Memory (384)

-

-

Min: 1

Mult: 1

YES

8

75 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

M25P40-VMB6TPB

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

HVSON

HVSON, SOLCC8,.11,20

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Obsolete

30

8.49

Yes

3 V

e4

Yes

NOR TYPE

Nickel/Palladium/Gold (Ni/Pd/Au)

SUBGROUP FLASH3V

Flash Memories

CMOS

DUAL

NO LEAD

260

1

0.5 mm

compliant

R-PDSO-N8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.7 V

SYNCHRONOUS

0.015 mA

512KX8

0.6 mm

8

0.00001 A

4194304 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

3 mm

2 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

2.3 ns

250 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS88037CGT-250I

250 MHz

250 MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.24

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 85 °C

GS88037CGT

e3

Yes

3A991.B.2.B

PURE MATTE TIN

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

1

SYNCHRONOUS

215 mA

2.3 ns

Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-209

YES

209

5.5 ns

GSI Technology

300 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z72GC-300

300 MHz

181.8@Flow-Through/300@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

72 Bit

1 MWords

1000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

4.65

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS8642Z72GC

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

72 Mbit

8

SYNCHRONOUS

375 mA, 520 mA

5.5 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.1 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

150 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS832132AD-150I

150 MHz

133.3@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

4.79

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

3A991.B.2.B

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

15 mm

13 mm

-

-

Min: 1

Mult: 1

YES

100

7.5 ns

150 MHz

GSI TECHNOLOGY

GSI Technology

GS816032BGT-150I

3

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

NOT SPECIFIED

5.69

Yes

2.5 V

e3

Yes

3A991.B.2.B

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.215 mA

512KX32

3-STATE

1.6 mm

32

16777216 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

-

-

Min: 1

Mult: 1

YES

8

50 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

M25P40-VMN6TPBA

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

30

5.7

Yes

Yes

NOR TYPE

Flash Memories

CMOS

DUAL

GULL WING

260

1.27 mm

compliant

R-PDSO-G8

Not Qualified

2.5/3.3 V

INDUSTRIAL

0.015 mA

512KX8

8

0.00001 A

4194304 bit

SERIAL

FLASH

3 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

-

-

Min: 1

Mult: 1

YES

165

6.5 ns

250 MHz

GSI TECHNOLOGY

GSI Technology

GS8321Z36E-250

3

1048576 words

1000000

70 °C

PLASTIC/EPOXY

LBGA

15 X 17 MM, 1 MM PITCH, FPBGA-165

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Obsolete

BGA

NOT SPECIFIED

5.68

No

2.5 V

No

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

SYNCHRONOUS

0.3 mA

1MX36

3-STATE

1.5 mm

36

0.06 A

37748736 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

17 mm

15 mm

-

-

Min: 1

Mult: 1

8 Weeks

YES

209

7.5 ns

200 MHz

GSI TECHNOLOGY

GSI Technology

GS8642Z72GC-200I

3

1048576 words

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.18

Yes

2.5 V

e1

Yes

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.405 mA

1MX72

3-STATE

1.7 mm

72

0.12 A

75497472 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

22 mm

14 mm

40
In Stock

• 1: $0.439564
• 10: $0.414683
• 100: $0.391210
• 500: $0.369066
View all price

Min: 1

Mult: 1

Surface Mount

YES

8

NOR

104 MHz

3.1 x 2.1 x 0.55mm

WINBOND ELECTRONICS CORP

SPI

Winbond Electronics Corp

W25X10CLUXIG

3.6 V

+85 °C

2.3 V

-40 °C

128K

1000000

85 °C

-40 °C

USON - 8

PLASTIC/EPOXY

HVSON

USON-8

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

USON

Active

SON

NOT SPECIFIED

5.76

Yes

3 V

W25X

EAR99

NOR TYPE

IT ALSO OPERATES AT 2.3 V AT 80 MHZ

8542.32.00.51

Flash Memories

CMOS

DUAL

NO LEAD

NOT SPECIFIED

1

0.5 mm

compliant

80/104MHz

8

R-PDSO-N8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.7 V

2.3 ~ 3.6V

1Mbit

SYNCHRONOUS

0.015 mA

1MX1

0.6 mm

1

1Mb

0.000005 A

1048576 bit

SERIAL

FLASH

3 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

-40~+85˚C

0.55mm

2.1mm

3.1mm

14
In Stock

-

Min: 1

Mult: 1

YES

100

6.5 ns

200 MHz

GSI TECHNOLOGY

GSI Technology

GS816036BGT-200

3

524288 words

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Obsolete

QFP

NOT SPECIFIED

8.45

Compliant

Yes

2.5 V

e3

Yes

3A991.B.2.B

PURE MATTE TIN

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

4

SYNCHRONOUS

0.255 mA

512KX36

3-STATE

1.6 mm

36

19 b

18 Mb

0.04 A

18874368 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

YES

8

50 MHz

STMICROELECTRONICS

STMicroelectronics

M25P40-VMN6TP

1

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

0.150 INCH, ROHS COMPLIANT, SOP-8

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Transferred

SOIC

40

5.45

Yes

3 V

e4

Yes

EAR99

NOR TYPE

Nickel/Palladium/Gold (Ni/Pd/Au)

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

260

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.7 V

SYNCHRONOUS

0.015 mA

512KX8

1.75 mm

8

0.00001 A

4194304 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

4.9 mm

3.9 mm

-

-

Min: 1

Mult: 1

YES

8

75 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

M25PX16-VMW6TG

2097152 words

2000000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.3

SOP8,.3

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

NOT SPECIFIED

5.72

Yes

NOR Flash

2.7 V

Yes

3A991.B.1.B.1

NOR TYPE

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.015 mA

2MX8

2.5 mm

8

0.00001 A

16777216 bit

SERIAL

FLASH

3 V

SPI

100000 Write/Erase Cycles

15 ms

20

HARDWARE/SOFTWARE

5.62 mm

-

-

Min: 1

Mult: 1

YES

8

50 MHz

WINBOND ELECTRONICS CORP

Winbond Electronics Corp

W25X40BLSNIG

4194304 words

4000000

85 °C

-40 °C

PLASTIC/EPOXY

SOP

0.150 INCH, GREEN, SOIC-8

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Obsolete

SOIC

5.59

Yes

2.5 V

EAR99

NOR TYPE

ORGANIZED AS 2048 PAGES OF 256 BYTES, ALSO OPERATES WITH 2.3-3.6V SUPPLY AT 50 MHZ

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

1

1.27 mm

unknown

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.025 mA

4MX1

1.75 mm

1

0.000005 A

4194304 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

4.9 mm

3.9 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88036CGT-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

256 kWords

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

1.67

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88036CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

4

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

12 Weeks

Surface Mount

mBGA-48

YES

48-TFBGA (6x8)

48

10 ns

480

INTEGRATED SILICON SOLUTION INC

Parallel

IS64WV6416EEBLL-10BLA3

+ 125 C

SRAM

ISSI, Integrated Silicon Solution Inc

- 40 C

SMD/SMT

65536 words

64000

125 °C

-40 °C

Tray

PLASTIC/EPOXY

TFBGA

TFBGA, BGA48,6X8,30

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Active

Active

5.75

Details

Yes

3.6 V

2.4 V

3 V

Automotive grade

-40°C ~ 125°C (TA)

Tray

IS64WV6416EEBLL

Asynchronous

SRAM - Asynchronous

2.4V ~ 3.6V

BOTTOM

BALL

1

0.75 mm

compliant

R-PBGA-B48

Not Qualified

3.6 V

2.5/3.3 V

AUTOMOTIVE

2.4 V

1 Mbit

ASYNCHRONOUS

35 mA

10 ns

SRAM

Parallel

64 k x 16

3-STATE

1.2 mm

16

10ns

0.01 A

1048576 bit

AEC-Q100

PARALLEL

COMMON

STANDARD SRAM

2 V

64K x 16

8 mm

6 mm

-

-

Min: 1

Mult: 1

1 Week

Surface Mount

48-VFBGA

YES

48-VFBGA (8x9.5)

48

55 ns

CY62167

Infineon Technologies

1050

CYPRESS SEMICONDUCTOR CORP

Parallel

Infineon

CY62167DV30LL-55BVXI

-

3.6 V

+ 85 C

Volatile

Infineon Technologies

2.2 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

16 Bit

1 MWords

1000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

VFBGA

VFBGA, BGA48,6X8,30

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Active

BGA

Active

30

1.96

Details

Yes

VFBGA

3.6 V

2.2 V

3 V

Asynchronous

MoBL

3.0000 V

0.007873 oz

Industrial grade

-40 to 85 °C

Tray

MoBL®

e1

Yes

3A991.B.2.A

Asynchronous

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

Memory & Data Storage

SRAM - Asynchronous

2.2V ~ 3.6V

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.2 V

16Mbit

1

ASYNCHRONOUS

30 mA

55 ns

SRAM

Parallel

1 M x 16

3-STATE

1 mm

16

55ns

20 Bit

SRAM

16 Mb

0.00001 A

16777216 bit

Industrial

PARALLEL

COMMON

STANDARD SRAM

1.5 V

SRAM

1M x 16

9.5 mm

8 mm

-

-

Min: 1

Mult: 1

SMD

YES

8

104 MHz

INTEGRATED SILICON SOLUTION INC

Integrated Silicon Solution Inc

IS25LQ080-JBLE

1

8388608 words

8000000

105 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP, SOP8,.3

SOP8,.3

SQUARE

SMALL OUTLINE

Obsolete

5.82

Yes

Yes

LTC26xx

NOR TYPE

Flash Memories

CMOS

DUAL

GULL WING

1

1.27 mm

compliant

S-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.3 V

-

SYNCHRONOUS

0.02 mA

8MX1

2.16 mm

1

14bit

0.00003 A

8388608 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

5.28 mm

5.28 mm

-

-

Min: 1

Mult: 1

1 Week

Surface Mount

44-TSOP (0.400, 10.16mm Width)

YES

44-TSOP II

44

45 ns

CY621472

IP67

CYPRESS SEMICONDUCTOR CORP

Cypress Semiconductor

CY621472EV30LL-45ZSXI

Plastic

Volatile

Infineon Technologies

262144 words

256000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

TSOP2

TSOP2, TSOP44,.46,32

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Obsolete

TSOP2

Obsolete

5.81

Yes

3 V

Cable with connector

-40°C ~ 85°C (TA)

MoBL®

3A991.B.2.A

8542.32.00.41

SRAMs

SRAM - Asynchronous

2.2V ~ 3.6V

DUAL

GULL WING

1

0.8 mm

unknown

44

R-PDSO-G44

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.2 V

4Mbit

ASYNCHRONOUS

0.02 mA

45 ns

SRAM

Parallel

256KX16

3-STATE

1.194 mm

16

45ns

0.000007 A

4194304 bit

PARALLEL

COMMON

STANDARD SRAM

1.5 V

256K x 16

18.415 mm

10.16 mm

-

-

Min: 1

Mult: 1

YES

Steel

8

50 MHz

AM2 Cabinets, IS2 Enclosures For Automation

STMICROELECTRONICS

STMicroelectronics

M25P10-AVMN3TP/X

1

131072 words

128000

125 °C

-40 °C

PLASTIC/EPOXY

SOP

0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

SOP8,.25

RECTANGULAR

SMALL OUTLINE

Transferred

SOIC

40

5.64

Yes

3 V

e4

Yes

EAR99

Panel

NICKEL PALLADIUM GOLD

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

260

1

1.27 mm

compliant

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

AUTOMOTIVE

2.3 V

SYNCHRONOUS

0.015 mA

128KX8

1.75 mm

8

0.0001 A

1048576 bit

SERIAL

FLASH

2.7 V

SPI

10000 Write/Erase Cycles

HARDWARE/SOFTWARE

800mm

100mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGD-150I

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS832236AGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm