The category is 'Memory'
Memory (384)
- All Manufacturers
- Ihs Manufacturer
- JESD-30 Code
- Manufacturer Part Number
- Memory Density
- Memory IC Type
- Memory Width
- Number of Terminals
- Number of Words
- Number of Words Code
- Operating Temperature-Max
- Package Body Material
- Power Supplies
- Power Supplies:
2.5/3.3 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Data Rate Architecture | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Product Category | Memory Organization | Length | Width | Radiation Hardening |
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 | Mfr Part No GS816032BT-150I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 7.5 ns | 150 MHz | GSI TECHNOLOGY | GSI Technology | GS816032BT-150I | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.74 | Non-Compliant | No | 2.5 V | No | 3A991.B.2.B | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.215 mA | 512KX32 | 3-STATE | 1.6 mm | 32 | 16777216 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS8320Z36AGT-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | 100-LQFP | YES | 100-TQFP (20x14) | 100 | 5.5 ns | GS8320Z | 250 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS8320Z36AGT-250I | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | Volatile | GSI Technology Inc. | 2.3, 3 V | Surface Mount | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Active | NOT SPECIFIED | 4.85 | Compliant | Yes | TQFP | 2.5 V | Synchronous | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Bulk | - | 3A991.B.2.B | 100 °C | -40 °C | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | SRAMs | SRAM - Synchronous, ZBT | 2.3V ~ 2.7V, 3V ~ 3.6V | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36Mbit | 4 | SYNCHRONOUS | 250 MHz | 0.27 mA | SRAM | Parallel | Flow-Through/Pipelined | 1MX36 | 3-STATE | 1.6 mm | 36 | - | 20 Bit | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 1M x 36 | 20 mm | 14 mm | No | |||||||||||||||||||||
| Mfr Part No GS842Z36CB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z36CB-150 | 150 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.35 | No | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z36CB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 130 mA, 140 mA | 7.5 ns | 128 k x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 0.025 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||
| Mfr Part No GS832218AGD-333I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-165 | YES | 165 | 4.5 ns | GSI Technology | 333 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832218AGD-333I | 333 MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.11 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832218AGD | e1 | Yes | 3A991.B.2.B | Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 255 mA, 340 mA | 4.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.4 mm | 18 | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 15 mm | 13 mm |