Memory (384)

-

-

Min: 1

Mult: 1

8 Weeks

Surface Mount

BGA-119

YES

119-FPBGA (22x14)

119

6.5 ns

GS8642Z

GSI Technology

250 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8642Z36GB-250I

200 MHz

153.8@Flow-Through/250@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

GSI Technology Inc.

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

Tray

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

Active

NOT SPECIFIED

4.64

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

3.451645 oz

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

2M x 36

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-119

YES

119

4.2 ns

GSI Technology

375 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z18AB-375M

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 125 C

SDR

2.3, 3 V

- 55 C

Yes

Surface Mount

SMD/SMT

18 Bit

2 MWords

2000000

125 °C

-55 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

5.55

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Military grade

-55 to 125 °C

Tray

GS8322Z18AB

3A991.B.2.B

NBT Pipeline/Flow Through

ALSO OPERATES AT 3.3 V SUPPLY; PIPELINE MODE

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

MILITARY

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 360 mA

4.2 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.09 A

37748736 bit

Military

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

-

-

Min: 1

Mult: 1

YES

8

50 MHz

MICRON TECHNOLOGY INC

Micron Technology Inc

M25P40-VMS6TGB

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

VSOP

VSOP, SOLCC8,.25

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

Obsolete

QFN

NOT SPECIFIED

5.59

Yes

2.7 V

3A991.B.1.B.1

NOR TYPE

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

1.27 mm

unknown

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.015 mA

512KX8

1 mm

8

0.00001 A

4194304 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

6 mm

5 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

225 MHz

SDR

15

GSI TECHNOLOGY

Parallel

GSI Technology

GS8644Z36E-225I

225 MHz

153.8@Flow-Through/225@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

2 MWords

2000000

85 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.15

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS8644Z36E

No

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

17 mm

15 mm

-

-

Min: 1

Mult: 1

YES

8

50 MHz

NUMONYX

Numonyx Memory Solutions

M25P40-VMS6GB

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

VSOP

VSOP, SOLCC8,.25

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

Transferred

QFN

NOT SPECIFIED

5.59

Yes

2.7 V

3A991.B.1.B.1

NOR TYPE

8542.32.00.51

Flash Memories

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

1.27 mm

unknown

8

R-PDSO-G8

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.3 V

SYNCHRONOUS

0.015 mA

512KX8

1 mm

8

0.00001 A

4194304 bit

SERIAL

FLASH

2.7 V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

6 mm

5 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.5 ns

375 MHz

SDR

GSI TECHNOLOGY

Parallel

GSI Technology

GS832132AGD-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

Surface Mount

SMD/SMT

32 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.16

Compliant

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

4.2 ns

GSI Technology

375 MHz

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832218AD-375I

375 MHz

238@Flow-Through/375@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

SMD/SMT

18 Bit

2097152 words

2000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.11

Compliant

No

FBGA

3.6 V

2.3 V

2.5 V

SyncBurst

2.5, 3.3 V

-40 to 100 °C

Bulk

GS832218AD

e0

No

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2@Flow-Through/2.5

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mb

0.04 A

36

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z36AGD-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

1.41

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Industrial grade

-40 to 100 °C

Tray

GS8322Z36AGD

e1

Yes

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

YES

165

8 ns

166 MHz

GSI TECHNOLOGY

GSI Technology

GS8321Z36GE-166

3

1048576 words

1000000

70 °C

PLASTIC/EPOXY

LBGA

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Obsolete

BGA

NOT SPECIFIED

8.43

Yes

2.5 V

e1

Yes

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

SYNCHRONOUS

0.225 mA

1MX36

3-STATE

1.5 mm

36

0.06 A

37748736 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

17 mm

15 mm

-

-

Min: 1

Mult: 1

YES

44

8 ns

INTEGRATED SILICON SOLUTION INC

Integrated Silicon Solution Inc

IS61WV6416DBLL-8TLI

65536 words

64000

85 °C

-40 °C

PLASTIC/EPOXY

TSOP2

TSOP2, TSOP44,.46,32

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Active

TSOP2

5.58

Yes

3 V

3A991.B.2.B

8542.32.00.41

SRAMs

CMOS

DUAL

GULL WING

1

0.8 mm

compliant

44

R-PDSO-G44

Not Qualified

3.6 V

2.5/3.3 V

INDUSTRIAL

2.4 V

ASYNCHRONOUS

0.07 mA

64KX16

3-STATE

1.2 mm

16

0.000055 A

1048576 bit

PARALLEL

COMMON

STANDARD SRAM

2 V

18.41 mm

10.16 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

200 MHz

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-200

200 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

1.7

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0.417150 oz

Commercial grade

0 to 70 °C

Tray

GS88018CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

130 mA, 155 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

7 Weeks

BGA-119

YES

119

6.5 ns

GSI Technology

200 MHz

84

GSI TECHNOLOGY

Parallel

GSI Technology

GS842Z36CGB-200

200 MHz

+ 70 C

SDR

0 C

Yes

SMD/SMT

131072 words

128000

70 °C

PLASTIC/EPOXY

BGA

BGA, BGA119,7X17,50

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

Active

BGA

NOT SPECIFIED

5.35

Details

Yes

3.6 V

2.3 V

2.5 V

NBT SRAM

Tray

GS842Z36CGB

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1.27 mm

compliant

119

R-PBGA-B119

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

4 Mbit

4

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

128 k x 36

3-STATE

1.99 mm

36

17 b

SRAM

4 Mb

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-209

YES

209

4.4 ns

GSI Technology

225 MHz

SDR

14

GSI TECHNOLOGY

Parallel

GSI Technology

GS8322Z72C-225M

225 MHz

143@Flow-Through/225@Pipelined MHz

2.7, 3.6 V

+ 125 C

SDR

2.3, 3 V

- 55 C

Yes

Surface Mount

SMD/SMT

72 Bit

512 kWords

512000

125 °C

-55 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA209,11X19,40

BGA209,11X19,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

5.16

N

No

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

NBT SRAM

2.5, 3.3 V

Military grade

-55 to 125 °C

Tray

GS8322Z72C

3A991.B.2.B

NBT Pipeline/Flow Through

125 °C

-55 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

209

R-PBGA-B209

Not Qualified

2.7 V

2.5/3.3 V

MILITARY

2.3 V

36 Mbit

8

SYNCHRONOUS

300 mA, 390 mA

7 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

19 Bit

SRAM

36 Mbit

0.2 A

37748736 bit

Military

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

6.5 ns

GSI Technology

200 MHz

SDR

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832136AGD-200

200 MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

Surface Mount

SMD/SMT

36 Bit

1 MWords

1000000

85 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.14

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 85 °C

Tray

GS832136AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

NOT SPECIFIED

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

200 MHz

GSI TECHNOLOGY

Parallel

GSI Technology

GS88018CGT-200I

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 85 C

2.3, 3 V

- 40 C

3

SMD/SMT

18 Bit

524288 words

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

4.83

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

2.5, 3.3 V

-40 to 85 °C

e3

Yes

3A991.B.2.B

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

150 mA, 175 mA

6.5@Flow-Through/3@P

512 k x 18

3-STATE

1.6 mm

18

19 Bit

0.045 A

9

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

BGA-165

YES

165

7.5 ns

GSI Technology

150 MHz

18

GSI TECHNOLOGY

Parallel

GSI Technology

GS832236AGD-150

150 MHz

133@Flow-Through/150@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

SMD/SMT

36 Bit

1048576 words

1000000

70 °C

PLASTIC/EPOXY

LBGA

LBGA, BGA165,11X15,40

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

Active

BGA

NOT SPECIFIED

5.12

Details

Yes

FBGA

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

0 to 85 °C

Tray

GS832236AGD

e1

Yes

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

SYNCHRONOUS

190 mA, 200 mA

7.5@Flow-Through/3.8

1 M x 36

3-STATE

1.4 mm

36

SRAM

0.03 A

36

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

15 mm

13 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

133 MHz

SDR

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880F18CGT-7.5I

133.3 MHz

2.7, 3.6 V

+ 85 C

SDR

2.3, 3 V

- 40 C

Yes

3

Surface Mount

SMD/SMT

18 Bit

512 kWords

512000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.36

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

Synchronous

SyncBurst

2.5, 3.3 V

Industrial grade

-40 to 85 °C

Tray

GS880F18CGT

e3

Yes

3A991.B.2.B

Flow Through

PURE MATTE TIN

85 °C

-40 °C

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

2

SYNCHRONOUS

140 mA

7.5 ns

Flow-Through

512 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

No

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

7.5 ns

GSI Technology

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS880E36CGT-150I

150 MHz

+ 85 C

SDR

- 40 C

Yes

3

SMD/SMT

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.61

Details

Yes

3.6 V

2.3 V

2.5 V

SyncBurst

Tray

GS880E36CGT

e3

Yes

3A991.B.2.B

DCD

PURE MATTE TIN

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.045 A

9437184 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI TECHNOLOGY

Parallel

GSI Technology

GS88032CGT-200I

200 MHz

+ 85 C

- 40 C

3

SMD/SMT

262144 words

256000

85 °C

-40 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.61

Yes

3.6 V

2.3 V

2.5 V

GS88032CGT

e3

Yes

3A991.B.2.B

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

INDUSTRIAL

2.3 V

9 Mbit

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

256 k x 32

3-STATE

1.6 mm

32

0.045 A

8388608 bit

PARALLEL

COMMON

CACHE SRAM

2.3 V

20 mm

14 mm

-

-

Min: 1

Mult: 1

8 Weeks

TQFP-100

YES

100

6.5 ns

GSI Technology

72

GSI TECHNOLOGY

Parallel

GSI Technology

GS88032CGT-200

200 MHz

153.8@Flow-Through/200@Pipelined MHz

2.7, 3.6 V

+ 70 C

SDR

2.3, 3 V

0 C

Yes

3

SMD/SMT

32 Bit

262144 words

256000

70 °C

PLASTIC/EPOXY

LQFP

LQFP, QFP100,.63X.87

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

Active

QFP

NOT SPECIFIED

5.61

Details

Yes

TQFP

3.6 V

2.3 V

2.5 V

SyncBurst

2.5, 3.3 V

Commercial grade

0 to 70 °C

Tray

GS88032CGT

e3

Yes

3A991.B.2.B

Pipeline/Flow Through

PURE MATTE TIN

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

GULL WING

260

1

0.65 mm

compliant

100

R-PQFP-G100

Not Qualified

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5@Flow-Through/3@P

256 k x 32

3-STATE

1.6 mm

32

SRAM

0.025 A

9

Commercial

PARALLEL

COMMON

CACHE SRAM

2.3 V

SRAM

20 mm

14 mm