Memory (384)

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E36CGT-200

200 MHz

+ 70 C

SDR

0 C

Yes

3

SMD/SMT

262144 words

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.61

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS880E36CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

9437184 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832136AD-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

5.16

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832136AD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

5.5 ns

GSI Technology

250 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGD-250

250 MHz

181.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832236AGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

6.5 ns

200 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AGB-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

2.3, 3 V

0 C

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.13

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

e1

Yes

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.5 ns

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGB-333

333 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832236AGB

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

7.5 ns

GSI Technology

150 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AB-150I

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832236AB

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

7 Weeks

TQFP-100

YES

100

12 ns

GSI Technology

100 MHz

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS841Z36CGT-100

100 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

131072 words

128000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.39

Details

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS841Z36CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

NOT SPECIFIED

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

4 Mbit

SYNCHRONOUS

110 mA, 120 mA

12 ns

128 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

GSI Technology

333 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AGD-333

333 MHz

222.2@Flow-Through/333@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.13

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS8322Z18AGD

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

5 ns

GSI Technology

300 MHz

SDR

36

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-300

300 MHz

200@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.3

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88018CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

19 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-209

YES

209

8.5 ns

GSI Technology

133 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS832272GC-133I

133 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

72 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS832272GC

e1

Yes

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

TIN SILVER COPPER

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

8

SYNCHRONOUS

220 mA, 255 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

SRAM

36 Mbit

0.08 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.38 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

12 Weeks

BGA-209

YES

209

7.5 ns

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z72C-200I

200 MHz

133.3@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

72 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

4.79

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z72C

No

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

8

SYNCHRONOUS

295 mA, 405 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

5.5 ns

GSI Technology

300 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36B-300I

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.18

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8642Z36B

e0

No

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

320 mA, 440 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-209

YES

209

8 ns

GSI Technology

167 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z72C-167

167 MHz

125@Flow-Through/167@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

72 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.17

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8642Z72C

No

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

8

SYNCHRONOUS

270 mA, 340 mA

8 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.1 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AD-375

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832218AD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

250 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

YES

119

4.2 ns

375 MHz

SDR

GSI TECHNOLOGY

GSI Technology

GS832218AB-375

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

2.3, 3 V

Surface Mount

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.11

No

FBGA

2.5 V

Synchronous

2.5, 3.3 V

Commercial grade

0 to 85 °C

e0

No

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

2

SYNCHRONOUS

0.3 mA

Flow-Through/Pipelined

2MX18

3-STATE

1.99 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7 ns

GSI Technology

166 MHz

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z18E-166

166 MHz

142.8@Flow-Through/166@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

4 MWords

4000000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.14

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8644Z18E

No

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

3-STATE

1.5 mm

18

22 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4 ns

GSI Technology

400 MHz

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AD-400I

400 MHz

+ 85 C

SDR

- 40 C

Yes

SMD/SMT

2097152 words

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

No

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS832218AD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

SYNCHRONOUS

285 mA, 375 mA

4 ns

2 M x 18

3-STATE

1.4 mm

18

SRAM

0.04 A

36

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS8321E18AD-375I

375 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.31

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8321E18AD

e0

No

3A991.B.2.B

DCD Pipeline/Flow Through

TIN LEAD

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4 ns

GSI Technology

400 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AGD-400

400 MHz

250@Flow-Through/400@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832218AGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

265 mA, 355 mA

4 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.2 ns

375 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGB-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.12

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

e1

Yes

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

22 mm

14 mm