.77

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

0.594778 oz

Industrial grade

-40 to 100 °C

Tray

GS8322Z18AD

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

153 MHz

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880F36CGT-6.5I

-

+ 85 C

SDR

- 40 C

Yes

3

SMD/SMT

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

4.9

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS880F36CGT

e3

Yes

3A991.B.2.B

Flow Through

PURE MATTE TIN

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

160 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.045 A

9437184 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm