The category is 'Memory'
Memory (384)
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- Power Supplies:
2.5/3.3 V
Image | Part Number | Manufacturer | Datasheet | Availability | Pricing(USD) | Quantity | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Cell Type | Clock Frequency-Max (fCLK) | Data Rate Architecture | Dimensions | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Interface Type | Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Supply Voltage | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Supply Voltage | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Package Type | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Timing Type | Tradename | Typical Operating Supply Voltage | Usage Level | Operating Temperature | Packaging | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Technology | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Architecture | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Sync/Async | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Product Category | Temperature | Memory Organization | Height | Length | Width | Radiation Hardening |
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![]() | Mfr Part No GS816036BGT-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 5.5 ns | 250 MHz | GSI TECHNOLOGY | GSI Technology | GS816036BGT-250 | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.67 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.305 mA | 512KX36 | 3-STATE | 1.6 mm | 36 | 0.04 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25P40-VMW6G | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25P40-VMW6G | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | 30 | 5.45 | Yes | 2.7 V | Yes | EAR99 | NOR TYPE | 8542.32.00.51 | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 2.5 mm | 8 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 15 ms | 20 | HARDWARE/SOFTWARE | 5.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No M25PX16-VMN6TPBA | Micron | Datasheet | - | - | Min: 1 Mult: 1 | YES | 8 | 75 MHz | MICRON TECHNOLOGY INC | Micron Technology Inc | M25PX16-VMN6TPBA | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | 30 | 5.76 | Yes | 3 V | Yes | NOR TYPE | Flash Memories | CMOS | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | R-PDSO-G8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.015 mA | 2MX8 | 1.75 mm | 8 | 0.00001 A | 16777216 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z72C-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-209 | YES | 209 | 6.5 ns | GSI Technology | 250 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z72C-250I | 250 MHz | 153.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.18 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z72C | No | 3A991.B.2.B | NBT Pipeline/Flow Through | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 72 Mbit | 8 | SYNCHRONOUS | 340 mA, 480 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 72 | 3-STATE | 1.7 mm | 72 | 20 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832036GT-133 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 8.5 ns | 133 MHz | GSI TECHNOLOGY | GSI Technology | GS832036GT-133 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.7 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.16 mA | 1MX36 | 3-STATE | 1.6 mm | 36 | 0.06 A | 37748736 bit | PARALLEL | COMMON | CACHE SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No W25X20CLUXIG | Winbond | Datasheet | 263 | - | Min: 1 Mult: 1 | Surface Mount | Surface Mount | YES | 8 | 8 | NOR | 104 MHz | 3.1 x 2.1 x 0.55mm | WINBOND ELECTRONICS CORP | SPI | Winbond Electronics Corp | W25X20CLUXIG | 3.6 V | +85 °C | NOR | 2.3 V | -40 °C | 256K | 2000000 | 85 °C | -40 °C | USON - 8 | PLASTIC/EPOXY | HVSON | 2 X 3 MM, GREEN, PLASTIC, USON-8 | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE | USON | Active | SON | NOT SPECIFIED | 2.28 | Compliant | Yes | 3 V | W25X | EAR99 | NOR TYPE | 85 °C | -40 °C | IT ALSO OPERATES AT 2.3 V AT 80 MHZ | 8542.32.00.51 | Flash Memories | CMOS | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.5 mm | compliant | 80/104MHz | 8 | R-PDSO-N8 | Not Qualified | 3.6 V | 2.5/3.3 V | INDUSTRIAL | 2.7 V | 2.3 ~ 3.6V | SPI, Serial | 3.6 V | 2.3 V | 2Mbit | 14 mA | SYNCHRONOUS | 0.015 mA | 8 ns | 2MX1 | 0.6 mm | 1 | 24 b | 2 Mb | 0.000005 A | 2097152 bit | SERIAL | Synchronous | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | -40~+85˚C | 0.55mm | 2.1mm | 3.1mm | No | |||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z36CGB-166 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 7 ns | GSI Technology | 166 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z36CGB-166 | 166 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.35 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z36CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 135 mA, 160 mA | 7 ns | 128 k x 36 | 3-STATE | 1.99 mm | 36 | SRAM | 0.025 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z18CB-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 250 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CB-250 | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | 5.36 | No | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 145 mA, 180 mA | 5.5 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.025 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS832136AGD-250I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | Surface Mount | BGA-165 | YES | 165-FPBGA (15x13) | 165 | 5.5 ns | GS832136 | GSI Technology | 250 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS832136AGD-250I | 250 MHz | 181.8@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | GSI Technology Inc. | 2.3, 3 V | - 40 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | Tray | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | Active | NOT SPECIFIED | 5.16 | Details | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Industrial grade | -40 to 100 °C | Tray | GS832136AGD | 3A991.B.2.B | Pipeline/Flow Through | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | SRAM - Synchronous, Standard | 2.3V ~ 2.7V, 3V ~ 3.6V | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 250 MHz | 250 mA, 305 mA | 5.5 ns | SRAM | Parallel | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | - | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 1M x 36 | 15 mm | 13 mm | ||||||||||||||||||||||||||||
![]() | Mfr Part No GS864218B-250M | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 10 Weeks | YES | 119 | 6.5 ns | 250 MHz | SDR | GSI TECHNOLOGY | GSI Technology | GS864218B-250M | 153@Flow-Through/250@Pipelined MHz | 2.7, 3.6 V | 2.3, 3 V | Surface Mount | 18 Bit | 4 MWords | 4000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.43 | No | FBGA | 2.5 V | Synchronous | 2.5, 3.3 V | Military grade | -55 to 125 °C | e0 | No | 3A991.B.2.B | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | MILITARY | 2.3 V | 2 | SYNCHRONOUS | 0.355 mA | Flow-Through/Pipelined | 4MX18 | 3-STATE | 1.99 mm | 18 | 22 Bit | 72 Mbit | 0.14 A | 75497472 bit | Military | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS880F32CGT-6.5 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | 153 MHz | 72 | GSI TECHNOLOGY | Parallel | GSI Technology | GS880F32CGT-6.5 | + 70 C | SDR | 0 C | Yes | 3 | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.37 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | SyncBurst | Tray | GS880F32CGT | e3 | Yes | 3A991.B.2.B | Flow Through | PURE MATTE TIN | FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 9 Mbit | SYNCHRONOUS | 140 mA | 6.5 ns | 256 k x 32 | 3-STATE | 1.6 mm | 32 | SRAM | 0.025 A | 8388608 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z18CGB-166I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 7 ns | GSI Technology | 166 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CGB-166I | 166 MHz | + 85 C | SDR | - 40 C | Yes | SMD/SMT | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.36 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 145 mA, 160 mA | 7 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.045 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS88037CGT-300 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 2.2 ns | GSI Technology | 300 MHz | SDR | 36 | GSI TECHNOLOGY | Parallel | GSI Technology | GS88037CGT-300 | 300 MHz | 300 MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 36 Bit | 256 kWords | 256000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 5.61 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | SyncBurst | 2.5, 3.3 V | Commercial grade | 0 to 70 °C | Tray | GS88037CGT | e3 | Yes | 3A991.B.2.B | Pipeline | PURE MATTE TIN | PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 9 Mbit | 1 | SYNCHRONOUS | 225 mA | Pipelined | 256 k x 36 | 3-STATE | 1.6 mm | 36 | 18 Bit | SRAM | 9 Mbit | 0.025 A | 9437184 bit | Commercial | PARALLEL | COMMON | CACHE SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z18CGB-250 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 5.5 ns | GSI Technology | 250 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CGB-250 | 250 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.36 | Compliant | Yes | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Bulk | GS842Z18CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | 85 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | 2 | SYNCHRONOUS | 145 mA, 180 mA | 5.5 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | 18 b | SRAM | 4 Mb | 0.025 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS842Z18CGB-100 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 7 Weeks | BGA-119 | YES | 119 | 12 ns | GSI Technology | 100 MHz | 84 | GSI TECHNOLOGY | Parallel | GSI Technology | GS842Z18CGB-100 | 100 MHz | + 70 C | SDR | 0 C | Yes | SMD/SMT | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.36 | Details | Yes | 3.6 V | 2.3 V | 2.5 V | NBT SRAM | Tray | GS842Z18CGB | 3A991.B.2.B | NBT Pipeline/Flow Through | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 4 Mbit | SYNCHRONOUS | 110 mA, 110 mA | 12 ns | 256 k x 18 | 3-STATE | 1.99 mm | 18 | SRAM | 0.025 A | 4718592 bit | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8320Z36AGT-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | TQFP-100 | YES | 100 | 6.5 ns | GSI Technology | 200 MHz | SDR | 18 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8320Z36AGT-200 | 200 MHz | 153.8@Flow-Through/200@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | Surface Mount | SMD/SMT | 36 Bit | 1 MWords | 1000000 | 85 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | NOT SPECIFIED | 1.71 | Details | Yes | TQFP | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Tray | GS8320Z36AGT | 3A991.B.2.B | NBT Pipeline/Flow Through | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | QUAD | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 205 mA, 240 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.6 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816018BGT-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6.5 ns | 200 MHz | GSI TECHNOLOGY | GSI Technology | GS816018BGT-200 | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.28 | Compliant | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 2 | SYNCHRONOUS | 0.23 mA | 1MX18 | 3-STATE | 1.6 mm | 18 | 20 b | 18 Mb | 0.04 A | 18874368 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8642Z72C-167I | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-209 | YES | 209 | 8 ns | GSI Technology | 167 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8642Z72C-167I | 167 MHz | 125@Flow-Through/167@Pipelined MHz | 2.7, 3.6 V | + 85 C | SDR | 2.3, 3 V | - 40 C | Yes | 3 | Surface Mount | SMD/SMT | 72 Bit | 1 MWords | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA209,11X19,40 | BGA209,11X19,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | BGA | NOT SPECIFIED | 5.18 | Compliant | No | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Industrial grade | -40 to 85 °C | Tray | GS8642Z72C | No | 3A991.B.2.B | NBT Pipeline/Flow Through | 85 °C | -40 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | compliant | 209 | R-PBGA-B209 | Not Qualified | 2.7 V | 2.5/3.3 V | INDUSTRIAL | 2.3 V | 72 Mbit | 8 | SYNCHRONOUS | 280 mA, 360 mA | 8 ns | Flow-Through/Pipelined | 1 M x 72 | 3-STATE | 1.7 mm | 72 | 20 Bit | SRAM | 72 Mbit | 0.12 A | 75497472 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | |||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS8322Z18AGB-150 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | 8 Weeks | BGA-119 | YES | 119 | 7.5 ns | GSI Technology | 150 MHz | SDR | 14 | GSI TECHNOLOGY | Parallel | GSI Technology | GS8322Z18AGB-150 | 150 MHz | 133.3@Flow-Through/150@Pipelined MHz | 2.7, 3.6 V | + 70 C | SDR | 2.3, 3 V | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 18 Bit | 2 MWords | 2000000 | 70 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | NOT SPECIFIED | 5.13 | Compliant | Yes | FBGA | 3.6 V | 2.3 V | 2.5 V | Synchronous | NBT SRAM | 2.5, 3.3 V | Commercial grade | 0 to 85 °C | Bulk | GS8322Z18AGB | e1 | Yes | 3A991.B.2.B | NBT Pipeline/Flow Through | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | 0 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 119 | R-PBGA-B119 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | 36 Mbit | 2 | SYNCHRONOUS | 175 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | ZBT SRAM | 2.3 V | SRAM | 22 mm | 14 mm | No | ||||||||||||||||||||||||||||||||||
![]() | Mfr Part No GS816032BGT-200 | GSI Technology | Datasheet | - | - | Min: 1 Mult: 1 | YES | 100 | 6.5 ns | 200 MHz | GSI TECHNOLOGY | GSI Technology | GS816032BGT-200 | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | NOT SPECIFIED | 5.67 | Yes | 2.5 V | e3 | Yes | 3A991.B.2.B | PURE MATTE TIN | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | Not Qualified | 2.7 V | 2.5/3.3 V | COMMERCIAL | 2.3 V | SYNCHRONOUS | 0.255 mA | 512KX32 | 3-STATE | 1.6 mm | 32 | 16777216 bit | PARALLEL | COMMON | CACHE SRAM | 2.3 V | 20 mm | 14 mm |
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